Homiletics

Homiletics and Sermon Notes for the Ebenezer Festival Servic

Background problem in electron-energy-loss spectroscopy

At large scattering angle the background formation in electron-energy-loss spectroscopy is determined by elastic-inelastic scattering events. The suitability of the usual background fitting AE−r is critically investigated as a function of specimen thickness, collection angle, and width of energy window

Determination of the position maximum for electron Compton scattering in electron microscopy

We study electron Compton scattering with an electron microscope by means of a Castaing-Henry filter. In the electron-spectroscopic-diffraction mode the positions of the Compton maxima in the diffraction plane are determined. We find a nearly constant shift of this position with respect to the value given by E=q2/2. The intensity of Compton-scattered electrons does not peak at the scattering angle predicted by the binary collision mode. The energy dispersion of the Compton profile is well described by E=q2/2

Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well

We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed in a wide temperature range between 0.3 K and 60 K. The simplicity of our material system with a single sub-band occupation and free electron dispersion rules out most complicated mechanisms that could give rise to the observed LMR. At low temperature, quantum oscillations are superimposed onto the LMR. Both, the featureless LMR at high $T$ and the quantum oscillations at low $T$ follow the empirical resistance rule which states that the longitudinal conductance is directly related to the derivative of the transversal (Hall) conductance multiplied by the magnetic field and a constant factor $\alpha$ that remains unchanged over the entire temperature range. Only at low temperatures, small deviations from this resistance rule are observed beyond $\nu=1$ that likely originate from a different transport mechanism for the composite fermions

Constructive role of non-adiabaticity for quantized charge pumping

We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pumping, while in previous multi-parameter pumping schemes it caused unwanted and less controllable currents. In this paper we demonstrate experimentally the constructive and destructive role of non-adiabaticity by analysing the pumping current over a broad frequency range.Comment: Presented at ICPS 2010, July 25 - 30, Seoul, Kore

Fabrication of quantum point contacts by engraving GaAs/AlGaAs-heterostructures with a diamond tip

We use the all-diamond tip of an atomic force microscope for the direct engraving of high quality quantum point contacts in GaAs/AlGaAs-heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect free ballistic constrictions show well resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements.Comment: 3 pages, 3 figure

Magneto Seebeck effect in REFeAsO (RE=rare earth) compounds: probing the magnon drag scenario

We investigate Seebeck effect in REFeAsO (RE=rare earth)compounds as a function of temperature and magnetic field up to 30T. The Seebeck curves are characterized by a broad negative bump around 50K, which is sample dependent and strongly enhanced by the application of a magnetic field. A model for the temperature and field dependence of the magnon drag contribution to the Seebeck effect by antiferromagnetic (AFM) spin fluctuation is developed. It accounts for the magnitude and scaling properties of such bump feature in our experimental data. This analysis allows to extract precious information on the coupling between electrons and AFM spin fluctuations in these parent compound systems, with implications on the pairing mechanism of the related superconducting compounds

Quantum resistance metrology in graphene

We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$\Omega$ upto 2 $\mu$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$\mu$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied