Measuring the magnetic moment density in patterned ultrathin ferromagnets with submicron resolution

We present a new approach to infer the surface density of magnetic moments $I_s$ in ultrathin ferromagnetic films with perpendicular anisotropy. It relies on quantitative stray field measurements with an atomic-size magnetometer based on the nitrogen-vacancy center in diamond. The method is applied to microstructures patterned in a 1-nm-thick film of CoFeB. We report measurements of $I_s$ with a few percent uncertainty and a spatial resolution in the range of $(100$ nm)$^2$, an improvement by several orders of magnitude over existing methods. As an example of application, we measure the modifications of $I_s$ induced by local irradiation with He$^+$ ions in an ultrathin ferromagnetic wire. This method offers a new route to study variations of magnetic properties at the nanoscale.Comment: 9 pages and 7 figures including main text and Supplemental Informatio

Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media

Combining He ion irradiation and thermal mobility below 600K, we both trigger and control the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd). Kinetic Monte Carlo simulations show how the initial directional short range order determines order propagation. Magnetic ordering perpendicular to the film plane was achieved, promoting the initially weak magnetic anisotropy to the highest values known for FePd films. This post-growth treatment should find applications in ultrahigh density magnetic recording.Comment: 7 pages, 3 Figure

Ferromagnetic resonance linewidth in ultrathin films with perpendicular magnetic anisotropy

Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe) thin films. A broadband FMR setup has been used to investigate the origin of the enhanced linewidth in Ni$|$Co multilayer films with PMA. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases significantly when the magnetization is rotated into the film plane. Irradiation of the film with Helium ions decreases the PMA and the distribution of PMA parameters. This leads to a great reduction of the FMR linewidth for in-plane magnetization. These results suggest that fluctuations in PMA lead to a large two magnon scattering contribution to the linewidth for in-plane magnetization and establish that the Gilbert damping is enhanced in such materials ($\alpha \approx 0.04$, compared to $\alpha \approx 0.002$ for pure Fe)

Influence of ion irradiation on switching field and switching field distribution in arrays of Co/Pd-based bit pattern media

International audienceWe have used ion irradiation to tune switching field and switching field distribution ͑SFD͒ in polycrystalline Co/Pd multilayer-based bit pattern media. Light He + ion irradiation strongly decreases perpendicular magnetic anisotropy amplitude due to Co/Pd interface intermixing, while the granular structure, i.e., the crystalline anisotropy, remains unchanged. In dot arrays, the anisotropy reduction leads to a decrease in coercivity ͑H C ͒ but also to a strong broadening of the normalized SFD/ H C ͑in percentage͒, since the relative impact of misaligned grains is enhanced. Our experiment thus confirms the major role of misorientated grains in SFD of nanodevice arrays. Today a major research effort in magnetism is targeted toward achieving ultrahigh density data storage with nano-scale magnets. Spin-transfer magnetic random access memory ͑spin-RAM͒ and bit patterned media ͑BPM͒ technologies are currently part of the most promising media. The implementation of both of these technologies relies on achieving in-detail physical understanding and control of the magnetization reversal mechanism in each nanoscopic individual bit to ensure reproducibility of the bit properties in order to avoid write errors. Perpendicular magnetic anisotropy ͑PMA͒ materials, such as polycrystalline Co/Pd, Co/Pt, and Co/Ni multilayers, are believed to be promising materials for both spin-RAM and BPM applications. 1–4 Indeed, they have a well defined high amplitude uniaxial anisotropy that provides good thermal stability while offering low critical current in spin-transfer devices 2 and tunable switching fields in BPM.

Spin-orbit torques for current parallel and perpendicular to a domain wall

We report field- and current-induced domain wall (DW) depinning experiments in Ta/Co20Fe60B20/MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show for the first time depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents parallel to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared to previously used measurements for just two field directions (parallel and perpendicular to the DW) and shows the sensitivity of the spin-orbit torque to the precise DW structure and pinning sites.Comment: 11 pages, 3 figure