Bit Error Robustness for Energy-Efficient DNN Accelerators

Deep neural network (DNN) accelerators received considerable attention in past years due to saved energy compared to mainstream hardware. Low-voltage operation of DNN accelerators allows to further reduce energy consumption significantly, however, causes bit-level failures in the memory storing the quantized DNN weights. In this paper, we show that a combination of robust fixed-point quantization, weight clipping, and random bit error training (RandBET) improves robustness against random bit errors in (quantized) DNN weights significantly. This leads to high energy savings from both low-voltage operation as well as low-precision quantization. Our approach generalizes across operating voltages and accelerators, as demonstrated on bit errors from profiled SRAM arrays. We also discuss why weight clipping alone is already a quite effective way to achieve robustness against bit errors. Moreover, we specifically discuss the involved trade-offs regarding accuracy, robustness and precision: Without losing more than 1% in accuracy compared to a normally trained 8-bit DNN, we can reduce energy consumption on CIFAR-10 by 20%. Higher energy savings of, e.g., 30%, are possible at the cost of 2.5% accuracy, even for 4-bit DNNs

Bit Error Robustness for Energy-Efficient {DNN} Accelerators

Deep neural network (DNN) accelerators received considerable attention in past years due to saved energy compared to mainstream hardware. Low-voltage operation of DNN accelerators allows to further reduce energy consumption significantly, however, causes bit-level failures in the memory storing the quantized DNN weights. In this paper, we show that a combination of robust fixed-point quantization, weight clipping, and random bit error training (RandBET) improves robustness against random bit errors in (quantized) DNN weights significantly. This leads to high energy savings from both low-voltage operation as well as low-precision quantization. Our approach generalizes across operating voltages and accelerators, as demonstrated on bit errors from profiled SRAM arrays. We also discuss why weight clipping alone is already a quite effective way to achieve robustness against bit errors. Moreover, we specifically discuss the involved trade-offs regarding accuracy, robustness and precision: Without losing more than 1% in accuracy compared to a normally trained 8-bit DNN, we can reduce energy consumption on CIFAR-10 by 20%. Higher energy savings of, e.g., 30%, are possible at the cost of 2.5% accuracy, even for 4-bit DNNs

Circuits and Systems Advances in Near Threshold Computing

Modern society is witnessing a sea change in ubiquitous computing, in which people have embraced computing systems as an indispensable part of day-to-day existence. Computation, storage, and communication abilities of smartphones, for example, have undergone monumental changes over the past decade. However, global emphasis on creating and sustaining green environments is leading to a rapid and ongoing proliferation of edge computing systems and applications. As a broad spectrum of healthcare, home, and transport applications shift to the edge of the network, near-threshold computing (NTC) is emerging as one of the promising low-power computing platforms. An NTC device sets its supply voltage close to its threshold voltage, dramatically reducing the energy consumption. Despite showing substantial promise in terms of energy efficiency, NTC is yet to see widescale commercial adoption. This is because circuits and systems operating with NTC suffer from several problems, including increased sensitivity to process variation, reliability problems, performance degradation, and security vulnerabilities, to name a few. To realize its potential, we need designs, techniques, and solutions to overcome these challenges associated with NTC circuits and systems. The readers of this book will be able to familiarize themselves with recent advances in electronics systems, focusing on near-threshold computing

Random and Adversarial Bit Error Robustness: {E}nergy-Efficient and Secure {DNN} Accelerators

Deep neural network (DNN) accelerators received considerable attention in recent years due to the potential to save energy compared to mainstream hardware. Low-voltage operation of DNN accelerators allows to further reduce energy consumption significantly, however, causes bit-level failures in the memory storing the quantized DNN weights. Furthermore, DNN accelerators have been shown to be vulnerable to adversarial attacks on voltage controllers or individual bits. In this paper, we show that a combination of robust fixed-point quantization, weight clipping, as well as random bit error training (RandBET) or adversarial bit error training (AdvBET) improves robustness against random or adversarial bit errors in quantized DNN weights significantly. This leads not only to high energy savings for low-voltage operation as well as low-precision quantization, but also improves security of DNN accelerators. Our approach generalizes across operating voltages and accelerators, as demonstrated on bit errors from profiled SRAM arrays, and achieves robustness against both targeted and untargeted bit-level attacks. Without losing more than 0.8%/2% in test accuracy, we can reduce energy consumption on CIFAR10 by 20%/30% for 8/4-bit quantization using RandBET. Allowing up to 320 adversarial bit errors, AdvBET reduces test error from above 90% (chance level) to 26.22% on CIFAR10

