Diamond electro-optomechanical resonators integrated in nanophotonic circuits

Diamond integrated photonic devices are promising candidates for emerging applications in nanophotonics and quantum optics. Here we demonstrate active modulation of diamond nanophotonic circuits by exploiting mechanical degrees of freedom in free-standing diamond electro-optomechanical resonators. We obtain high quality factors up to 9600, allowing us to read out the driven nanomechanical response with integrated optical interferometers with high sensitivity. We are able to excite higher order mechanical modes up to 115 MHz and observe the nanomechanical response also under ambient conditions.Comment: 15 pages, 4 figure

Silicon Photonics for Coherent Terahertz Generation and Detection

Silicon-plasmonic internal photoemission devices can act as photomixers for generating terahertz frequency carriers (T-waves) for transmitters (Tx), or they function as receivers (Rx) for coherently downconverting Twave signals to the baseband. In a first demonstration, we monolithically integrate a Tx and a Rx on a silicon chip and operate them in a carrier frequency range up to 1THz . With a co-integrated transmission line both components can be connected

High-Q optomechanical circuits made from polished nanocrystalline diamond thin films

We demonstrate integrated optomechanical circuits with high mechanical quality factors prepared from nanocrystalline diamond thin films. Using chemomechanical polishing, the RMS surface roughness of as grown polycrystalline diamond films is reduced below 3nm to allow for the fabrication of high-quality nanophotonic circuits. By integrating free-standing nanomechanical resonators into integrated optical devices, efficient read-out of the thermomechanical motion of diamond resonators is achieved with on-chip Mach-Zehnder interferometers. Mechanical quality factors up to 28,800 are measured for four-fold clamped optomechanical resonators coupled to the evanescent near-field of nanophotonic waveguides. Our platform holds promise for large-scale integration of optomechanical circuits for on-chip metrology and sensing applications

Field-effect silicon-plasmonic photodetector for coherent T-wave reception

Plasmonic internal photoemission detectors (PIPED) have recently been shown to combine compact footprint and high bandwidth with monolithic co-integration into silicon photonic circuits, thereby opening an attractive route towards optoelectronic generation and detection of waveforms in the sub-THz and THz frequency range, so-called T-waves. In this paper, we further expand the PIPED concept by introducing a metal-oxide-semiconductor (MOS) interface with an additional gate electrode that allows to control the carrier dynamics in the device and the degree of internal photoemission at the metal-semiconductor interfaces. We experimentally study the behavior of dedicated field-effect (FE-)PIPED test structures and develop a physical understanding of the underlying principles. We find that the THz down-conversion efficiency of FE-PIPED can be significantly increased when applying a gate potential. Building upon the improved understanding of the device physics, we further perform simulations and show that the gate field increases the carrier density in the conductive channel below the gate oxide to the extent that the device dynamics are determined by ultra-fast dielectric relaxation rather than by the carrier transit time. In this regime, the bandwidth can be increased to more than 1 THz. We believe that our experiments open a new path towards understanding the principles of internal photoemission in plasmonic structures, leading to PIPED-based optoelectronic signal processing systems with unprecedented bandwidth and efficiency

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) integration

Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, nei-ther silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid integration, which combine SOI waveguides and plasmonic nanostructures with organic electro-optic cladding materials

Capacitively Coupled Silicon-Organic Hybrid Modulator for 200 Gbit/s PAM-4 Signaling

We demonstrate capacitively coupled silicon-organic hybrid (SOH) modulator with a π-voltage-length product of 1.3 V mm and 3 dB EO bandwidth exceeding 65 GHz. The modulator is used for 200 Gbit/s (100 GBd) PAM-4 signaling