High rejection self-oscillating up-conversion mixer for fifth-generation communications

This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm2

암 진단 및 치료에 적용 가능한 마이크로파 능동 집적 탐침에 관한 연구

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2015. 2. 권영우.본 논문에서는 암 진단 및 치료에 적용 가능한 초소형 마이크로파 능동 집적 탐침에 대해 기술하였다. 생체 조직의 광대역 측정과 저전력 온열 치료에 적용 하기 위해 유전율 측정 회로를 평면형 동축 탐침에 집적하였고, 마이크로파 발생 회로를 어플리케이터에 집적하였다. MEMS 기술과 MMIC 기술을 적용함으로써 단일 플랫폼에 집적된 시스템으로 구현하여 집적도를 향상 시키고, 시스템을 소형화 하였다. 먼저 multi-state reflectometer를 이용하여 암 진단에 활용 가능한복소 유전율 측정 기술에 대해 제안하였다. 2, 16 GHz에서 동작하는 광대역 reflectometer는 이중 대역 위상 고정 루프 (PLL), 임피던스 튜너, RF 전력 검출기 등의 MMIC와 MEMS 기반의 방향성 결합기, 평면형 탐침을 집적하여 구현하였다. 제작한 능동 집적 탐침 시스템을 이용하여 생체 조직과 암 조직 등의 유전율을 측정함으로써 유용함을 확인하였고, 측정된 유전율과 표준값을 비교하여 시스템의 측정 정확도를 검증하였다. 또한 저전력 마이크로파 온열 치료 요법을 위한 능동 집적 탐침을 개발하였다. MEMS 공정을 통해 제작한 평면형 실리콘 탐침에 전압 제어 발진기, 구동 증폭기, 전력 증폭기를 집적하여 능동 집적 탐침 시스템을 제작하였다. 치료를 진행하는 동안, 마이크로파의 전력을 측정할 수 있도록 전력 검출기와 방향성 결합기도 함께 집적하였다. 암, 근육 등 다양한 생체 조직을 이용한 실험의 결과로부터 Ku 대역의 주파수에서 저전력 마이크로파 온열 치료가 가능함을 확인하였다. 마지막으로 자성 나노입자를 이용한 온열 치료에 적용하기 위해 능동 집적 탐침을 개발하였다. 자성 나노입자가 온열 치료 요법에 미치는 영향을 분석하기 위해 전자기-열 결합 해석을 수행하였고, 이로부터 자성 나노입자의 선택도 향상을 위한 최적의 주파수를 결정하였다. 발진기와 전력 증폭기 MMIC와 이중 채널 로그 전력 검출기, 방향성 결합기를 탐침에 집적하여 시스템을 제작하였다. 이를 이용한 실험 결과로부터 능동 집적 탐침의 성능을 확인하였으며, 자성 나노입자가 저전력 및 암 특이 마이크로파 온열 치료의 효율과 선택도를 향상시키는데 유용함을 검증하였다.This thesis presents miniaturized microwave active integrated probe systems applicable to cancer detection and treatment. To realize broadband detection and low-power hyperthermia, planar-type coaxial probes and heat applicators have been integrated with active circuits for permittivity measurement and microwave generation, respectively. Each integrated system is implemented on a single platform using Microelectromechanical Systems (MEMS) and monolithic microwave integrated circuit (MMIC) technologies for miniaturization and integration. First, a complex permittivity measurement technique using an integrated multi-state reflectometer (MSR) is proposed for cancer detection application. The broadband MSR covering both 2 and 16 GHz bands consists of a dual-band phase-locked loop, a directional coupler, an impedance tuner, two RF power detectors, and a micromachined silicon planar probe with an open-ended coaxial aperture. All the active and passive circuit components have been integrated on the micromachined probe platform in a small form factor of 6.8 mm × 50 mm × 0.6 mm. The performance of the fabricated integrated probe has been evaluated by comparing the measured permittivities of 0.9% saline, pork muscle, fat, and xenografted human breast cancer with the reference data. For low-power microwave hyperthermia, a Ku-band active integrated heat applicator is demonstrated. A planar-type coaxial applicator has been fabricated using silicon micromachining technology, on which a Ku-band voltage controlled oscillator (VCO), a driver amplifier, and a power amplifier (PA) have been integrated. A directional coupler and power detectors are employed for power monitoring. The fully integrated heat applicator has been realized in a small footprint of 8 mm × 56 mm. In-vitro and in-vivo ablation experiments on pork muscle, fat, and human-cancer xenografted nude mouse demonstrate the feasibility of low-power hyperthermia using Ku-band microwaves. Finally, an active integrated heat applicator for magnetic nanoparticle (MNP)-assisted hyperthermia is developed. The effect of the MNP on microwave hyperthermia has been analyzed by a coupled electromagnetic-thermal analysis. The optimum frequency for hyperthermia is determined by the coupled analysis. A 2-GHz source module consisting of a VCO and a PA has been implemented in MMICs and integrated on the heat applicator platform. A dual-channel log detector and a directional coupler have been also employed to monitor the power levels during hyperthermia. Experiment results show not only sufficient heating performance of the integrated applicator, but also the effectiveness of the MNP for low-power and cancer-specific microwave hyperthermia.Abstract i Contents iv List of Figures viii List of Tables xv 1. Introduction 1 1.1 Motivation 1 1.2 Microwave Cancer Detection 4 1.3 Microwave Hyperthermia 5 1.4 Outline of Thesis 7 2. Active Integrated Probe for Cancer Detection 9 2.1 Introduction 9 2.2 Principle of Operation 13 2.2.1 Multi-State Reflectometer 14 2.2.2 Governing Equation for Complex Permittivity 15 2.2.3 Determination of Complex Permittivity 17 2.2.4 Calibration 19 2.3 Design and Fabrication 21 2.3.1 Micromachined Planar Coaxial Probe 21 2.3.2 Impedance Tuner 30 2.3.3 Directional Coupler 34 2.3.4 Power Detector 37 2.3.5 Signal Source 39 2.3.6 Active Integrated Probe System 43 2.4 Measurement Results 46 2.5 Summary 52 3. Ku-Band Active Integrated Heat Applicator for Cancer Ablation 54 3.1 Introduction 54 3.2 Design and Fabrication 57 3.2.1 Micromachined Planar Coaxial Applicator 58 3.2.2 Microwave Source 63 3.2.3 Power Monitoring Circuits 67 3.2.4 Ku-Band Active Integrated Applicator System 67 3.3 Experiment Results 70 3.4 Summary 77 4. Active Integrated Heat Applicator for Magnetic Nanoparticle-Assisted Hyperthermia 79 4.1 Introduction 79 4.2 Magnetic Nanoparticle (MNP) 82 4.2.1 Heating mechanism of MNP 83 4.2.2 Permeability of MNP 84 4.3 Coupled Electromagnetic-Thermal Analysis 88 4.3.1 Coupled Electromagnetic-Thermal Problems 88 4.3.2 Electromagnetic Analysis 92 4.3.3 Thermal Analysis 94 4.3.4 Analysis Results 96 4.4 Design and Fabrication 103 4.4.1 Spiral Applicator 104 4.4.2 Microwave Source 107 4.4.3 Power Monitoring Circuits 111 4.4.4 Active Integrated Applicator for MNP-Assisted Hyperthermia 119 4.5 Experiment Results 122 4.6 Summary 132 5. Conclusion 134 Bibliography 137 Abstract in Korean 152Docto

System-Level Integrated Circuit (SLIC) Technology Development for Phased Array Antenna Applications

This report documents the efforts and progress in developing a 'system-level' integrated circuit, or SLIC, for application in advanced phased array antenna systems. The SLIC combines radio-frequency (RF) microelectronics, digital and analog support circuitry, and photonic interfaces into a single micro-hybrid assembly. Together, these technologies provide not only the amplitude and phase control necessary for electronic beam steering in the phased array, but also add thermally-compensated automatic gain control, health and status feedback, bias regulation, and reduced interconnect complexity. All circuitry is integrated into a compact, multilayer structure configured for use as a two-by-four element phased array module, operating at 20 Gigahertz, using a Microwave High-Density Interconnect (MHDI) process. The resultant hardware is constructed without conventional wirebonds, maintains tight inter-element spacing, and leads toward low-cost mass production. The measured performances and development issues associated with both the two-by-four element module and the constituent elements are presented. Additionally, a section of the report describes alternative architectures and applications supported by the SLIC electronics. Test results show excellent yield and performance of RF circuitry and full automatic gain control for multiple, independent channels. Digital control function, while suffering from lower manufacturing yield, also proved successful

Millimeter-Wave MMICs and Applications

As device technology improves, interest in the millimeter-wave band grows. Wireless communication systems migrate to higher frequencies, millimeter-wave radars and passive sensors find new solid-state implementations that promise improved performance, and entirely new applications in the millimeter-wave band become feasible. The circuit or system designer is faced with a new and unique set of challenges and constraints to deal with in order to use this portion of the spectrum successfully. In particular, the advantages of monolithic integration become increasingly important. This thesis presents many new developments in Monolithic Millimeter-Wave Integrated Circuits (MMICs), both the chips themselves and systems that use them. It begins with an overview of the various applications of millimeter waves, including a discussion of specific projects that the author is involved in and why many of them demand a MMIC implementation. In the subsequent chapters, new MMIC chips are described in detail, as is the role they play in real-world projects. Multi-chip modules are also presented with specific attention given to the practical details of MMIC packaging and multi-chip integration. The thesis concludes with a summary of the works presented thus far and their overall impact on the field of millimeter-wave engineering.</p

Design and characterization of GaAs multilayer CPW components and circuits for advanced MMICs

With the demand of modern wireless communications, monolithic microwave integrated circuit (MMIC) has become a very promising technique as it is mass-productive, low loss and highly integrated. Microstrip and Coplanar Waveguide (CPW) are both widely used in MMIC. Particularly, CPW has seen a rapid increase on research works recent years due to its unique capability including having less parasitic contribution to the circuit. In this thesis, a novel 3-D multilayer CPW technique is presented. Semi-insulating (S.I.) GaAs substrate, polyimide dielectric layers and Titanium/Gold metal layers are employed in this five-layer structure. The active devices are based on GaAs pHEMTs technology provided by Filtronic Compound Semiconductor Ltd. The fabricated components are simulated and characterized by Agilent Advanced Design System (ADS) and Momentum E.M simulator. A novel Open-short-through de-embedding technique is developed and applied to the passive circuits in order to reduce the impact of pads on probing. A new library of components and circuits are built in this work. Various structures of 3-D CPW transmission lines are designed and characterized to demonstrate the low-loss and highly compact characters. Meanwhile, the influence of various combinations of metal and dielectric layers is studied in order to provide designers with great flexibility for the realization of novel compact transmission lines for 3D MMICs. The effect of temperature on the performance of the transmission lines has also been investigated. Moreover, a set of compact capacitors are designed and proven to have high capacitance density with low parasitics. Finally, based on the extraction of pHEMT parameters from circuit characterization and analysis program (IC-CAP), RF switch and active filter MMICs have been designed and simulated to provide references for further development of 3-D multilayer CPW circuits.EThOS - Electronic Theses Online ServiceGBUnited Kingdo

Design and characterization of monolithic millimeter-wave active and passive components, low-noise and power amplifiers, resistive mixers, and radio front-ends