MANAGING AND LEVERAGING VARIATIONS AND NOISE IN NANOMETER CMOS

Advanced CMOS technologies have enabled high density designs at the cost of complex fabrication process. Variation in oxide thickness and Random Dopant Fluctuation (RDF) lead to variation in transistor threshold voltage Vth. Current photo-lithography process used for printing decreasing critical dimensions result in variation in transistor channel length and width. A related challenge in nanometer CMOS is that of on-chip random noise. With decreasing threshold voltage and operating voltage; and increasing operating temperature, CMOS devices are more sensitive to random on-chip noise in advanced technologies. In this thesis, we explore novel circuit techniques to manage the impact of process variation in nanometer CMOS technologies. We also analyze the impact of on-chip noise on CMOS circuits and propose techniques to leverage or manage impact of noise based on the application. True Random Number Generator (TRNG) is an interesting cryptographic primitive that leverages on-chip noise to generate random bits; however, it is highly sensitive to process variation. We explore novel metastability circuits to alleviate the impact of variations and at the same time leverage on-chip noise sources like Random Thermal Noise and Random Telegraph Noise (RTN) to generate high quality random bits. We develop stochastic models for metastability based TRNG circuits to analyze the impact of variation and noise. The stochastic models are used to analyze and compare low power, energy efficient and lightweight post-processing techniques targeted to low power applications like System on Chip (SoC) and RFID. We also propose variation aware circuit calibration techniques to increase reliability. We extended this technique to a more generic application of designing Post-Si Tunable (PST) clock buffers to increase parametric yield in the presence of process variation. Apart from one time variation due to fabrication process, transistors undergo constant change in threshold voltage due to aging/wear-out effects and RTN. Process variation affects conventional sensors and introduces inaccuracies during measurement. We present a lightweight wear-out sensor that is tolerant to process variation and provides a fine grained wear-out sensing. A similar circuit is designed to sense fluctuation in transistor threshold voltage due to RTN. Although thermal noise and RTN are leveraged in applications like TRNG, they affect the stability of sensitive circuits like Static Random Access Memory (SRAM). We analyze the impact of on-chip noise on Bit Error Rate (BER) and post-Si test coverage of SRAM cells

