Integrated CMOS Energy Harvesting Converter with Digital Maximum Power Point Tracking for a Portable Thermophotovoltaic Power Generator

This paper presents an integrated maximum power point tracking system for use with a thermophotovoltaic (TPV) portable power generator. The design, implemented in 0.35 μm CMOS technology, consists of a low-power control stage and a dc-dc boost power stage with soft-switching capability. With a nominal input voltage of 1 V, and an output voltage of 4 V, we demonstrate a peak conversion efficiency under nominal conditions of over 94% (overall peak efficiency over 95%), at a power level of 300 mW. The control stage uses lossless current sensing together with a custom low-power time-based ADC to minimize control losses. The converter employs a fully integrated digital implementation of a peak power tracking algorithm, and achieves a measured tracking efficiency above 98%. A detailed study of achievable efficiency versus inductor size is also presented, with calculated and measured results.Interconnect Focus Center (United States. Defense Advanced Research Projects Agency and Semiconductor Research Corporation

A handheld high-sensitivity micro-NMR CMOS platform with B-field stabilization for multi-type biological/chemical assays

We report a micro-nuclear magnetic resonance (NMR) system compatible with multi-type biological/chemical lab-on-a-chip assays. Unified in a handheld scale (dimension: 14 x 6 x 11 cm³, weight: 1.4 kg), the system is capable to detect<100 pM of Enterococcus faecalis derived DNA from a 2.5 μL sample. The key components are a portable magnet (0.46 T, 1.25 kg) for nucleus magnetization, a system PCB for I/O interface, an FPGA for system control, a current driver for trimming the magnetic (B) field, and a silicon chip fabricated in 0.18 μm CMOS. The latter, integrated with a current-mode vertical Hall sensor and a low-noise readout circuit, facilitates closed-loop B-field stabilization (2 mT → 0.15 mT), which otherwise fluctuates with temperature or sample displacement. Together with a dynamic-B-field transceiver with a planar coil for micro-NMR assay and thermal control, the system demonstrates: 1) selective biological target pinpointing; 2) protein state analysis; and 3) solvent-polymer dynamics, suitable for healthcare, food and colloidal applications, respectively. Compared to a commercial NMR-assay product (Bruker mq-20), this platform greatly reduces the sample consumption (120x), hardware volume (175x), and weight (96x)

縦型ボディチャネルMOS Field-Effect Transistorを用いたマイクロプロセッサ向け高効率・高集積DC-DCコンバータとそのパワーマネジメントに関する研究

Tohoku University遠藤哲郎課

ISM-Band Energy Harvesting Wireless Sensor Node

In recent years, the interest in remote wireless sensor networks has grown significantly, particularly with the rapid advancements in Internet of Things (IoT) technology. These networks find diverse applications, from inventory tracking to environmental monitoring. In remote areas where grid access is unavailable, wireless sensors are commonly powered by batteries, which imposes a constraint on their lifespan. However, with the emergence of wireless energy harvesting technologies, there is a transformative potential in addressing the power challenges faced by these sensors. By harnessing energy from the surrounding environment, such as solar, thermal, vibrational, or RF sources, these sensors can potentially operate autonomously for extended periods. This innovation not only enhances the sustainability of wireless sensor networks but also paves the way for a more energy-efficient and environmentally conscious approach to data collection and monitoring in various applications. This work explores the development of an RF-powered wireless sensor node in 22nm FDSOI technology working in the ISM band for energy harvesting and wireless data transmission. The sensor node encompasses power-efficient circuits, including an RF energy harvesting module equipped with a multi-stage RF Dickson rectifier, a robust power management unit, a DLL and XOR-based frequency synthesizer for RF carrier generation, and a class E power amplifier. To ensure the reliability of the WSN, a dedicated wireless RF source powers up the WSN. Additionally, the RF signal from this dedicated source serves as the reference frequency input signal for synthesizing the RF carrier for wireless data transmission, eliminating the need for an on-chip local oscillator. This approach achieves high integration and proves to be a cost-effective implementation of efficient wireless sensor nodes. The receiver and energy harvester operate at 915 MHz Frequency, while the transmitter functions at 2.45 GHz, employing On-Off Keying (OOK) for data modulation. The WSN utilizes an efficient RF rectifier design featuring a remarkable power conversion efficiency, reaching 55% at an input power of -14 dBm. Thus, the sensor node can operate effectively even with an extremely low RF input power of -25 dBm. The work demonstrates the integration of the wireless sensor node with an ultra-low-power temperature sensor, designed using 65 nm CMOS technology. This temperature sensor features an ultra-low power consumption of 60 nW and a Figure of Merit (FOM) of 0.022 [nJ.K-2]. The WSN demonstrated 55% power efficiency at a TX output power of -3.8 dBm utilizing a class E power amplifier

Design and implementation of a multi-modal sensor with on-chip security

With the advancement of technology, wearable devices for fitness tracking, patient monitoring, diagnosis, and disease prevention are finding ways to be woven into modern world reality. CMOS sensors are known to be compact, with low power consumption, making them an inseparable part of wireless medical applications and Internet of Things (IoT). Digital/semi-digital output, by the translation of transmitting data into the frequency domain, takes advantages of both the analog and digital world. However, one of the most critical measures of communication, security, is ignored and not considered for fabrication of an integrated chip. With the advancement of Moore\u27s law and the possibility of having a higher number of transistors and more complex circuits, the feasibility of having on-chip security measures is drawing more attention. One of the fundamental means of secure communication is real-time encryption. Encryption/ciphering occurs when we encode a signal or data, and prevents unauthorized parties from reading or understanding this information. Encryption is the process of transmitting sensitive data securely and with privacy. This measure of security is essential since in biomedical devices, the attacker/hacker can endanger users of IoT or wearable sensors (e.g. attacks at implanted biosensors can cause fatal harm to the user). This work develops 1) A low power and compact multi-modal sensor that can measure temperature and impedance with a quasi-digital output and 2) a low power on-chip signal cipher for real-time data transfer

A Low-Power Interface for Capacitive Sensors With PWM Output and Intrinsic Low Pass Characteristic

A compact, low power interface for capacitive sensors, is described. The output signal is a pulse width modulated (PWM) signal, where the pulse duration is linearly proportional to the sensor differential capacitance. The original conversion approach consists in stimulating the sensor capacitor with a triangular-like voltage waveform in order to obtain a square-like current waveform, which is subsequently demodulated and integrated over a clock period. The charge obtained in this way is then converted into the output pulse duration by an approach that includes an intrinsic tunable low pass function. The main non idealities are thoroughly investigated in order to provide useful design indications and evaluate the actual potentialities of the proposed circuit. The theoretical predictions are compared with experimental results obtained with a prototype, designed and fabricated using 0.32 mu M CMOS devices from the BCD6s process of STMicroelectroncs. The prototype occupies a total area of 1025 x 515 mm(2) and is marked by a power consuption of 84 mu W. The input capacitance range is 0-256 fF, with a resolution of 0.8 fF and a temperature sensitivity of 300 ppm/degrees C