Random telegraph signals in charge coupled devices

An investigation of fluctuating pixels resulting from proton irradiation of an E2V Technologies CCD47-20 device is presented. The device structure,experimental set up and irradiation methodology are described, followed by a detailed analysis of radiation induced random telegraph signals,RTS. The characteristics of the observed flickering pixels are discussed in detail and the proposed models explaining the mechanism behind the phenomena are viewed in light of the collected data

Effects of radiation on charge-coupled devices

The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used

Push clocks: a new approach to charge-coupled devices clocking

A new approach to charge-coupled device clocking has been developed—dynamic push clocks. With dynamic push clocks, the charge is transferred by pushing it from one storage site to another. The push clock approach results in a larger signal dynamic range, larger signal-to-noise ratio, and better performance at both high and low frequencies

Bayesian photon counting with electron-multiplying charge coupled devices (EMCCDs)

The EMCCD is a CCD type that delivers fast readout and negligible detector noise, making it an ideal detector for high frame rate applications. Because of the very low detector noise, this detector can potentially count single photons. Considering that an EMCCD has a limited dynamical range and negligible detector noise, one would typically apply an EMCCD in such a way that multiple images of the same object are available, for instance, in so called lucky imaging. The problem of counting photons can then conveniently be viewed as statistical inference of flux or photon rates, based on a stack of images. A simple probabilistic model for the output of an EMCCD is developed. Based on this model and the prior knowledge that photons are Poisson distributed, we derive two methods for estimating the most probable flux per pixel, one based on thresholding, and another based on full Bayesian inference. We find that it is indeed possible to derive such expressions, and tests of these methods show that estimating fluxes with only shot noise is possible, up to fluxes of about one photon per pixel per readout.Comment: Fixed a few typos compared to the published versio

Sub-electron noise charge-coupled devices

A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed

Radiation damage in charge coupled devices

This thesis was submitted for the degree of Doctor of Philosophy and awarded by the University of Leicester.This thesis is concerned with the effects of radiation damage in CCDs used for space applications. The manufacturing process and operational principles of CCDs are presented in Chapter 2. The space radiation environment, the two radiation damage mechanisms relevant to CCDs, and the effects of radiation on the operational characteristics of CCDs are described in Chapter 3. Chapter 4 presents a study to assess the suitability of novel low light level L3Vision CCD technology to applications in space. Two L3Vision CCDs were subjected to proton irradiations representative of doses expected to be received by spacecraft in low Earth orbit. Post-irradiation the devices were found to operate as expected, the effects of radiation on the operational characteristics of the devices being comparable to previous studies. The effect of low energy protons on CCDs is the subject of Chapter 5. The study was initiated in response to the finding that soft protons could be focused by the mirror modules of the XMM-Newton spacecraft onto the EPIC CCD detectors. Two EPIC devices were irradiated with protons of a few keV to find that soft protons cause more damage than that expected by the Non-Ionising Energy Loss damage relationship, as they deposit most of their energy within the CCD. The observed change in CTI of the EPIC devices on XMM-Newton is however comparable to the pre-launch prediction, and the component attributable to low energy protons is small, <20 %. Chapter 6 presents a study of a specific radiation induced phenomenon, ‘Random Telegraph Signals’. Development of analysis software and the irradiation of two CCDs are discussed before a detailed characterisation of the generated RTS pixels is presented. The study shows that the mechanism behind RTS involves a bi-stable defect linked with the E-centre, in combination with the high field regions of a CCD pixel

Evidence for self-interaction of charge distribution in charge-coupled devices

Charge-coupled devices (CCDs) are widely used in astronomy to carry out a variety of measurements, such as for flux or shape of astrophysical objects. The data reduction procedures almost always assume that ther esponse of a given pixel to illumination is independent of the content of the neighboring pixels. We show evidence that this simple picture is not exact for several CCD sensors. Namely, we provide evidence that localized distributions of charges (resulting from star illumination or laboratory luminous spots) tend to broaden linearly with increasing brightness by up to a few percent over the whole dynamic range. We propose a physical explanation for this "brighter-fatter" effect, which implies that flatfields do not exactly follow Poisson statistics: the variance of flatfields grows less rapidly than their average, and neighboring pixels show covariances, which increase similarly to the square of the flatfield average. These covariances decay rapidly with pixel separation. We observe the expected departure from Poisson statistics of flatfields on CCD devices and show that the observed effects are compatible with Coulomb forces induced by stored charges that deflect forthcoming charges. We extract the strength of the deflections from the correlations of flatfield images and derive the evolution of star shapes with increasing flux. We show for three types of sensors that within statistical uncertainties,our proposed method properly bridges statistical properties of flatfields and the brighter-fatter effect

Performance of single photon-counting X-ray charge coupled devices

Results of intial performance tests on X-ray sensing properties of charge-coupled devices (CCDs) are presented. CCDs have demonstrated excellent spatial resolution and good spectral resolution, superior to that of non-imaging proportional counters

Overlapping-gate buried-channel charge-coupled devices

In this letter the advantages of the overlapping-gate buried-channel charged-coupled devices over the 3-phase metal-gate and resistive-gate buried-channel c.c.d. are discussed and pertinent design considerations for the overlapping-gate c.c.d.s are presented