Selected Papers from 2020 IEEE International Conference on High Voltage Engineering (ICHVE 2020)

The 2020 IEEE International Conference on High Voltage Engineering (ICHVE 2020) was held on 6–10 September 2020 in Beijing, China. The conference was organized by the Tsinghua University, China, and endorsed by the IEEE Dielectrics and Electrical Insulation Society. This conference has attracted a great deal of attention from researchers around the world in the field of high voltage engineering. The forum offered the opportunity to present the latest developments and different emerging challenges in high voltage engineering, including the topics of ultra-high voltage, smart grids, and insulating materials

Ionization in atmospheres of brown dwarfs and extrasolar planets III. Breakdown conditions for mineral clouds

Electric discharges were detected directly in the cloudy atmospheres of Earth, Jupiter, and Saturn, are debatable for Venus, and indirectly inferred for Neptune and Uranus in our solar system. Sprites (and other types of transient luminous events) have been detected only on Earth, and are theoretically predicted for Jupiter, Saturn, and Venus. Cloud formation is a common phenomenon in ultra-cool atmospheres such as in brown dwarf and extrasolar planetary atmospheres. Cloud particles can be expected to carry considerable charges which may trigger discharge events via small-scale processes between individual cloud particles (intra-cloud discharges) or large-scale processes between clouds (inter-cloud discharges). We investigate electrostatic breakdown characteristics, like critical field strengths and critical charge densities per surface, to demonstrate under which conditions mineral clouds undergo electric discharge events which may trigger or be responsible for sporadic X-ray emission. We apply results from our kinetic dust cloud formation model that is part of the Drift-Phoenix model atmosphere simulations. We present a first investigation of the dependence of the breakdown conditions in brown dwarf and giant gas exoplanets on the local gas-phase chemistry, the effective temperature, and primordial gas-phase metallicity. Our results suggest that different intra-cloud discharge processes dominate at different heights inside mineral clouds: local coronal (point discharges) and small-scale sparks at the bottom region of the cloud where the gas density is high, and flow discharges and large-scale sparks near, and maybe above, the cloud top. The comparison of the thermal degree of ionization and the number density of cloud particles allows us to suggest the efficiency with which discharges will occur in planetary atmospheres.Publisher PDFPeer reviewe

SiC Schottky diode electrothermal macromodel

This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.Postprint (published version

Evaluation of 4h-Sic Photoconductive Switches for Pulsed Power Applications Based on Numerical Simulations

Since the early studies by Auston, photoconductive semiconductor switches (PCSSs) have been investigated intensively for many applications owing to their unique advantages over conventional gas and mechanical switches. These advantages include high speeds, fast rise times, optical isolation, compact geometry, and negligible jitter. Another important requirement is the ability to operate at high repetition rates with long device lifetimes (i.e., good reliability without degradation). Photoconductive semiconductor switches (PCSSs) are low-jitter compact alternatives to traditional gas switches in pulsed power systems. The physical properties of Silicon Carbide (SiC), such as a large bandgap (3.1-3.35 eV), high avalanche breakdown field (~3 MV/cm), and large thermal conductivity (4-5 W/cm-K) with superior radiation hardness and resistance to chemical attack, make SiC an attractive candidate for high voltage, high temperature, and high power device applications. A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC was carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, were comprehensively included. Results of our model matched the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters were also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples could be discounted up to applied fields as high as 275 kV/cm. In addition, calculations of electric field distributions in a SiC photoconductive semiconductor switch structure with metal contacts employing contact extensions on a high-k HfO2 dielectric were carried out, with the goal of assessing reductions in the peak electric fields. For completeness, analysis of thermal heating in a lateral PCSS structure with such modified geometries after photoexcitation was also included. The simulation results of the electric field distribution show that peak electric fields, and hence the potential for device failure, can be mitigated by these strategies. A combination of the two approaches was shown to produce up to a ~67% reduction in peak fields. The reduced values were well below the threshold for breakdown in SiC material using biasing close to experimental reports. The field mitigation was shown to depend on the length of the metal overhang. Further, the calculations show that, upon field mitigation, the internal temperature rise would also be controlled. A maximum value of 980 K was obtained here for an 8 ns electrical pulse at a 20 kV external bias, which is well below the limits for generating local stress or cracks or defects