723 research outputs found

    CMOS VLSI correlator design for radio-astronomical signal processing : a thesis presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Engineering at Massey University, Auckland, New Zealand

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    Multi-element radio telescopes employ methods of indirect imaging to capture the image of the sky. These methods are in contrast to direct imaging methods whereby the image is constructed from sensor measurements directly and involve extensive signal processing on antenna signals. The Square Kilometre Array, or the SKA, is a future radio telescope of this type that, once built, will become the largest telescope in the world. The unprecedented scale of the SKA requires novel solutions to be developed for its signal processing pipeline one of the most resource-consuming parts of which is the correlator. The SKA uses the FX correlator construction that consists of two parts: the F part that translates antenna signals into frequency domain and the X part that cross-correlates these signals between each other. This research focuses on the integrated circuit design and VLSI implementation issues of the X part of a very large FX correlator in 28 nm and 130 nm CMOS. The correlator’s main processing operation is the complex multiply-accumulation (CMAC) for which custom 28 nm CMAC designs are presented and evaluated. Performance of various memories inside the correlator also affects overall efficiency, and input-buffered and output-buffered approaches are considered with the goal of improving upon it. For output-buffered designs, custom memory control circuits have been designed and prototyped in 130 nm that improve upon eDRAM by taking advantage of sequential access patterns. For the input-buffered architecture, a new scheme is proposed that decreases the usage of the input-buffer memory by a third by making use of multiple accumulators in every CMAC. Because cross-correlation is a very data-intensive process, high-performance SerDes I/O is essential to any practical ASIC implementation. On the I/O design, the 28 nm full-rate transmitter delivering 15 Gbps per lane is presented. This design consists of the scrambler, the serialiser, the digital VCO with analog fine-tuning and the SST driver including features of a 4-tap FFE, impedance tuning and amplitude tuning

    ULTRA-LOW-JITTER, MMW-BAND FREQUENCY SYNTHESIZERS BASED ON A CASCADED ARCHITECTURE

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    Department of Electrical EngineeringThis thesis presents an ultra-low-jitter, mmW-band frequency synthesizers based on a cascaded architecture. First, the mmW-band frequency synthesizer based on a CP PLL is presented. At the first stage, the CP PLL operating at GHz-band frequencies generated low-jitter output signals due to a high-Q VCO. At the second stage, an ILFM operating at mmW-band frequencies has a wide injection bandwidth, so that the jitter performance of the mmW-band output signals is determined by the GHz-range PLL. The proposed ultra-low-jitter, mmW-band frequency synthesizer based on a CP PLL, fabricated in a 65-nm CMOS technology, generated output signals from GHz-band frequencies to mmW-band frequencies, achieving an RMS jitter of 206 fs and an IPN of ???31 dBc. The active silicon area and the total power consumption were 0.32 mm2 and 42 mW, respectively. However, due to a large in-band phase noise contribution of a PFD and a CP in the CP PLL, this first stage was difficult to achieve an ultra-low in-band phase noise. Second, to improve the in-band phase noise further, the mmW-band frequency synthesizer based on a digital SSPLL is presented. At the first stage, the digital SSPLL operating at GHz-band frequencies generated ultra-low-jitter output signals due to its sub-sampling operation and a high-Q GHz VCO. To minimize the quantization noise of the voltage quantizer in the digital SSPLL, this thesis presents an OSVC as a voltage quantizer while a small amount of power was consumed. The proposed ultra-low-jitter, mmW-band frequency synthesizer fabricated in a 65-nm CMOS technology, generated output signals from GHz-band frequencies to mmW-band frequencies, achieving an RMS jitter of 77 fs and an IPN of ???40 dBc. The active silicon area and the total power consumption were 0.32 mm2 and 42 mW, respectively.clos

    Analysis of high-order sub-harmonically injection-locked oscillators

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    High-order subharmonically injection-locked oscillators have recently been proposed for low phase-noise frequency generation, with carrier-selection capabilities. This work focuses on the analysis of this frequency-synthesis procedure, with emphasis on the oscillator capability to discriminate the input tones, under the variation of a tuning voltage. The oscillator is described with an analytical envelopedomain formulation, leading to an expression for the oscillator phase shift with respect to the input source. The average of this phase shift is shown to evolve in a continuous manner in the distinct synchronization bands obtained versus the tuning voltage. Then, the subsynchronized operation at a high frequency ratio (N = 30) is considered, showing the applicability of envelopedomain simulations under various Fourier decompositions and sampling rates. The synchronization bands are obtained through the phase averaging technique. The analysis has been applied to a prototype at 2.7 GHz that has been manufactured and measured.This work was supported by the Spanish Ministry of Science, Innovation and Universities and the European Regional Development Fund (ERDF/FEDER) under the research project TEC2017-88242-C3-1-R

    Gunn diodes and devices (bibliography for 1978-1980)

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    A listing of about 500 works from Soviet and foreign scientific literature on Gunn diodes and devices based on them is presented. The bibliography includes publications in which various questions pertinent to all (or several) types of semiconductor instruments in the superhigh frequency range are mentioned. A subject index is included

