8,101 research outputs found

    High Efficiency Cross-Coupled Charge Pump Circuit with Four-Clock Signals

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    © Allerton Press, Inc. 2018A fully integrated cross-coupled charge pump circuit for boosting dc-to-dc converter applications with four-clock signals has been proposed. With the new clock scheme, this charge pump eliminates all of the reversion power loss and reduces the ripple voltage. In addition, the largest voltage differences between the terminals of all transistors do not exceed the power supply voltage for solving the gate-oxide overstress problem in the conventional charge pump circuits and enhancing the reliability. This proposed charge pump circuit does not require any extra level shifter; therefore, the power efficiency is increased. The proposed charge pump circuit has been simulated using Spectre in the TSMC 0.18 μm CMOS process. The simulation results show that the maximum voltage conversion efficiency of the new 3-stage cross-coupled circuit with an input voltage of 1.5Vis 99.8%. According to the comparison results of the conventional pump and the enhanced charge pump proposed, the output ripple voltage has been significantly reduced.Peer reviewe

    Embedded 5V-to-3.3V Voltage Regulator for Supplying Digital ICs in 3.3V CMOS Technology

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    A fully integrated 5 V-to-3.3 V supply voltage regulator for application in digital IC's has been designed in a 3.3 V 0.5 μm CMOS process. The regulator is able to deliver peak current transients of 300 mA, while the output voltage remains within a margin of 10% around the nominal value. The circuit draw's a static quiescent current of 750 μA during normal operation, and includes a power-down mode with only 10 μA current consumption. The die area is 1 mm2, and can be scaled proportional to the maximum peak current. Special precautions have been taken to allow 5 V in the 3.3 V process

    Ultra-Low-Voltage IC Design Methods

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    The emerging nanoscale technologies inherently offer transistors working with low voltage levels and are optimized for low-power operation. However, these technologies lack quality electronic components vital for reliable analog and/or mixed-signal design (e.g., resistor, capacitor, etc.) as they are predominantly used in high-performance digital designs. Moreover, the voltage headroom, ESD properties, the maximum current densities, parasitic effects, process fluctuations, aging effects, and many other parameters are superior in verified-by-time CMOS processes using planar transistors. This is the main reason, why low-voltage, low-power high-performance analog and mixed-signal circuits are still being designed in mature process nodes. In the proposed chapter, we bring an overview of main challenges and design techniques effectively applicable for ultra-low-voltage and low-power analog integrated circuits in nanoscale technologies. New design challenges and limitations linked with a low value of the supply voltage, the process fluctuation, device mismatch, and other effects are discussed. In the later part of the chapter, conventional and unconventional design techniques (bulk-driven approach, floating-gate, dynamic threshold, etc.) to design analog integrated circuits towards ultra-low-voltage systems and applications are described. Examples of ultra-low-voltage analog ICs blocks (an operational amplifier, a voltage comparator, a charge pump, etc.) designed in a standard CMOS technology using the unconventional design approach are presented

    A Charge-Recycling Scheme and Ultra Low Voltage Self-Startup Charge Pump for Highly Energy Efficient Mixed Signal Systems-On-A-Chip

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    The advent of battery operated sensor-based electronic systems has provided a pressing need to design energy-efficient, ultra-low power integrated circuits as a means to improve the battery lifetime. This dissertation describes a scheme to lower the power requirement of a digital circuit through the use of charge-recycling and dynamic supply-voltage scaling techniques. The novel charge-recycling scheme proposed in this research demonstrates the feasibility of operating digital circuits using the charge scavenged from the leakage and dynamic load currents inherent to digital design. The proposed scheme efficiently gathers the “ground-bound” charge into storage capacitor banks. This reclaimed charge is then subsequently recycled to power the source digital circuit. The charge-recycling methodology has been implemented on a 12-bit Gray-code counter operating at frequencies of less than 50 MHz. The circuit has been designed in a 90-nm process and measurement results reveal more than 41% reduction in the average energy consumption of the counter. The total energy savings including the power consumed for the generation of control signals aggregates to an average of 23%. The proposed methodology can be applied to an existing digital path without any design change to the circuit but with only small loss to the performance. Potential applications of this scheme are described, specifically in wide-temperature dynamic power reduction and as a source for energy harvesters. The second part of this dissertation deals with the design and development of a self-starting, ultra-low voltage, switched-capacitor (SC) DC-DC converter that is essential to an energy harvesting system. The proposed charge-pump based SC-converter operates from 125-mV input and thus enables battery-less operation in ultra-low voltage energy harvesters. The charge pump does not require any external components or expensive post-fabrication processing to enable low-voltage operation. This design has been implemented in a 130-nm CMOS process. While the proposed charge pump provides significant efficiency enhancement in energy harvesters, it can also be incorporated within charge recycling systems to facilitate adaptable charge-recycling levels. In total, this dissertation provides key components needed for highly energy-efficient mixed signal systems-on-a-chip

