Low-pressure, chemical vapor deposition polysilicon

The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system

Atmospheric Pressure Chemical Vapor Deposition of Graphene

Recently, graphene has gained significant interest owing to its outstanding conductivity, mechanical strength, thermal stability, etc. Among various graphene synthesis methods, atmospheric pressure chemical vapor deposition (APCVD) is one of the best syntheses due to very low diffusivity coefficient and a critical step for graphene-based device fabrication. High-temperature APCVD processes for thin film productions are being recognized in many diversity technologies such as solid state electronic devices, in particular, high quality epitaxial semiconductor films for silicon bipolar and metal oxide semiconductor (MOS) transistors. Graphene-based devices exhibit high potential for applications in flexible electronics, optoelectronics, and energy harvesting. In this chapter, recent advances of APCVD-based graphene synthesis and their related applications will be addressed

Growth of Vertically Aligned ZnO Nanowires on Iron Oxide Layer

A low cost and substrate-independent method has been established to synthesize vertically aligned ZnO nanowires (NWs) on iron oxide films coated silicon substrates via low pressure Chemical Vapor Deposition (CVD) method at 650oC

Multi-scale modelling of silicon nanocrystal synthesis by Low Pressure Chemical Vapor Deposition.

A multi-scale model has been developed in order to represent the nucleation and growth phenomena taking place during silicon nanocrystal (NC) synthesis on SiO2 substrates by Low Pressure Chemical Vapor Deposition from pure silane SiH4. Intrinsic sticking coefficients and H2 desorption kinetic parameters were established by ab initio modelling for the first three stages of silicon chemisorption on SiO2 sites, i.e. silanol Si―OH bonds and siloxane Si―O―Si bridges. This ab initio study has revealed that silane cannot directly chemisorb on SiO2 sites, the first silicon chemisorption proceeds from homogeneously born unsaturated species like silylene SiH2. These kinetic data were implemented into the Computational Fluid Dynamics Fluent code at the industrial reactor scale, by activating its system of surface site control in transient conditions. NC area densities and radii deduced from Fluent calculations were validated by comparison with experimental data. Information about the deposition mechanisms was then obtained. In particular, hydrogen desorption has been identified as the main limiting step of NC nucleation and growth, and the NC growth rate highly increases with run duration due to the autocatalytic nature of deposition

Synthesis diamond films from low pressure chemical vapor deposition

Experiments were performed on the deposition of both diamond crystals and films from hydrogen and methane gas mixtures on silicon and polymer substrates by various plasma enhanced chemical vapor deposition techniques (PECVD) . Microwave, arc, and dc plasmas to assist the deposition of the diamond metastable phase of carbon were used. Discussed in the following thesis are the plasma configurations used together with experimental parameters such as gas composition, flow rate, chamber pressure, and power. The crystallinity of the films, which can be controlled and changed from polycrystalline to amorphous, was ascertained by scanning electron microscopy (SEM) . Other characterization techniques employed were profilometry to indicate uniformity, depth profiles and growth rates, and Raman spectroscopy which depicted chemical structure

Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates

Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent

Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition

The time evolution of self-assembled Ge islands, during low-pressure chemical vapor deposition (LPCVD) of Ge on Si at 650 Deg C using high growth rates, has been investigated by atomic force microscopy, transmission electron microscopy, and Rutherford backscattering spectrometry. We have found three different island structures The smallest islands are "lens-shaped" and characterized by a rather narrow size distribution, ~4nm high and ~20nm wide. Next to form are a distinct population of multifaceted "dome shaped" islands, up to 25nm high and 80-150 nm wide. Finally, the largest islands that form are square-based truncated pyramids with a very narrow size distribution ~50nm high and ~250nm wide. The pyramidal islands normally seen in the intermediate size range (~150nm) are not observed. The small lens-shaped islands appear to be defect free, while some of the multifaceted islands as well as all the large truncated pyramids contain misfit dislocations. The existence of multifaceted islands, in the size range where multifaceted "dome shaped" islands have previously been reported, is attributed to the high growth rate used. Furthermore, under the growth conditions used, the truncated-pyramid-shaped islands are characterized by a very narrow size distribution

Fabrication of high frequency nanometer scale mechanical resonators from bulk Si crystals

We report on a method to fabricate nanometer scale mechanical structures from bulk, single-crystal Si substrates. A technique developed previously required more complex fabrication methods and an undercut step using wet chemical processing. Our method does not require low pressure chemical vapor deposition of intermediate masking layers, and the final step in the processing uses a dry etch technique, avoiding the difficulties encountered from surface tension effects when wet processing mechanically delicate or large aspect ratio structures. Using this technique, we demonstrate fabrication of a mechanical resonator with a fundamental resonance frequency of 70.72 MHz and a quality factor of 2 x 10^(4)

Low pressure chemical vapor deposition of polysilicon

The low pressure chemical vapor deposition of polycrystalline silicon was studied to define the controlling process parameters and the requirements for commercial implementation. Silane and silane-nitrogen mixtures were utilized as source gases in a tubular reactor containing parallel disk substrates oriented with surface normals in the direction of flow. The results of the study showed that the deposition reaction is surface kinetic reaction controlled over the range of temperature studied, 600 to 700/sup 0/C, that the reaction is first order with respect to silane, and with an activation energy of 1.33 x 10/sup 5/ J/g mole. A gradient in temperature along the reactor tube is sufficient to compensate for reactant depletion and to produce a uniform deposition rate