31 research outputs found
The defect scheelite-type lanthanum(III) ortho-oxidomolybdate(VI) La0.667[MoO4]
The crystal structure of La0.667[MoO4] in the Scheelite-type is described in that paper
Defect scheelite-type lanthanoid(III) ortho-oxomolybdates(VI) Ln0.667[MoO4] (Ln = Ce, Pr, Nd, and Sm) and their relationship to zircon and the NaTl-type structure
The rare-earth metal(III) ortho-oxomolybdates with the formula Ln0.667[MoO4] (Ln = Ce, Pr, Nd, and Sm) and defect scheelite-type structure crystallize in the tetragonal space group I41/a (a = 533–525, c = 1183–1158 pm) with four formula units per unit cell. The Ln3+ cations at Wyckoff position 4b exhibit a coordination sphere of eight oxygen atoms in the shape of a trigonal dodecahedron. The same site symmetry ( 4 ..) is observed for the tetrahedral oxomolybdate(VI) entities [MoO4]2–, since their central Mo6+ cation is situated at the 4a position. Due to this equal site multiplicity, the lanthanoid(III) cations have to be statistically under-occupied to maintain electroneutrality, thus a defect scheelite structure emerges. The partial structure of both the Ln3+ cations and the [MoO4]2– anions (if shrunk to their centers of gravity) can be best described as distorted diamond-like arrangements. Therefore, these two interpenetrating partial structures exhibit a similar setup as found in the zircon-type as well as in the NaTl-type structure
BiVO4 based high k microwave dielectric materials: a review
The BiVO4material has attracted much attention in recent years due to its active photocatalytic properties under visible light, bright yellow color as a nontoxic pigment, and its high relative permittivity (ϵr) and Qf (quality factor, Q × resonant frequency, f) as a potential microwave dielectric ceramic. In this review, we introduce the origin, synthesis, crystal structure and phase transitions of the four polymorphic phases of BiVO4: orthorhombic (pucherite), zircon (dreyerite), scheelite monoclinic (clinobisvanite) and scheelite tetragonal. We then precis recent studies on doped BiVO4ceramics in terms of A site, B site and A/B site complex substitutions. Low sintering temperature (<800 °C) and high ϵrvalues could be obtained in some solid solution ceramics and near zero temperature coefficient of resonant frequency (TCF/τf) values could be achieved in layered or granulated particle composite ceramics. Besides, a series of temperature stable high ϵrmicrowave dielectric ceramics can also be obtained for many co-fired composite ceramics, such as BiVO4-TiO2, and BiVO4-TiO2-Bi2Ti4O11. The high ϵr, high Qf value, low sintering temperature and chemical compatibility with some base metals suggest that BiVO4-based materials are strong candidates for both LTCC and other microwave device applications in current 4G and future 5G technologies