High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3_3/SrZrO3_3 heterostructures

By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^{9}$ cm$^{-2}$ for buffered films prepared on (110) TbScO$_3$ substrates by pulsed laser deposition.Comment: 5 pages, 4 figure

Far-Field Radiation of Three-Dimensional Plasmonic Gold Tapers near Apexes

International audienceThree-dimensional plasmonic gold tapers are widely used structures in nano-optics for achieving imaging at the nanometer scale, enhanced spectroscopy, confined light sources, and ultrafast photoelectron emission. To understand their radiation properties further, especially in the proximity of the apex at the nanoscale, we employ cathodoluminescence spectroscopy with high spatial and energy resolution. The plasmon-induced radiation in the visible spectral range from three-dimensional gold tapers with opening angles of 13°and 47°is investigated under local electron excitation. We observe a much weaker radiation from the apex of the 13°taper than from that of the 47°taper. By means of finite-difference time-domain simulations we show that for small opening angles plasmon modes that are created at the apex are efficiently guided along the taper shaft. In contrast for tapers with larger opening angles, generated plasmon polaritons experience larger radiation damping. Interestingly, we find for both tapers that the most intense radiation comes from locations a few hundreds of nanometers behind the apexes, instead of exactly at the apexes. Our findings provide useful details for the design of plasmonic gold tapers as confined light sources or light absorbers

Combined Spectroscopy and Electrical Characterization of La:BaSnO3_\text{3} Thin Films and Heterostructures

For La-doped BaSnO$_\text{3}$ thin films grown by pulsed laser deposition, we combine chemical surface characterization and electronic transport studies to probe the evolution of electronic states in the band structure for different La-doping content. Systematic analyses of spectroscopic data based on fitting the core electron line shapes help to unravel the composition of the surface as well as the dynamics associated with increasing doping. This dynamics is observed with a more pronounced signature in the Sn 3d core level, which exhibits an increasing asymmetry to the high binding energy side of the peak with increasing electron density. The present results expand the current understanding of the interplay between the doping concentration, electronic band structure and transport properties of epitaxial La:BaSnO$_\text{3}$ films.Comment: 7 Figures, 4 Tables in manuscript; and 6 Figures and 1 Table in the Supplementary Informatio

Breaking the Mode Degeneracy of Surface-Plasmon Resonances in a Triangular System

In this paper, we present a systematic investigation of symmetry-breaking in the plasmonic modes of triangular gold nanoprisms. Their geometrical C3 symmetry is one of the simplest possible that allows degeneracy in the particle's mode spectrum. It is reduced to the non-degenerate symmetries Cv or E by positioning additional, smaller gold nanoprisms in close proximity, either in a lateral or a vertical configuration. Corresponding to the lower symmetry of the system, its eigenmodes also feature lower symmetries (Cv), or preserve only the identity (E) as symmetry. We discuss how breaking the symmetry of the plasmonic system not only breaks the degeneracy of some lower order modes, but also how it alters the damping and eigenenergies of the observed Fano-type resonances

Surface plasmon modes of a single silver nanorod: an electron energy loss study

We present an electron energy loss study using energy filtered TEM of spatially resolved surface plasmon excitations on a silver nanorod of aspect ratio 14.2 resting on a 30 nm thick silicon nitride membrane. Our results show that the excitation is quantized as resonant modes whose intensity maxima vary along the nanorod's length and whose wavelength becomes compressed towards the ends of the nanorod. Theoretical calculations modelling the surface plasmon response of the silver nanorod-silicon nitride system show the importance of including retardation and substrate effects in order to describe accurately the energy dispersion of the resonant modes.Comment: 9 pages, 6 figure

Elemental redistributions at structural defects in Cu(In,Ga)Se₂ thin films for solar cells

The microstructural evolution of Cu(In,Ga)Se₂ absorber layers during a three-stage-type co-evaporation process was studied to elucidate the effect of a Cu-rich stage on the formation of extended structural defects. Defect densities for two Cu-poor samples, one interrupted before and one after this crucial Cu-rich composition stage, were investigated by scanning transmission electron microscopy (STEM) imaging. The structure and chemical nature of individual defects were investigated by aberration-corrected high-resolution STEM in combination with electron energy-loss spectroscopy on the atomic-scale. In spite of the different defect densities between the two samples, most of the individual defects exhibited similar chemistry. In particular, the elemental distributions of atomic columns at {112} twin planes, which are very frequent in Cu(In,Ga)Se₂ thin films, were found to be the same as in the defect-free grain interiors. In contrast, within grain boundaries, dislocation cores, and other structurally more complex defects, elemental redistributions of Cu and In were observed

Effects of Size Reduction on the Electrical Transport Properties of 3D Bi Nanowire Networks

3D nanowire networks are fascinating systems for future microelectronic devices. They can be handled like macroscopic objects, while exhibiting properties of nanoscale materials. Here, the fabrication of free‐standing 3D bismuth nanowire networks with well‐controlled and systematically adjusted wire diameter and interconnectivity is presented. The samples are fabricated by pulse electroplating of bismuth into the pores of ion track‐etched membranes using an aqueous electrolyte. By optimizing the growth parameters, homogeneously grown, mechanically self‐supporting and free‐standing networks without a supporting matrix are achieved. Cross‐plane Seebeck coefficient and electrical resistance values are investigated as a function of nanowire diameter and temperature. The unique characteristics of these highly interconnected and mechanically self‐supported Bi 3D nanowire networks offer exciting perspectives for their implementation in, e.g., infrared detection based on thermoelectric effects, sensing, and THz applications