This thesis focuses on the design and characterization of monolithic active and passive components, low-noise and power amplifiers, resistive mixers, and radio front-ends for millimeter-wave applications. The thesis consists of 11 publications and an overview of the research area, which also summarizes the main results of the work. In the design of millimeter-wave active and passive components the main focus is on realized CMOS components and techniques for pushing nanoscale CMOS circuits beyond 100 GHz. Test structures for measuring and analyzing these components are shown. Topologies for a coplanar waveguide, microstrip line, and slow-wave coplanar waveguide that are suitable for implementing transmission lines in nanoscale CMOS are presented. It is demonstrated that the proposed slow-wave coplanar waveguide improves the performance of the transistor-matching networks when compared to a conventional coplanar waveguide and the floating slow-wave shield reduces losses and simplifies modeling when extended below other passives, such as DC decoupling and RF short-circuiting capacitors. Furthermore, wideband spiral transmission line baluns in CMOS at millimeter-wave frequencies are demonstrated. The design of amplifiers and a wideband resistive mixer utilizing the developed components in 65-nm CMOS are shown. A 40-GHz amplifier achieved a +6-dBm 1-dB output compression point and a saturated output power of 9.6 dBm with a miniature chip size of 0.286 mm². The measured noise figure and gain of the 60-GHz amplifier were 5.6 dB and 11.5 dB, respectively. The V-band balanced resistive mixer achieved a 13.5-dB upconversion loss and 34-dB LO-to-RF isolation with a chip area of 0.47 mm². In downconversion, the measured conversion loss and 1-dB input compression point were 12.5 dB and +5 dBm, respectively. The design and experimental results of low-noise and power amplifiers are presented. Two wideband low-noise amplifiers were implemented in a 100-nm metamorphic high electron mobility transistor (HEMT) technology. The amplifiers achieved a 22.5-dB gain and a 3.3-dB noise figure at 94 GHz and a 18-19-dB gain and a 5.5-7.0-dB noise figure from 130 to 154 GHz. A 60-GHz power amplifier implemented in a 150-nm pseudomorphic HEMT technology exhibited a +17-dBm 1-dB output compression point with a 13.4-dB linear gain. In this thesis, the main system-level aspects of millimeter-wave transmitters and receivers are discussed and the experimental circuits of a 60-GHz transmitter front-end and a 60-GHz receiver with an on-chip analog-to-digital converter implemented in 65-nm CMOS are shown. The receiver exhibited a 7-dB noise figure, while the saturated output power of the transmitter front-end was +2 dBm. Furthermore, a wideband W-band transmitter front-end with an output power of +6.6 dBm suitable for both image-rejecting superheterodyne and direct-conversion transmission is demonstrated in 65-nm CMOS

RECONFIGURABLE POWER AMPLIFIER WITH TUNABLE INTERSTAGE MATCHING NETWORK USING GaAs MMIC AND SURFACE-MOUNT TECHNOLOGY

As the demand of reconfigurable devices increases, the possibility of exploiting the interstage matching network in a two-stage amplifier to provide center frequency tuning capability is explored. While placement of tuning elements at the input and/or output matching network has some disadvantages, placement of tuning elements in the interstage absorbs the lossy components characteristics into useful attributes. The circuit design methodology includes graphical method to determine the bandpass topology that achieves high Q-contour on the Smith chart thus result in narrow bandwidth. T-section and π-section topologies are used to match reactive terminations provided by the first and second amplifier stages. The design methodology also includes utilization of interstage mismatch loss that decreases as increasing frequency to compensate for amplifier gain roll-off and equalize the gain at different tuning states. In prototype realization, three design configurations are discussed in this thesis: 1) a discrete design for operation between 0.1 – 0.9 GHz with the total layout area of 7.5 mm x 12.5 mm, 2) a partial monolithic design (Quasi-MMIC) for operation between 0.9 – 2.4 GHz that is 25 times smaller layout area compared to the discrete design, and 3) a conceptual design of integrated monolithic reconfigurable PA for operation between 0.9 – 2.4 GHz that is 130 times smaller layout area compared to the discrete design. One variant of the fabricated reconfigurable PA offers advantage of 4-states center frequency tuning from 1.37 GHz to 1.95 GHz with gain of 21.5 dB (+ 0.7 dB). The feasibility of interstage matching network as tuning elements in reconfigurable power amplifier has been explored. The input and output matching networks are fixed while the interstage impedances are varied using electronic switching (discrete SP4T and GaAs FET switches). The discrete design is suited for the operation at low frequency (fo < 1GHz), while monolithic implementation of the tunable interstage matching network is required for higher frequency operation due to size limitation and parasitic effects. The reconfigurable PA using MMIC tuner was designed at higher frequency to possibly cover GSM, CDMA, Bluetooth, and WiMAX frequency (0.9 – 2.4 GHz)