    Analysis of Internally Bandlimited Multistage Cubic-Term Generators for RF Receivers

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    Adaptive feedforward error cancellation applied to correct distortion arising from third-order nonlinearities in RF receivers requires low-noise low-power reference cubic nonidealities. Multistage cubic-term generators utilizing cascaded nonlinear operations are ideal in this regard, but the frequency response of the interstage circuitry can introduce errors into the cubing operation. In this paper, an overview of the use of cubic-term generators in receivers relative to other applications is presented. An interstage frequency response plan is presented for a receiver cubic-term generator and is shown to function for arbitrary three-signal third-order intermodulation generation. The noise of such circuits is also considered and is shown to depend on the total incoming signal power across a particular frequency band. Finally, the effects of the interstage group delay are quantified in the context of a relevant communication standard requirement

    Analysis and equalization of data-dependent jitter

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    Data-dependent jitter limits the bit-error rate (BER) performance of broadband communication systems and aggravates synchronization in phase- and delay-locked loops used for data recovery. A method for calculating the data-dependent jitter in broadband systems from the pulse response is discussed. The impact of jitter on conventional clock and data recovery circuits is studied in the time and frequency domain. The deterministic nature of data-dependent jitter suggests equalization techniques suitable for high-speed circuits. Two equalizer circuit implementations are presented. The first is a SiGe clock and data recovery circuit modified to incorporate a deterministic jitter equalizer. This circuit demonstrates the reduction of jitter in the recovered clock. The second circuit is a MOS implementation of a jitter equalizer with independent control of the rising and falling edge timing. This equalizer demonstrates improvement of the timing margins that achieve 10/sup -12/ BER from 30 to 52 ps at 10 Gb/s

    Self-Calibrated, Low-Jitter and Low-Reference-Spur Injection-Locked Clock Multipliers

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    Department of Electrical EngineeringThis dissertation focuses primarily on the design of calibrators for the injection-locked clock multiplier (ILCM). ILCMs have advantage to achieve an excellent jitter performance at low cost, in terms of area and power consumption. The wide loop bandwidth (BW) of the injection technique could reject the noise of voltage-controlled oscillator (VCO), making it thus suitable for the rejection of poor noise of a ring-VCO and a high frequency LC-VCO. However, it is difficult to use without calibrators because of its sensitiveness in process-voltage-temperature (PVT) variations. In Chapter 2, conventional frequency calibrators are introduced and discussed. This dissertation introduces two types of calibrators for low-power high-frequency LC-VCO-based ILFMs in Chapter 3 and Chapter 4 and high-performance ring-VCO-based ILCM in Chapter 5. First, Chapter 3 presents a low power and compact area LC-tank-based frequency multiplier. In the proposed architecture, the input signals have a pulsed waveform that involves many high-order harmonics. Using an LC-tank that amplifies only the target harmonic component, while suppressing others, the output signal at the target frequency can be obtained. Since the core current flows for a very short duration, due to the pulsed input signals, the average power consumption can be dramatically reduced. Effective removal of spurious tones due to the damping of the signal is achieved using a limiting amplifier. In this work, a prototype frequency tripler using the proposed architecture was designed in a 65 nm CMOS process. The power consumption was 950 ??W, and the active area was 0.08 mm2. At a 3.12 GHz frequency, the phase noise degradation with respect to the theoretical bound was less than 0.5 dB. Second, Chapter 4 presents an ultra-low-phase-noise ILFM for millimeter wave (mm-wave) fifth-generation (5G) transceivers. Using an ultra-low-power frequency-tracking loop (FTL), the proposed ILFM is able to correct the frequency drifts of the quadrature voltage-controlled oscillator of the ILFM in a real-time fashion. Since the FTL is monitoring the averages of phase deviations rather than detecting or sampling the instantaneous values, it requires only 600??W to continue to calibrate the ILFM that generates an mm-wave signal with an output frequency from 27 to 30 GHz. The proposed ILFM was fabricated in a 65-nm CMOS process. The 10-MHz phase noise of the 29.25-GHz output signal was ???129.7 dBc/Hz, and its variations across temperatures and supply voltages were less than 2 dB. The integrated phase noise from 1 kHz to 100 MHz and the rms jitter were???39.1 dBc and 86 fs, respectively. Third, Chapter 5 presents a low-jitter, low-reference-spur ring voltage-controlled oscillator (ring VCO)-based ILCM. Since the proposed triple-point frequency/phase/slope calibrator (TP-FPSC) can accurately remove the three root causes of the frequency errors of ILCMs (i.e., frequency drift, phase offset, and slope modulation), the ILCM of this work is able to achieve a low-level reference spur. In addition, the calibrating loop for the frequency drift of the TP-FPSC offers an additional suppression to the in-band phase noise of the output signal. This capability of the TP-FPSC and the naturally wide bandwidth of the injection-locking mechanism allows the ILCM to achieve a very low RMS jitter. The ILCM was fabricated in a 65-nm CMOS technology. The measured reference spur and RMS jitter were ???72 dBc and 140 fs, respectively, both of which are the best among the state-of-the-art ILCMs. The active silicon area was 0.055 mm2, and the power consumption was 11.0 mW.clos
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