    A High Efficiency and Low Ripple Cross-Coupled Charge Pump Circuit

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    A fully integrated cross-coupled charge pump circuit with four-clock signals and a new method of body bias have been proposed. The new clock scheme eliminates all of the reversion power loss and reduces the ripple voltage. In addition, the largest voltage differences between the terminals of all transistors do not exceed the supply voltage. We have also solved the gate-oxide overstress problem in the conventional charge pump circuits and enhanced the reliability. The proposed charge pump circuit has been simulated using Spectre and in the TSMC 0.18um CMOS process. The simulation results show that the maximum voltage conversion efficiency of the new 3-stage cross-coupled circuit with an input voltage of 1.5V is 99.8%. Moreover, the output ripple voltage has been significantly reduced.Peer reviewe

    A fully integrated multiband frequency synthesizer for WLAN and WiMAX applications

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    This paper presents a fractional N frequency synthesizer which covers WLAN and WiMAX frequencies on a single chip. The synthesizer is fully integrated in 0.35μm BiCMOS AMS technology except crystal oscillator. The synthesizer operates at four frequency bands (3.101-3.352GHz, 3.379-3.727GHz, 3.7-4.2GHz, 4.5-5.321GHz) to provide the specifications of 802.16 and 802.11 a/b/g/y. A single on-chip LC - Gm based VCO is implemented as the core of this synthesizer. Different frequency bands are selected via capacitance switching and fine tuning is done using varactor for each of these bands. A bandgap reference circuit is implemented inside of this charge pump block to generate temperature and power supply independent reference currents. Simulated settling time is around 10μsec. Total power consumption is measured to be 118.6mW without pad driving output buffers from a 3.3V supply. The phase noise of the oscillator is lower than -116.4dbc/Hz for all bands. The circuit occupies 2.784 mm2 on Si substrate, including DC, Digital and RF pads

    A robust high-efficiency cross-coupled charge pump circuit without blocking transistors

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    This document is the Accepted Manuscript version of the following article: Minglin Ma, Xinglong Cai, Yichuang Sun, and Nike George, ‘A robust high-efficiency cross-coupled charge pump circuit without blocking transistors’, Analog Integrated Circuits and Signal Processing, Vol. 95 (3): 395-401, June 2018. Under embargo until 16 March 2019. The final publication is available at Springer via: https://doi.org/10.1007/s10470-018-1149-xA fully integrated cross-coupled charge pump circuit with a new clock scheme has been presented in this paper. The new clock scheme ensures that all NMOS pre-charge transistors are turned off when the voltages of main clock signals are high. Notably, all PMOS transfer transistors will be turned off when the voltages of the main clock signals are low. As a result, the charge pump eliminates all of the reversion power loss and reduces the ripple voltage. The proposed charge pump has a better performance even in scenarios where the main clock signals are mismatched. The proposed charge pump circuit was simulated using spectre in the TSMC 0.18 µm CMOS process. The simulation results show that the proposed charge pump circuit has a high voltage conversion efficiency and low ripple voltage.Peer reviewe

    A high-efficiency and compact charge pump with charge recycling scheme and finger boost capacitor

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    A 16-phase 8-branch charge pump with finger boost capacitor is proposed to increase the power efficiency. Compared with the standard capacitor, the finger capacitor can significantly reduce the parasitic capacitance. The proposed four-stage charge pump with finger capacitor can achieve 14.2 V output voltage from a 3 V power supply. The finger capacitor can increase the power efficiency of the charge pump to 60.5% and save chip area as well
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