36,075 research outputs found
Single shot measurement of a silicon single electron transistor
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor
(CMOS) integrated circuit that has a higher measurement bandwidth compared with
conventional room temperature electronics. This allowed implementing single
shot operations and observe the real-time evolution of the current of a
phosphorous-doped silicon single electron transistor that was irradiated with a
microwave pulse. Relaxation times up to 90 us are observed, suggesting the
presence of well isolated electron excitations within the device. It is
expected that these are associated with long decoherence time and the device
may be suitable for quantum information processing
Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs
We employ a novel multi-configurational self-consistent Green's function
approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect
transistors. This approach allows to calculate the electronic transport with a
seamless transition from the single-electron regime to room temperature
field-effect transistor operation. The particular improvement of the MCSCG
stems from a division of the channel system into a small subsystem of
resonantly trapped states for which a many-body Fock space becomes feasible and
a strongly coupled rest which can be treated adequately on a conventional
mean-field level. The Fock space description allows for the calculation of
few-electron Coulomb charging effects beyond mean-field.
We compare a conventional Hartree non-equilibrium Green's function
calculation with the results of the MCSCG approach. Using the MCSCG method
Coulomb blockade effects are demonstrated at low temperatures while under
strong nonequilibrium and room temperature conditions the Hartree approximation
is retained
Graphene-porphyrin single-molecule transistors
We demonstrate a robust graphene-molecule-graphene transistor architecture. We observe remarkably reproducible single electron charging, which we attribute to insensitivity of the molecular junction to the atomic configuration of the graphene electrodes. The stability of the graphene electrodes allow for high-bias transport spectroscopy and the observation of multiple redox states at room-temperature
Room temperature operational single electron transistor fabricated by focused ion beam deposition
We present the fabrication and room temperature operation of single electron transistors using 8nm8nmtungsten islands deposited by focused ion beamdeposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF0.499aF, giving a charging energy of 160.6meV160.6meV
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