Iterative learning control method for improving the effectiveness of upper limb rehabilitation

In rehabilitation, passive control mode is common used at early stages of the post-stroke therapy, when the impaired limb is usually unresponsive. The simplest is the use of a proportional-integral-derivative (PID) feedback control which usually regulates the position or the interaction force along a known reference. Nonetheless PID method cannot achieve an ideal tracking performance due to dynamical uncertainties and unknown time-varying periodic disturbances from the environment. In order to minimize steady-state error with respect to uncertainties in exoskeleton passive control, Iterative Learning Control(ILC) and Neural PID control are proposed to improve the control effective of conventional linear PID. In this paper, two different control algorithms are introduced. Moreover, an experimental study on a 5-DOF upper limb exoskeleton with them is addressed for comparison

A study of Al1-xInxN growth by reflection high-energy electron diffraction-incorporation of cation atoms during molecular-beam epitaxy

Molecular-beam epitaxy of Al1-x Inx N alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 °C. © 2008 American Institute of Physics.published_or_final_versio

A study of Inx Ga1-x N growth by reflection high-energy electron diffraction

Epitaxial growth of Inx Ga1-x N alloys on GaN (0001) by plasma-assisted molecular-beam epitaxy is investigated using the in situ reflection high-energy electron-diffraction (RHEED) technique. Based on RHEED pattern changes over time, the transition of growth mode from two-dimensional (2D) nucleation to three-dimensional islanding is studied for various indium compositions. RHEED specular-beam intensity oscillations are recorded during the 2D wetting-layer growth, and the dependences of the oscillation period/frequency on the substrate temperature and source flux are established. By measuring the spacing between diffraction spots in RHEED, we also estimated indium composition, x, in alloys grown under different flux combinations. Incorporation coefficients of both gallium and indium are derived. Possible surface segregation of indium atoms is finally examined. © 2005 American Institute of Physics.published_or_final_versio

Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE. © 2006 American Institute of Physics.published_or_final_versio

Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy

Molecular-beam epitaxy of Inx Ga1-x N alloy on GaN(0001) is investigated by scanning tunneling microscopy. The Stranski-Krastanov mode of growth of the alloy is followed, where the newly nucleated three-dimensional islands are initially coherent to the underlying GaN and the wetting layer, but then become dislocated when grown bigger than about 20 nm in the lateral dimension. Two types of islands show different shapes, where the coherent ones are cone shaped and the dislocated ones are pillar like, having flat-tops. Within a certain range of material coverage, the surface contains both coherent and dislocated islands, showing an overall bimodal island-size distribution. The continued deposition on such surfaces leads to the pronounced growth of dislocated islands, whereas the sizes of the coherent islands change very little. © 2005 The American Physical Society.published_or_final_versio

InN Island shape and its dependence on growth condition of molecular-beam epitaxy

The three-dimensional (3D) island shapes of the InN and its dependence on growth conditions of molecular-beam epitaxy (MBE) were analyzed. The islands were dislocated and the strain in an island depended on its size. The pillar-shaped islands with low aspect ratios represented the equilibrium shape, and the pyrimidal islands with higher aspect ratios were limited by kinetics during MBE growth. The decreasing trend of island aspect ratio with respect to island size was attributed to gradual relaxation of residual strain in dislocated islands.published_or_final_versio

Dislocation network at InN/GaN interface revealed by scanning tunneling microscopy

For heteroepitaxy of InN on GaN(0001) by molecular-beam epitaxy, the lattice misfit strain is relieved by misfit dislocations (MDs) formed at the interface between InN and GaN. Imaging by scanning tunneling microscopy (STM) of the surfaces of thin InN epifilms reveals line feature parallel to 〈112 0〉. Their contrast becomes less apparent for thicker epifilms. From the interline spacing as well as a comparison with transmission electron microscopy studies, it is suggested that they correspond to the MDs beneath the surface. The STM contrast originates from both the surface distortion caused by the local strain at MDs and the electronic states of the defects. © 2008 American Institute of Physics.published_or_final_versio

Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

The scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.published_or_final_versio

CAR-Net: Clairvoyant Attentive Recurrent Network

We present an interpretable framework for path prediction that leverages dependencies between agents' behaviors and their spatial navigation environment. We exploit two sources of information: the past motion trajectory of the agent of interest and a wide top-view image of the navigation scene. We propose a Clairvoyant Attentive Recurrent Network (CAR-Net) that learns where to look in a large image of the scene when solving the path prediction task. Our method can attend to any area, or combination of areas, within the raw image (e.g., road intersections) when predicting the trajectory of the agent. This allows us to visualize fine-grained semantic elements of navigation scenes that influence the prediction of trajectories. To study the impact of space on agents' trajectories, we build a new dataset made of top-view images of hundreds of scenes (Formula One racing tracks) where agents' behaviors are heavily influenced by known areas in the images (e.g., upcoming turns). CAR-Net successfully attends to these salient regions. Additionally, CAR-Net reaches state-of-the-art accuracy on the standard trajectory forecasting benchmark, Stanford Drone Dataset (SDD). Finally, we show CAR-Net's ability to generalize to unseen scenes.Comment: The 2nd and 3rd authors contributed equall

In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.published_or_final_versio