THE KIDS WERE ALT-RIGHT: RADICAL RIGHT YOUTH ACTIVISM AND THE ORIGINS OF THE WHITE POWER MOVEMENT, 1960-1980

This dissertation explores the young people—primarily young men—involved and weaponized within the radical racist Right during the 1960s and 1970s in the United States. This project argues that young people were an active bedrock of support within racist and antisemitic organizations such as the American Nazi Party, the National Alliance, the Knights of the Ku Klux Klan, and others, and created a unique coalition that ultimately developed into a revolutionary racist Right and eventual white power movement by the 1980s. This dissertation makes a significant intervention in scholarship on the radical Right’s development over the past sixty years and serves as a historical foundation and origin for the youth-driven and internet dwelling alt-right and right-wing militias in the twenty-first century. This project reorients the scholarly lens of the genesis of the white power movement to decades prior to the militia movements of the 1980s, in dialogue with the social movements of the New Left and with attention to American youth as drivers of the movement. This analysis purposefully uses radical racist Right instead of far Right to describe a political identity based in a racist and antisemitic movement to dismantle liberal democracy, and demonstrates how youth involvement within the radical racist Right made up a significant counterculture movement of their own. The Kids Were Alt-Right argues that youth activism within the radical racist Right began—in part—as a cooptation to leftist social movement organizations such as the Student Nonviolent Coordinating Committee (SNCC) and Students for a Democratic Society (SDS), reappropriated leftist movement methods, organizational framework, and political language, but eventually metastasized as a unique revolutionary coalition. The deployment of youth culture by adult leadership, detailed primarily as racist jokes and humor, produced a unique youth identity that gravitated young people to these organizations. By the 1970s, the youth identity embraced a politics of violent rebellion and the youth dominated radical racist Right transitioned into the revolutionary racist Right. Using personal correspondence, organizational publications, newspapers, and extensive files from the Federal Bureau of Investigation, this dissertation chronologically examines the youth involved within radical racist Right organizations and the adult leadership that incorporated and mobilized young people and a youth identity for their own political purposes. Beginning in 1960 with the formation of Young Americans for Freedom as a reactionary conservative student movement—and whose membership later moved towards more openly racist and antisemitic organizations, The Kids Were Alt-Right chronicles the youth and youth identities within the adult-led radical racist Right organizations like the American Nazi Party and the National Youth Alliance, the youth leadership in the 1970s revolutionary racist Right, and culminates in the paramilitary alliance that ignited in bloodshed at the Greensboro massacre in 1979 and the formation of a violent white power movement

Physical and Mechanical Properties of Copper and Copper Alloys

High strength, high conductivity copper alloys are prime candidates for high heat flux applications in fusion energy systems. This chapter reviews the physical and mechanical properties of pure copper and copper alloys with the focus on precipitation-hardened CuCrZr and dispersion-strengthened CuAl25 alloys. The effect of neutron irradiation on copper and copper alloys is reviewed in terms of radiation effects on physical properties and mechanical properties (tensile properties, fracture toughness, fatigue and creep-fatigue), irradiation creep and void swelling. The effect of irradiation on the microstructure of copper and copper alloys and dislocation channeling is also presented. Joining techniques for copper alloys in fusion plasma facing components are briefly discussed

Reflections From a Lifetime of Activism. An Interview with Chip Berlet

Chip Berlet is a widely published independent scholar who studies right-wing movements in the United States and Europe, as well as the global spread of conspiracy theories. He is an award-winning investigative journalist and photographer. Since the 1995 Oklahoma bombing, Berlet has appeared frequently in the media to discuss these issues. For over twenty years, Berlet was a senior analyst at Political Research Associates (PRA), a non-profit think tank in the United States that tracks right-wing networks. Berlet is co-author (with Matthew N. Lyons) of Right-Wing Populism in America: Too Close for Comfort (Guilford 2000) and more recently editor of Trumping Democracy: From Reagan to the Alt-Right (Routledge 2019). Despite a lack of a college degree, Berlet has served on the advisory board of the Journal of Totalitarian Movements and Political Religions (now Politics, Religion & Ideology); and the advisory board for the Center of Millennial Studies at Boston University. He also served for over twenty years on the board of predecessor groups of what is now the Defending Dissent Foundation. He is active in the American Sociological Association in the sections on Collective Behavior and Social Movements and Marxism. Berlet’s main website is at http://www.researchforprogress.us/

A threshold model for receptor tyrosine kinase signaling specificity and cell fate determination [version 1; referees: 4 approved]

Upon ligand engagement, the single-pass transmembrane receptor tyrosine kinases (RTKs) dimerize to transmit qualitatively and quantitatively different intracellular signals that alter the transcriptional landscape and thereby determine the cellular response. The molecular mechanisms underlying these fundamental events are not well understood. Considering recent insights into the structural biology of fibroblast growth factor signaling, we propose a threshold model for RTK signaling specificity in which quantitative differences in the strength/longevity of ligand-induced receptor dimers on the cell surface lead to quantitative differences in the phosphorylation of activation loop (A-loop) tyrosines as well as qualitative differences in the phosphorylation of tyrosines mediating substrate recruitment. In this model, quantitative differences on A-loop tyrosine phosphorylation result in gradations in kinase activation, leading to the generation of intracellular signals of varying amplitude/duration. In contrast, qualitative differences in the pattern of tyrosine phosphorylation on the receptor result in the recruitment/activation of distinct substrates/intracellular pathways. Commensurate with both the dynamics of the intracellular signal and the types of intracellular pathways activated, unique transcriptional signatures are established. Our model provides a framework for engineering clinically useful ligands that can tune receptor dimerization stability so as to bias the cellular transcriptome to achieve a desired cellular output

Enabling a Multi-Purpose High-Energy Neutron Source Based on High-Current Compact Cyclotrons

The current and future need for high-energy neutrons has been a subject of increasing discussion and concern. Immediate applications for such an intense neutron source include medical isotope production, high-energy physics (HEP) research, and for materials development and to support qualification for fission reactors. Also, and of the utmost importance, is the need for such a source to inform critical gaps in our understanding of the transmutation materials science issues facing fusion power reactors. A 14 MeV fusion prototypical neutron source (FPNS) has been a critical, yet unresolved need of the fusion program for more than 40 years. Given the narrowing timeline for construction of pilot and fusion power plants the urgency and necessity of such a neutron source has become increasingly time sensitive. One possibility to address this need is a scaled-down version of IFMIF technology ("IFMIF-Lite"), operating at 125 mA with the beam and target technology leveraging technology developed under the IFMIF/EVEDA program. Within this white paper, a blueprint of necessary R&D to enable a transformational change in both the capital and operating cost of this IFMIF-Lite driver concept is presented. Enabling this transformation is the replacement of the historic RFQ/LINAC components with multiple compact 35+ MeV D+ drivers, based on compact cyclotrons

Threshold irradiation dose for amorphization of silicon carbide

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si{sup +} at 1 x 10{sup -3} dpa/s and with fission neutrons irradiated at 1 x 10{sup -6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340{+-}10K

Threshold irradiation dose for amorphization of silicon carbide

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si{sup +} at 1 x 10{sup -3} dpa/s and with fission neutrons irradiated at 1 x 10{sup -6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340{+-}10K