Switched Capacitor Voltage Converter

This project supports IoT development by reducing the power con- sumption and physical footprint of voltage converters. Our switched- capacitor IC design steps down an input of 1:0 - 1:4 V to 0:6 V for a decade of load current from 5 - 50A

Efficiency Comparison of Inductor-, Capacitor- and Resonant-based Converters Fully Integrated in CMOS Technology

International audienceThe full integration of DC-DC converters offers great promise for dramatic reduction in power consumption and the number of board-level components in complex systems on chip. Some papers compare the numerous published on-chip and on-die converter structures, but there is the need for an approach to accurately compare the main basic DC-DC conversion topologies. Therefore, this paper presents a method to compare the efficiencies of CMOS integrated capacitive-, inductive-and resonant-based switching converters. The loss mechanism of each structure in hard-switching conditions is detailed and the analytical equations of the power loss and output voltage are given as a function of few CMOS technology parameters. The resulting models can be used to accurately predict converter efficiency in the early design phase, to compare the basic structure in particular the technology node or to orient the passive choice. The proposed method is then applied to design, optimize and compare fully-integrated power delivery requirements on a 1mm 2 on-die area in 65nm CMOS technology over three decades of power density. The results also underline the high efficiency of the promising resonant-based converter. Index Terms—integrated switching power supply, on-chip voltage regulator, switched-capacitor converter, inductive power converter, resonant converte

Green on-chip inductors in three-dimensional integrated circuits

This thesis focuses on the technique for the improvement of quality factor and inductance of the TSV inductors and then on the utilization of TSV inductors in various on-chip applications such as DC-DC converter and resonant clocking. Through-silicon-vias (TSVs) are the enabling technique for three-dimensional integrated circuits (3D ICs). However, their large area significantly reduces the benefits that can be obtained by 3D ICs. On the other hand, a major limiting factor for the implementation of many on-chip circuits such as DC-DC converters and resonant clocking is the large area overhead induced by spiral inductors. Several works have been proposed in the literature to make inductors out of idle TSVs. In this thesis, the technique to improve the quality factor and inductance is proposed and then discusses about two applications utilizing TSV inductors i.e., inductive DC-DC converters and LC resonant clocking. The TSV inductor performs inferior to spiral inductors due to its increases losses. Hence to improve the performance of the TSV inductor, the losses should be reduced. Inductive DC-DC converters become prominent for on-chip voltage conversion because of their high efficiency compared with other types of converters (e.g. linear and capacitive converters). On the other hand, to reduce on-chip power, LC resonant clocking has become an attractive option due to its same amplitude and phases compared to other resonant clocking methods such as standing wave and rotary wave. A major challenge for both applications is associated with the required inductor area. In this thesis, the effectiveness of such TSV inductors in addressing both challenges are demonstrated --Abstract, page iv

A versatile low-cost microcontroller-based 4-channel potentiostat platform for electrochemical biosensor development

Electrochemical biosensors provide high specificity of analyte detection in different body fluids. A potentiostat is the instrument used to control the applied potential and measure current flow in the electrochemical cell, where the analyte detection reaction occurs. Advances in electronics and microcontrollers have enabled such sophisticated instruments to be built at a very low cost with sufficient performance. We report the analysis, design, and prototyping of a low-cost 4-channel potentiostat that is fully integrated into one PCB connected to an Arduino Uno board, as an Arduino shield, which could be used for both biosensor development and applications. As an Arduino-based instrument, the MATLAB-based software of the potentiostat is relatively easily modified for different biosensor requirements, providing great versatility for end users. We believe that this design will be valuable for electrochemical biosensors researchers as well as students interested in electrochemistry. The reported low-cost architecture could also be adopted to create low-cost diagnostic instruments for resource-limited settings

Time-Domain/Digital Frequency Synchronized Hysteresis Based Fully Integrated Voltage Regulator

abstract: Power management integrated circuit (PMIC) design is a key module in almost all electronics around us such as Phones, Tablets, Computers, Laptop, Electric vehicles, etc. The on-chip loads such as microprocessors cores, memories, Analog/RF, etc. requires multiple supply voltage domains. Providing these supply voltages from off-chip voltage regulators will increase the overall system cost and limits the performance due to the board and package parasitics. Therefore, an on-chip fully integrated voltage regulator (FIVR) is required. The dissertation presents a topology for a fully integrated power stage in a DC-DC buck converter achieving a high-power density and a time-domain hysteresis based highly integrated buck converter. A multi-phase time-domain comparator is proposed in this work for implementing the hysteresis control, thereby achieving a process scaling friendly highly digital design. A higher-order LC notch filter along with a flying capacitor which couples the input and output voltage ripple is implemented. The power stage operates at 500 MHz and can deliver a maximum power of 1.0 W and load current of 1.67 A, while occupying 1.21 mm2 active die area. Thus achieving a power density of 0.867 W/mm2 and current density of 1.377 A/mm2. The peak efficiency obtained is 71% at 780 mA of load current. The power stage with the additional off-chip LC is utilized to design a highly integrated current mode hysteretic buck converter operating at 180 MHz. It achieves 20 ns of settling and 2-5 ns of rise/fall time for reference tracking. The second part of the dissertation discusses an integrated low voltage switched-capacitor based power sensor, to measure the output power of a DC-DC boost converter. This approach results in a lower complexity, area, power consumption, and a lower component count for the overall PV MPPT system. Designed in a 180 nm CMOS process, the circuit can operate with a supply voltage of 1.8 V. It achieves a power sense accuracy of 7.6%, occupies a die area of 0.0519 mm2, and consumes 0.748 mW of power.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Analysis and comparative study of different converter modes in modular second life hybrid battery energy storage systems

