Design of CMOS Digital Silicon Photomultipliers with ToF for Positron Emission Tomography

This thesis presents a contribution to the design of single-photon detectors for medical imaging. Specifically, the focus has been on the development of a pixel capable of single-photon counting in CMOS technology, and the associated sensor thereof. These sensors can work under low light conditions and provide timing information to determine the time-stamp of the incoming photons. For instance, this is particularly attractive for applications that rely either on time-of-flight measurements or on exponential decay determination of the light source, like positron emission tomography or fluorescence-lifetime imaging, respectively. This thesis proposes the study of the pixel architecture to optimize its performance in terms of sensitivity, linearity and signal to noise ratio. The design of the pixel has followed a bottom-up approach, taking care of the smallest building block and studying how the different architecture choices affect performance. Among the various building blocks needed, special emphasis has been placed on the following: • the Single-Photon Avalanche Diode (SPAD), a photodiode able to detect photons one by one; • the front-end circuitry of this diode, commonly called quenching and recharge circuit; • the Time-to-Digital Converter (TDC), which determines the timing performance of the pixel. The proposed architectural exploration provides a comprehensive insight into the design space of the pixel, allowing to determine the optimum design points in terms of sensor sensitivity, linearity or signal to noise ratio, thus helping designers to navigate through non-straightforward trade-offs. The proposed TDC is based on a voltage-controlled ring oscillator, since this architecture provides moderate time resolutions while keeping the footprint, the power, and conversion time relatively small. Two pseudo-differential delay stages have been studied, one with cross-coupled PMOS transistors and the other with cross-coupled inverters. Analytical studies and simulations have shown that cross-coupled inverters are the most appropriate to implement the TDC because they achieve better time resolution with smaller energy per conversion than cross-coupled PMOS transistor stages. A 1.3×1.3 mm2 pixel has been implemented in an 110 nm CMOS image sensor technology, to have the benefits of sub-micron technologies along with the cleanliness of CMOS image sensor technologies. The fabricated chips have been used to characterize the single-photon avalanche diodes. The results agree with expectations: a maximum photon detection probability of 46 % and a median dark count rate of 0.4 Hz/µm2 with an excess voltage of 3 V. Furthermore, the characterization of the TDC shows that the time resolution is below 100 ps, which agrees with post-layout simulations. The differential non-linearity is ±0.4LSB, and the integral non-linearity is ±6.1LSB. Photoemission occurs during characterization - an indication that the avalanches are not quenched properly. The cause of this has been identified to be in the design of the SPAD and the quenching circuit. SPADs are sensitive devices which maximum reverse current must be well defined and limited by the quenching circuit, otherwise unwanted effects like excessive cross-talk, noise, and power consumption may happen. Although this issue limits the operation of the implemented pixel, the information obtained during the characterization will help to avoid mistakes in future implementations

Ultra-Low-Temperature Silicon and Germanium-on-Silicon Avalanche Photodiodes:Modeling, Design, and Characterization