정적 램 및 파워 게이트 회로에 대한 전압 및 보존용 공간 할당 문제

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2021.8. 김태환.칩의 저전력 동작은 중요한 문제이며, 공정이 발전하면서 그 중요성은 점점 커지고 있다. 본 논문은 칩을 구성하는 정적 램(SRAM) 및 로직(logic) 각각에 대해서 저전력으로 동작시키는 방법론을 논한다. 우선, 본 논문에서는 칩을 문턱 전압 근처의 전압(NTV)에서 동작시키고자 할 때 모니터링 회로의 측정을 통해 칩 내의 모든 SRAM 블록에서 동작 실패가 발생하지 않는 최소 동작 전압을 추론하는 방법론을 제안한다. 칩을 NTV 영역에서 동작시키는 것은 에너지 효율성을 증대시킬 수 있는 매우 효과적인 방법 중 하나이지만 SRAM의 경우 동작 실패 때문에 동작 전압을 낮추기 어렵다. 하지만 칩마다 영향을 받는 공정 변이가 다르므로 최소 동작 전압은 칩마다 다르며, 모니터링을 통해 이를 추론해낼 수 있다면 칩별로 SRAM에 서로 다른 전압을 인가해 에너지 효율성을 높일 수 있다. 본 논문에서는 다음과 같은 과정을 통해 이 문제를 해결한다: (1) 디자인 인프라 설계 단계에서는 SRAM의 최소 동작 전압을 추론하고 칩 생산 단계에서는 SRAM 모니터의 측정을 통해 전압을 인가하는 방법론을 제안한다; (2) 칩의 SRAM 비트셀(bitcell)과 주변 회로를 포함한 SRAM 블록들의 공정 변이를 모니터링할 수 있는 SRAM 모니터와 SRAM 모니터에서 모니터링할 대상을 정의한다; (3) SRAM 모니터의 측정값을 이용해 같은 칩에 존재하는 모든 SRAM 블록에서 목표 신뢰수준 내에서 읽기, 쓰기, 및 접근 동작 실패가 발생하지 않는 최소 동작 전압을 추론한다. 벤치마크 회로의 실험 결과는 본 논문에서 제안한 방법을 따라 칩별로 SRAM 블록들의 최소 동작 전압을 다르게 인가할 경우, 기존 방법대로 모든 칩에 동일한 전압을 인가하는 것 대비 수율은 같은 수준으로 유지하면서 SRAM 비트셀 배열의 전력 소모를 감소시킬 수 있음을 보인다. 두 번째로, 본 논문에서는 파워 게이트 회로에서 기존의 보존용 공간 할당 방법들이 지니고 있는 문제를 해결하고 누설 전력 소모를 더 줄일 수 있는 방법론을 제안한다. 기존의 보존용 공간 할당 방법은 멀티플렉서 피드백 루프가 있는 모든 플립플롭에는 무조건 보존용 공간을 할당해야 해야 하기 때문에 다중 비트 보존용 공간의 장점을 충분히 살리지 못하는 문제가 있다. 본 논문에서는 다음과 같은 방법을 통해 보존용 공간을 최소화하는 문제를 해결한다: (1) 보존용 공간 할당 과정에서 멀티플렉서 피드백 루프를 무시할 수 있는 조건을 제시하고, (2) 해당 조건을 이용해 멀티플렉서 피드백 루프가 있는 플립플롭이 많이 존재하는 회로에서 보존용 공간을 최소화한다; (3) 추가로, 플립플롭에 이미 할당된 보존용 공간 중 일부를 제거할 수 있는 조건을 찾고, 이를 이용해 보존용 공간을 더 감소시킨다. 벤치마크 회로의 실험 결과는 본 논문에서 제안한 방법론이 기존의 보존용 공간 할당 방법론보다 더 적은 보존용 공간을 할당하며, 따라서 칩의 면적 및 전력 소모를 감소시킬 수 있음을 보인다.Low power operation of a chip is an important issue, and its importance is increasing as the process technology advances. This dissertation addresses the methodology of operating at low power for each of the SRAM and logic constituting the chip. Firstly, we propose a methodology to infer the minimum operating voltage at which SRAM failure does not occur in all SRAM blocks in the chip operating on near threshold voltage (NTV) regime through the measurement of a monitoring circuit. Operating the chip on NTV regime is one of the most effective ways to increase energy efficiency, but in case of SRAM, it is difficult to lower the operating voltage because of SRAM failure. However, since the process variation on each chip is different, the minimum operating voltage is also different for each chip. If it is possible to infer the minimum operating voltage of SRAM blocks of each chip through monitoring, energy efficiency can be increased by applying different voltage. In this dissertation, we propose a new methodology of resolving this problem. Specifically, (1) we propose to infer minimum operation voltage of SRAM in design infra development phase, and assign the voltage using measurement of SRAM monitor in silicon production phase; (2) we define a SRAM monitor and features to be monitored that can monitor process variation on SRAM blocks including SRAM bitcell and peripheral circuits; (3) we propose a new methodology of inferring minimum operating voltage of SRAM blocks in a chip that does not cause read, write, and access failures under a target confidence level. Through experiments with benchmark circuits, it is confirmed that applying different voltage to SRAM blocks in each chip that inferred by our proposed