The use of ex-transportation battery system (i.e. second life EV/HEV batteries) in grid applications is an emerging field of study. A hybrid battery scheme offers a more practical approach in second life battery energy storage systems because battery modules could be from different sources/ vehicle manufacturers depending on the second life supply chain and have different characteristics e.g. voltage levels, maximum capacity and also different levels of degradations. Recent research studies have suggested a dc-side modular multilevel converter topology to integrate these hybrid batteries to a grid-tie inverter. Depending on the battery module characteristics, the dc-side modular converter can adopt different modes such as boost, buck or boost-buck to suitably transfer the power from battery to the grid. These modes have different switching techniques, control range, different efficiencies, which give a system designer choice on operational mode. This paper presents an analysis and comparative study of all the modes of the converter along with their switching performances in detail to understand the relative advantages and disadvantages of each mode to help to select the suitable converter mode. Detailed study of all the converter modes and thorough experimental results based on a multi-modular converter prototype based on hybrid batteries has been presented to validate the analysis

Merged Two-Stage Power Converter With Soft Charging Switched-Capacitor Stage in 180 nm CMOS

In this paper, we introduce a merged two-stage dc-dc power converter for low-voltage power delivery. By separating the transformation and regulation function of a dc-dc power converter into two stages, both large voltage transformation and high switching frequency can be achieved. We show how the switched-capacitor stage can operate under soft charging conditions by suitable control and integration (merging) of the two stages. This mode of operation enables improved efficiency and/or power density in the switched-capacitor stage. A 5-to-1 V, 0.8 W integrated dc-dc converter has been developed in 180 nm CMOS. The converter achieves a peak efficiency of 81%, with a regulation stage switching frequency of 10 MHz.Interconnect Focus Center (United States. Defense Advanced Research Projects Agency and Semiconductor Research Corporation

Development of Si Device Based Power Converters for High Temperature Operation in HEV Applications

In this dissertation, the feasibility of operating Si devices at 200 ˚C [degree Celsius] is investigated and the guidelines on the development of a high temperature Si converter for operating with 105 ˚C high temperature liquid coolant in hybrid electrical vehicle (HEV) applications are provided. First, the characterization of a Si IGBT operating at 200 ˚C junction temperatures is presented. It is shown that the commercial 175 ˚C Si IGBT under test can be successfully switched at an elevated junction temperature of 200 ˚C with increased but acceptable losses. Second, a comprehensive evaluation of Si IGBT ruggedness at high temperature operation is provided through experiments. The important criteria considering latch-up immunity, short circuit capability, and avalanche capability are given to ensure the safe and reliable operation of Si IGBTs at 200 ˚C. Third, the feasibility of operating Si devices based converters continuously at the junction temperature of 200 ˚C is demonstrated. A Si IGBT phase-leg module is developed for 200 ˚C operation utilizing high temperature packaging technologies and appropriate thermal management. Fourth, a method is proposed to measure the junction temperatures of IGBTs during the converter operation using IGBT short circuit current. The calibration experiments show that the short circuit current has good sensitivity, linearity and selectivity, making the method suitable for use as temperature sensitive electrical parameter (TSEP). By connecting a temperature measurement unit to the converter and giving a short circuit pulse during the converter operation, the IGBT junction temperature can be measured. Fifth, a 30 kW Si IGBT based three-phase converter has been developed for operating at the junction temperature of 200 ˚C with the high temperature coolant in HEV applications. The experimental results demonstrate that the three-phase converter can operate at junction temperature of 200 ˚C with the 105 ˚C high temperature coolant, thus eliminating the need for the additional 65 ˚C coolant in HEV. Additionally, the emerging 600 V GaN HEMT is investigated as a potential replacement of Si devices for high efficiency and high temperature in future HEV applications

3D ICs: An Opportunity for Fully-Integrated, Dense and Efficient Power Supplies

International audienceWith 3D technologies, the in-package solution allows integrated, efficient and granular power supplies to be designed for multi-core processors. As the converter design obtains few benefits from the scaling, 3DIC allows the best technology to be chosen i.e. one which suits the DC-DC converter design. This paper evaluates the achievable power efficiency between on-die and in-package converters using a combination of active (28 and 65nm CMOS nodes) and passive (poly, MIM, vertical capacitor) layers. Based on the same load power consumption, on-die and in-package switched capacitor converters achieve 65% and 78% efficiency, respectively, in a 1mm 2 silicon area. An additional high density capacitance layer (100nF/mm 2) improves efficiency by more than 20 points in 65nm for the same surface which emphasizes the need for dedicated technology for better power management integration. This paper shows that in-package power management is a key alternative for fully-integrated, dense and efficient power supplies