In this thesis we propose the use of photodiodes fabricated in planar technologies to address the detection problem in these applications. A number of solutions exist, optimized for these wavelengths, based on Germanium (Ge) and other III-V materials. In this thesis we focused on Ge thanks to its versatility and ease to use in the clean room. The main advantage of this material is in fact a good compatibility with Silicon and standard CMOS processes. Note that the proposed technology is not based on Silicon/Germanium (SiGe), whereby Ge is used to strain Si to achieve higher bandwidth in Si, not higher sensitivity. In our pure Ge approach, Ge is grafted onto Si (Ge-on-Si), achieving high responsivity at wavelengths of 900nm and higher. The proposed devices can operate in avalanche mode (avalanche photodiodes - APDs), and in Geiger mode (Geiger mode APDs (GAPDs) or single-photon avalanche diodes (SPADs)). To combine the advantages of Ge with single-photon sensitivity and excellent timing resolution of Si-based SPADs, this thesis proposes a new generation of SPADs, achieved in collaboration with Prof. Nanver at TUDelft, aimed at near-infrared range. The fabrication process of the Ge-on-Si SPAD approach, which we are investigating together with the TUDelft group, consists of a standard CMOS process combined with post-processing steps to grow Ge on top of a Si/SiO2 layer. In our study we have investigated the potential for a new generation of massively parallel, Ge-on-Si sensors fabricated in fully CMOS compatible technology. The objective was to address the next challenges of super-parallel pixel arrays, while exploiting the advantages of Ge substrate. The key technology developed in the thesis is a selective chemical-vapor deposition (CVD) epitaxial growth. A novel processing procedure was developed for the p+ Ge surface doping by a sequence of pure-Ga and pure-B depositions (PureGaB). The resulting p+n diodes have exceptionally good I-V characteristics with ideality factor of ~1.1 and low saturation currents. They can be operated both in proportional and in Geiger mode, and exhibit relatively low dark counts. We also looked at techniques to improve red and infrared sensitivity in conventional deep-submicron CMOS processes, by careful selection of standard layers at high depths in the Si substrate. Using the proposed approach, 12 µm-diameter SPADs were fabricated in 0.18µm CMOS technology showing low dark count rates (363 cps) at room temperature and considerably lower rates at cryogenic temperatures (77 K), while the FWHM timing jitter is as low as 76 ps. That of cryogenic SPADs is a novel research direction and in this thesis it was advocated as a significant trend for the future of optical sensing, especially in mid-infrared wavelengths. Low temperature characterizations reported in this thesis exposed how the relevant properties of fabrication materials, such as strength, thermal conductivity, ductility, and electrical resistance are changing. One of the most important properties is superconductivity in materials cooled to extreme temperatures: this is an important trend that will be pursued in the future activities of our group

Event-based processing of single photon avalanche diode sensors

Single Photon Avalanche Diode sensor arrays operating in direct time of flight mode can perform 3D imaging using pulsed lasers. Operating at high frame rates, SPAD imagers typically generate large volumes of noisy and largely redundant spatio-temporal data. This results in communication bottlenecks and unnecessary data processing. In this work, we propose a neuromorphic processing solution to this problem. By processing the spatio-temporal patterns generated by the SPADs in a local, event-based manner, the proposed 128 imes 128 pixel sensor-processor system reduces the size of output data from the sensor by orders of magnitude while increasing the utility of the output data in the context of challenging recognition tasks. To test the proposed system, the first large scale complex SPAD imaging dataset is captured using an existing 32 imes 32 pixel sensor. The generated dataset consists of 24000 recordings and involves high-speed view-invariant recognition of airplanes with background clutter. The frame-based SPAD imaging dataset is converted via several alternative methods into event-based data streams and processed using the proposed 125 imes 125 receptive field neuromorphic processor as well as a range of feature extractor networks and pooling methods. The output of the proposed event generation methods are then processed by an event-based feature extraction and classification system implemented in FPGA hardware. The event-based processing methods are compared to processing the original frame-based dataset via frame-based but otherwise identical architectures. The results show the event-based methods are superior to the frame-based approach both in terms of classification accuracy and output data-rate