methodology can save overall power consumption of SRAM bitcell array compared to applying same voltage to SRAM blocks in all chips, while meeting the same yield target. Secondly, we propose a methodology to resolve the problem of the conventional retention storage allocation methods and thereby further reduce leakage power consumption of power gated circuit. Conventional retention storage allocation methods have problem of not fully utilizing the advantage of multi-bit retention storage because of the unavoidable allocation of retention storage on flip-flops with mux-feedback loop. In this dissertation, we propose a new methodology of breaking the bottleneck of minimizing the state retention storage. Specifically, (1) we find a condition that mux-feedback loop can be disregarded during the retention storage allocation; (2) utilizing the condition, we minimize the retention storage of circuits that contain many flip-flops with mux-feedback loop; (3) we find a condition to remove some of the retention storage already allocated to each of flip-flops and propose to further reduce the retention storage. Through experiments with benchmark circuits, it is confirmed that our proposed methodology allocates less retention storage compared to the state-of-the-art methods, occupying less cell area and consuming less power.1 Introduction 1 1.1 Low Voltage SRAM Monitoring Methodology 1 1.2 Retention Storage Allocation on Power Gated Circuit 5 1.3 Contributions of this Dissertation 8 2 SRAM On-Chip Monitoring Methodology for High Yield and Energy Efficient Memory Operation at Near Threshold Voltage 13 2.1 SRAM Failures 13 2.1.1 Read Failure 13 2.1.2 Write Failure 15 2.1.3 Access Failure 16 2.1.4 Hold Failure 16 2.2 SRAM On-chip Monitoring Methodology: Bitcell Variation 18 2.2.1 Overall Flow 18 2.2.2 SRAM Monitor and Monitoring Target 18 2.2.3 Vfail to Vddmin Inference 22 2.3 SRAM On-chip Monitoring Methodology: Peripheral Circuit IR Drop and Variation 29 2.3.1 Consideration of IR Drop 29 2.3.2 Consideration of Peripheral Circuit Variation 30 2.3.3 Vddmin Prediction including Access Failure Prohibition 33 2.4 Experimental Results 41 2.4.1 Vddmin Considering Read and Write Failures 42 2.4.2 Vddmin Considering Read/Write and Access Failures 45 2.4.3 Observation for Practical Use 45 3 Allocation of Always-On State Retention Storage for Power Gated Circuits - Steady State Driven Approach 49 3.1 Motivations and Analysis 49 3.1.1 Impact of Self-loop on Power Gating 49 3.1.2 Circuit Behavior Before Sleeping 52 3.1.3 Wakeup Latency vs. Retention Storage 54 3.2 Steady State Driven Retention Storage Allocation 56 3.2.1 Extracting Steady State Self-loop FFs 57 3.2.2 Allocating State Retention Storage 59 3.2.3 Designing and Optimizing Steady State Monitoring Logic 59 3.2.4 Analysis of the Impact of Steady State Monitoring Time on the Standby Power 63 3.3 Retention Storage Refinement Utilizing Steadiness 65 3.3.1 Extracting Flip-flops for Retention Storage Refinement 66 3.3.2 Designing State Monitoring Logic and Control Signals 68 3.4 Experimental Results 73 3.4.1 Comparison of State Retention Storage 75 3.4.2 Comparison of Power Consumption 79 3.4.3 Impact on Circuit Performance 82 3.4.4 Support for Immediate Power Gating 83 4 Conclusions 89 4.1 Chapter 2 89 4.2 Chapter 3 90박

