Si-Based Electrodes for Potentiometric Measurements of Aqueous Solutions, Journal of Telecommunications and Information Technology, 2009, nr 4

Three sensors for chemical and physical examination of aqueous solutions were presented in the paper. An Au potentiometric electrode, an AgCl chlorine ion sensor and a p-n junction thermometer were developed. Their layout and internal structure were explained in the light of the manufacturing process. The device characteristics were measured in conditions corresponding to normal operation of the devices. Basic electrical parameters of the developed structures, as well as their sensitivity to environmental parameter variation were estimated

Electrical characterization of ISFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET)

Fabrication and properties of the field emission array with self-alignment gate electrode, Journal of Telecommunications and Information Technology, 2001, nr 1

A new method for the fabrication of field emission arrays (FEA) based on bulk/surface silicon micromachining and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in silicon by mean anisotropic etching in alkali solution of the front silicon film through micro holes opened in silicon oxide layer. The field emission of the fabricated emitter tips is enhanced by a diamond-like-carbon film formed by chemical vapor deposition on the microtips. Back side contacts are formed by metal patterning. Detailed Raman, Auger and TEM investigations of the deposited DLC films (nanocrystalline diamond smaller than 10 nm) will be presented. In this paper we discuss the problems related to the development of field emission arrays technology. We also demonstrate examples of devices fabricated according to those technologies

Prefabrykowane przęsła łukowe – dobre rozwiązanie

W ostatnich latach popularność w budownictwie ponownie zyskały prefabrykaty. Dotyczy to nie tylko sektora mieszkaniowego, ale również obiektów mostowych. Najpowszechniej stosowanymi prefabrykatami mostowymi są belki typu T i Kujany. Jednakże na polskich drogach powstaje także coraz więcej obiektów z prefabrykowanych łuków optemARCH

Non-standard FinFET devices for small volume sample sensors

score: 0collation: 127-13

A New Approach for Sensitive Characterization of Semiconductor Laser Beams Using Metal-Semiconductor Thermocouples

This paper presents the results of beam investigations on semiconductor IR lasers using novel detectors based on thermocouples. The work covers the design, the fabrication of detectors, and the experimental validation of their sensitivity to IR radiation. The principle of operation of the manufactured detectors is based on the Seebeck effect (the temperature difference between hot and cold junctions induced voltage appearance). The devices were composed of several thermocouples arranged in a linear array. The nano- and microscale thermocouples (the hot junctions) were fabricated using a typical Si-compatible MEMS process enhanced with focused ion beam (FIB) milling. The performance of the hot junctions was tested, focusing on their sensitivity to IR radiation covering the near-infrared (NIR) radiation (λ = 976 nm). The output voltage was measured as a function of the detector position in the XY plane. The measurement results allowed for reconstructing the Gaussian-like intensity distribution of the incident light beam

Fabrication and properties of the field emission array with self-alignment gate electrode

A new method for the fabrication of field emis- sion arrays (FEA) based on bulk/surface silicon micromachin- ing and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in sil- icon by mean anisotropic etching in alkali solution of the front silicon film through micro holes opened in silicon oxide layer. The field emission of the fabricated emitter tips is enhanced by a diamond-like-carbon film formed by chemical vapor de- position on the microtips. Back side contacts are formed by metal patterning. Detailed Raman, Auger and TEM investi- gations of the deposited DLC films (nanocrystalline diamond smaller than 10 nm) will be presented. In this paper we dis- cuss the problems related to the development of field emission arrays technology. We also demonstrate examples of devices fabricated according to those technologies

Ultrahigh finesse cavity-enhanced spectroscopy for accurate tests of quantum electrodynamics for molecules

International audienceWe report the most accurate, to the best of our knowledge, measurement of the position of the weak quadrupole S(2) 2–0 line in ${{\rm D}_2}$D2. The spectra were collected with a frequency-stabilized cavity ringdown spectrometer (FS-CRDS) with an ultrahigh finesse optical cavity (${\cal F} = 637 000$F=637000) and operating in the frequency-agile, rapid scanning spectroscopy (FARS) mode. Despite working in the Doppler-limited regime, we reached 40 kHz of statistical uncertainty and 161 kHz of absolute accuracy, achieving the highest accuracy for homonuclear isotopologues of molecular hydrogen. The accuracy of our measurement corresponds to the fifth significant digit of the leading term in quantum electrodynamics (QED) correction. We observe $2.3\sigma$2.3σ discrepancy with the recent theoretical value