CMOS Sensors for Time-Resolved Active Imaging

In the past decades, time-resolved imaging such as fluorescence lifetime or time-of-flight depth imaging has been extensively explored in biomedical and industrial fields because of its non-invasive characterization of material properties and remote sensing capability. Many studies have shown its potential and effectiveness in applications such as cancer detection and tissue diagnoses from fluorescence lifetime imaging, and gesture/motion sensing and geometry sensing from time-of-flight imaging. Nonetheless, time-resolved imaging has not been widely adopted due to the high cost of the system and performance limits. The research presented in this thesis focuses on the implementation of low-cost real-time time-resolved imaging systems. Two image sensing schemes are proposed and implemented to address the major limitations. First, we propose a single-shot fluorescence lifetime image sensors for high speed and high accuracy imaging. To achieve high accuracy, previous approaches repeat the measurement for multiple sampling, resulting in long measurement time. On the other hand, the proposed method achieves both high speed and accuracy at the same time by employing a pixel-level processor that takes and compresses the multiple samples within a single measurement time. The pixels in the sensor take multiple samples from the fluorescent optical signal in sub-nanosecond resolution and compute the average photon arrival time of the optical signal. Thanks to the multiple sampling of the signal, the measurement is insensitive to the shape or the pulse-width of excitation, providing better accuracy and pixel uniformity than conventional rapid lifetime determination (RLD) methods. The proposed single-shot image sensor also improves the imaging speed by orders of magnitude compared to other conventional center-of-mass methods (CMM). Second, we propose a 3-D camera with a background light suppression scheme which is adaptable to various lighting conditions. Previous 3-D cameras are not operable in outdoor conditions because they suffer from measurement errors and saturation problems under high background light illumination. We propose a reconfigurable architecture with column-parallel discrete-time background light cancellation circuit. Implementing the processor at the column level allows an order of magnitude reduction in pixel size as compared to existing pixel-level processors. The column-level approach also provides reconfigurable operation modes for optimal performance in all lighting conditions. For example, the sensor can operate at the best frame-rate and resolution without the presence of background light. If the background light saturates the sensor or increases the shot noise, the sensor can adjust the resolution and frame-rate by pixel binning and superresolution techniques. This effectively enhances the well capacity of the pixel to compensate for the increase shot noise, and speeds up the frame processing to handle the excessive background light. A fabricated prototype sensor can suppress the background light more than 100-klx while achieving a very small pixel size of 5.9μm.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/136950/1/eecho_1.pd

Development of high performance readout ASICs for silicon photomultipliers (SiPMs)

Silicon Photomultipliers (SiPMs) are novel kind of solid state photon detectors with ex- tremely high photon detection resolution. They are composed of hundreds or thousands of avalanche photon diode pixels connected in parallel. These avalanche photon diodes are operated in Geiger Mode. SiPMs have the same magnitude of multiplication gain compared to the conventional photomultipliers (PMTs). Moreover, they have a lot of advantages such as compactness, relatively low bias voltage and magnetic field immunity etc. Special readout electronics are required to preserve the high performance of the detector. KLauS and STiC are two CMOS ASIC chips designed in particular for SiPMs. KLauS is used for SiPM charge readout applications. Since SiPMs have a much larger detector capacitance compared to other solid state photon detectors such as PIN diodes and APDs, a few special techniques are used inside the chip to make sure a descent signal to noise ratio for pixel charge signal can be obtained. STiC is a chip dedicated to SiPM time-of-flight applications. High bandwidth and low jitter design schemes are mandatory for such applications where time jitter less than tens of picosends is required. Design schemes and error analysis as well as measurement results are presented in the thesis

Emerging semiconductor nanostructure materials for single-photon avalanche diodes

Detecting of light at the single photon level has a far-reaching impact that enables a broad range of applications. In sensing, advances in single-photon detection enable low light applications such as night-time operation, rapid satellite communication, and long-range three-dimensional imaging. In biomedical engineering, advancing single-photon detection technologies positively impacts patient care through important applications like singlet oxygen detection for dose monitoring in cancer treatment. In industry, impacts are made on state-of-the-art technologies like quantum communication which relies on the efficient detection of light at the fundamental limit. While the high impact of single-photon detection technologies is clear, the potential for improvement and challenges faced by prominent single-photon detection technologies remains. Superconducting single-photon detectors push the bounds of performance, but their high cost and lack of portability limits their prospect for far reaching applicability. Single-photon avalanche diodes (SPADs) are a promising alternative which can be made portable, absent of the need for cryogenic cooling, but they generally lack the performance of superconducting detectors. The materials in SPAD designs dictate operation, and conventional materials implemented being defined according to intrinsic material properties, limits SPAD performance. However, new classes of advanced materials are being realized which exhibit modified electromagnetic properties from the engineered arrangement of subwavelength structural units and low-dimensional properties. Such materials include metamaterials and low-dimensional materials, and they have been shown to enhance optoelectrical properties that are critical to avalanche photodiodes, like rapid photo response, enhanced absorption, and reduced dark current. In this work, the application of such advanced materials in SPADs is explored. Tapered nanowires and nanowire arrays are optimized for enhanced absorption and shown experimentally at room temperature to demonstrate high speed near-unity absorptance response at the single-photon level. In the metamaterial and nanowire devices, the gain and timing jitter are shown to be significantly improved over conventional bulk-based designs. Furthermore, the modelling of metamaterials in a SPAD device design and its operation with external single-photon detection circuitry is studied. The analysis is further shown to extend down to single nanowire devices which offers an elegant approach for integrated photonic circuits

Semiconductor photodetectors for photon-starved applications in the short-wavelength infrared spectral region

The design, fabrication and characterisation of planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors is described in this Thesis. These devices utilise a Si avalanche multiplication layer, and an adjacent Ge layer to absorb short-wave infrared incident photons. The innovative planar geometry design ensures the confinement of the high electric field to the centre of the detector away from the exposed sidewalls resulting in significantly reduced dark count rate (DCR). Planar Ge-on-Si SPADs were fabricated and characterised in terms of single-photon detection efficiency (SPDE), DCR, and timing jitter. These devices exhibited SPDE of almost one order of magnitude greater than previously reported, with the highest SPDE measured being 38%. The dark count rates per unit area were approximately 4 orders of magnitude less than equivalent mesa devices. A record-low noise equivalent power of 4 × 10-17 WHz-1/2 was obtained, more than two orders of magnitude lower than the previous best reported value. The lowest timing jitter of 26 µm diameter devices was 150 ps. These devices exhibited lower afterpulsing when compared to a commercial InGaAs/InP SPAD detector, illustrating the potential for high count rate operation. An investigation of an SPDE spectral dependence at different operating temperatures revealed that efficient single-photon detection of 1550 nm wavelength light will require an operating temperature of 245 K. Laboratory-based light detection and ranging (LIDAR) experiments using the time-offlight approach were performed using an individual Ge-on-Si SPAD detector. This approach allowed depth and intensity profiles of scanned targets to be reconstructed. Based on these results, a parametric LIDAR model was used to estimate LIDAR performance at long distances. For example, eye-safe sub-mW average laser power levels would be sufficient for imaging at kilometre distances. It was demonstrated that by employing appropriate image processing algorithms the total acquisition time can be reduced down to a few seconds for a 10000 pixels image at kilometre range, illustrating the potential for rapid three-dimensional imaging for automotive applications.School of Engineering and Physical Science

High speed event-based visual processing in the presence of noise

Standard machine vision approaches are challenged in applications where large amounts of noisy temporal data must be processed in real-time. This work aims to develop neuromorphic event-based processing systems for such challenging, high-noise environments. The novel event-based application-focused algorithms developed are primarily designed for implementation in digital neuromorphic hardware with a focus on noise robustness, ease of implementation, operationally useful ancillary signals and processing speed in embedded systems

Eighth International Workshop on Laser Ranging Instrumentation

The Eighth International Workshop for Laser Ranging Instrumentation was held in Annapolis, Maryland in May 1992, and was sponsored by the NASA Goddard Space Flight Center in Greenbelt, Maryland. The workshop is held once every 2 to 3 years under differing institutional sponsorship and provides a forum for participants to exchange information on the latest developments in satellite and lunar laser ranging hardware, software, science applications, and data analysis techniques. The satellite laser ranging (SLR) technique provides sub-centimeter precision range measurements to artificial satellites and the Moon. The data has application to a wide range of Earth and lunar science issues including precise orbit determination, terrestrial reference frames, geodesy, geodynamics, oceanography, time transfer, lunar dynamics, gravity and relativity

3rd International Workshop on Instrumentation for Planetary Missions : October 24–27, 2016, Pasadena, California

The purpose of this workshop is to provide a forum for collaboration, exchange of ideas and information, and discussions in the area of the instruments, subsystems, and other payload-related technologies needed to address planetary science questions. The agenda will compose a broad survey of the current state-of-the-art and emerging capabilities in instrumentation available for future planetary missions.Universities Space Research Association (USRA); Lunar and Planetary Institute (LPI); Jet Propulsion Laboratory (JPL)Conveners: Sabrina Feldman, Jet Propulsion Laboratory, David Beaty, Jet Propulsion Laboratory ; Science Organizing Committee: Carlton Allen, Johnson Space Center (retired) [and 12 others