Methodologies for Accelerated Analysis of the Reliability and the Energy Efficiency Levels of Modern Microprocessor Architectures

Η εξέλιξη της τεχνολογίας ημιαγωγών, της αρχιτεκτονικής υπολογιστών και της σχεδίασης οδηγεί σε αύξηση της απόδοσης των σύγχρονων μικροεπεξεργαστών, η οποία επίσης συνοδεύεται από αύξηση της ευπάθειας των προϊόντων. Οι σχεδιαστές εφαρμόζουν διάφορες τεχνικές κατά τη διάρκεια της ζωής των ολοκληρωμένων κυκλωμάτων με σκοπό να διασφαλίσουν τα υψηλά επίπεδα αξιοπιστίας των παραγόμενων προϊόντων και να τα προστατέψουν από διάφορες κατηγορίες σφαλμάτων διασφαλίζοντας την ορθή λειτουργία τους. Αυτή η διδακτορική διατριβή προτείνει καινούριες μεθόδους για να διασφαλίσει τα υψηλά επίπεδα αξιοπιστίας και ενεργειακής απόδοσης των σύγχρονων μικροεπεξεργαστών οι οποίες μπορούν να εφαρμοστούν κατά τη διάρκεια του πρώιμου σχεδιαστικού σταδίου, του σταδίου παραγωγής ή του σταδίου της κυκλοφορίας των ολοκληρωμένων κυκλωμάτων στην αγορά. Οι συνεισφορές αυτής της διατριβής μπορούν να ομαδοποιηθούν στις ακόλουθες δύο κατηγορίες σύμφωνα με το στάδιο της ζωής των μικροεπεξεργαστών στο οποίο εφαρμόζονται: • Πρώιμο σχεδιαστικό στάδιο: Η στατιστική εισαγωγή σφαλμάτων σε δομές που είναι μοντελοποιημένες σε προσομοιωτές οι οποίοι στοχεύουν στην μελέτη της απόδοσης είναι μια επιστημονικά καθιερωμένη μέθοδος για την ακριβή μέτρηση της αξιοπιστίας, αλλά υστερεί στον αργό χρόνο εκτέλεσης. Σε αυτή τη διατριβή, αρχικά παρουσιάζουμε ένα νέο πλήρως αυτοματοποιημένο εργαλείο εισαγωγής σφαλμάτων σε μικροαρχιτεκτονικό επίπεδο που στοχεύει στην ακριβή αξιολόγηση της αξιοπιστίας ενός μεγάλου πλήθους μονάδων υλικού σε σχέση με διάφορα μοντέλα σφαλμάτων (παροδικά, διακοπτόμενα, μόνιμα σφάλματα). Στη συνέχεια, χρησιμοποιώντας το ίδιο εργαλείο και στοχεύοντας τα παροδικά σφάλματα, παρουσιάζουμε διάφορες μελέτες σχετιζόμενες με την αξιοπιστία και την απόδοση, οι οποίες μπορούν να βοηθήσουν τις σχεδιαστικές αποφάσεις στα πρώιμα στάδια της ζωής των επεξεργαστών. Τελικά, προτείνουμε δύο μεθοδολογίες για να επιταχύνουμε τα μαζικά πειράματα στατιστικής εισαγωγής σφαλμάτων. Στην πρώτη, επιταχύνουμε τα πειράματα έπειτα από την πραγματική εισαγωγή των σφαλμάτων στις δομές του υλικού. Στη δεύτερη, επιταχύνουμε ακόμη περισσότερο τα πειράματα προτείνοντας τη μεθοδολογία με όνομα MeRLiN, η οποία βασίζεται στη μείωση της αρχικής λίστας σφαλμάτων μέσω της ομαδοποίησής τους σε ισοδύναμες ομάδες έπειτα από κατηγοριοποίηση σύμφωνα με την εντολή που τελικά προσπελαύνει τη δομή που φέρει το σφάλμα. • Παραγωγικό στάδιο και στάδιο κυκλοφορίας στην αγορά: Οι συνεισφορές αυτής της διδακτορικής διατριβής σε αυτά τα στάδια της ζωής των μικροεπεξεργαστών καλύπτουν δύο σημαντικά επιστημονικά πεδία. Αρχικά, χρησιμοποιώντας το ολοκληρωμένο κύκλωμα των 48 πυρήνων με ονομασία Intel SCC, προτείνουμε μια τεχνική επιτάχυνσης του εντοπισμού μονίμων σφαλμάτων που εφαρμόζεται κατά τη διάρκεια λειτουργίας αρχιτεκτονικών με πολλούς πυρήνες, η οποία εκμεταλλεύεται το δίκτυο υψηλής ταχύτητας μεταφοράς μηνυμάτων που διατίθεται στα ολοκληρωμένα κυκλώματα αυτού του είδους. Δεύτερον, προτείνουμε μια λεπτομερή στατιστική μεθοδολογία με σκοπό την ακριβή πρόβλεψη σε επίπεδο συστήματος των ασφαλών ορίων λειτουργίας της τάσης των πυρήνων τύπου ARMv8 που βρίσκονται πάνω στη CPU X-Gene 2.The evolution in semiconductor manufacturing technology, computer architecture and design leads to increase in performance of modern microprocessors, which is also accompanied by increase in products’ vulnerability to errors. Designers apply different techniques throughout microprocessors life-time in order to ensure the high reliability requirements of the delivered products that are defined as their ability to avoid service failures that are more frequent and more severe than is acceptable. This thesis proposes novel methods to guarantee the high reliability and energy efficiency requirements of modern microprocessors that can be applied during the early design phase, the manufacturing phase or after the chips release to the market. The contributions of this thesis can be grouped in the two following categories according to the phase of the CPUs lifecycle that are applied at: • Early design phase: Statistical fault injection using microarchitectural structures modeled in performance simulators is a state-of-the-art method to accurately measure the reliability, but suffers from low simulation throughput. In this thesis, we firstly present a novel fully-automated versatile microarchitecture-level fault injection framework (called MaFIN) for accurate characterization of a wide range of hardware components of an x86-64 microarchitecture with respect to various fault models (transient, intermittent, permanent faults). Next, using the same tool and focusing on transient faults, we present several reliability and performance related studies that can assist design decision in the early design phases. Moreover, we propose two methodologies to accelerate the statistical fault injection campaigns. In the first one, we accelerate the fault injection campaigns after the actual injection of the faults in the simulated hardware structures. In the second, we further accelerate the microarchitecture level fault injection campaigns by proposing MeRLiN a fault pre-processing methodology that is based on the pruning of the initial fault list by grouping the faults in equivalent classes according to the instruction access patterns to hardware entries. • Manufacturing phase and release to the market: The contributions of this thesis in these phases of microprocessors life-cycle cover two important aspects. Firstly, using the 48-core Intel’s SCC architecture, we propose a technique to accelerate online error detection of permanent faults for many-core architectures by exploiting their high-speed message passing on-chip network. Secondly, we propose a comprehensive statistical analysis methodology to accurately predict at the system level the safe voltage operation margins of the ARMv8 cores of the X- Gene 2 chip when it operates in scaled voltage conditions

Intelligent Circuits and Systems

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society.　 This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering