Performance of CMOS imager as sensing element for a Real-time Active Pixel Dosimeter for Interventional Radiology procedures

Staff members applying Interventional Radiology procedures are exposed to ionizing radiation, which can induce detrimental effects to the human body, and requires an improvement of radiation protection. This paper is focused on the study of the sensor element for a wireless real-time dosimeter to be worn by the medical staff during the interventional radiology procedures, in the framework of the Real-Time Active PIxel Dosimetry (RAPID) INFN project. We characterize a CMOS imager to be used as detection element for the photons scattered by the patient body. The CMOS imager has been first characterized in laboratory using fluorescence X-ray sources, then a PMMA phantom has been used to diffuse the X-ray photons from an angiography system. Different operating conditions have been used to test the detector response in realistic situations, by varying the X-ray tube parameters (continuous/pulsed mode, tube voltage and current, pulse parameters), the sensor parameters (gain, integration time) and the relative distance between sensor and phantom. The sensor response has been compared with measurements performed using passive dosimeters (TLD) and also with a certified beam, in an accredited calibration centre, in order to obtain an absolute calibration. The results are very encouraging, with dose and dose rate measurement uncertainties below the 10% level even for the most demanding Interventional Radiology protocols

Advanced active pixel architectures in standard CMOS technology

This paper aims at exploring and validating the adoption of standard fabrication processes for the realization of CMOS active pixel sensors, for particle detection purposes. The goal is to implement a single-chip, complete radiation sensor system, including on a CMOS integrated circuit the sensitive devices, read-out and signal processing circuits. A prototype chip (RAPS01) based on these principles has been already fabricated, and a chip characterization has been carried out; in particular, the evaluation of the sensitivity of the sensor response on the actual operating conditions was estimated, as well as the response uniformity. Optimization and tailoring of the sensor structures for High Energy Physics applications are being evaluated in the design of the next generation chip (RAPS02). Basic features of the new chip includes digitally configurable readout and multi-mode access (i.e., either sparse of line-scan readout). © 2005 IEEE

Integrated sensor system for DNA amplification and separation based on thin film technology

This paper presents the development of a lab-on-chip, based on thin-film sensors, suitable for DNA treatments. In particular, the system performs on-chip DNA amplification and separation of double-strand DNA into single-strand DNA, combining a polydimethylsiloxane microfluidic network, thin-film electronic devices, and surface chemistry. Both the analytical procedures rely on the integration on the same glass substrate of thin-film metal heaters and amorphous silicon temperature sensors to achieve a uniform temperature distribution (within ±1 °C) in the heated area and a precise temperature control (within ±0.5 °C). The DNA separation also counts on the binding between biotinylated dsDNA and a layer of streptavidin immobilized into a microfluidic channel through polymer-brushes-based layer. This approach results in a fast and low reagents consumption system. The tested DNA treatments can be applied for carrying out the on-chip systematic evolution of ligands by exponential enrichment process, a chemistry technique for the selection of aptamers

Results from CHIPIX-FE0, a Small Scale Prototype of a New Generation Pixel Readout ASIC in 65nm CMOS for HL-LHC

CHIPIX65-FE0 is a readout ASIC in CMOS 65nm designed by the CHIPIX65 project for a pixel detector at the HL-LHC, consisting of a matrix of 64x64 pixels of dimension 50x50 μm2. It is fully functional, can work at low thresholds down to 250e− and satisfies all the specifications. Results confirm low-noise, fast performance of both the synchronous and asynchronous front-end in a complex digital chip. CHIPIX65-FE0 has been irradiated up to 600 Mrad and is only marginally affected on analog performance. Further irradiation to 1 Grad will be performed. Bump bonding to silicon sensors is now on going and detailed measurements will be presented. The HL-LHC accelerator will constitute a new frontier for particle physics after year 2024. One major experimental challenge resides in the inner tracking detectors, measuring particle position: here the dimension of the sensitive area (pixel) has to be scaled down with respect to LHC detectors. This paper describes the results obtained by CHIPIX65-FE0, a readout ASIC in CMOS 65nm designed by the CHIPIX65 project as small-scale demonstrator for a pixel detector at the HL-LHC. It consists of a matrix of 64x64 pixels of dimension 50x50 um2 pixels and contains several pieces that are included in RD53A, a large scale ASIC designed by the RD53 Collaboration: two out of three front-ends (a synchronous and an asynchronous architecture); several building blocks; a (4x4) pixel region digital architecture with central local buffer storage, complying with a 3 GHz/cm2 hit rate and a 1 MHz trigger rate maintaining a very high efficiency (above 99%). The chip is 100% functional, either running in triggered or trigger-less mode. All building-blocks (DAC, ADC, Band Gap, SER, sLVS-TX/RX) and very front ends are working as expected. Analog performance shows a remarkably low ENC of 90e-, a fast-rise time below 25ns and low-power consumption (about 4μA/pixel) in both synchronous and asynchronous front-ends; a very linear behavior of CSA and discriminator. No significant cross talk from digital electronics has been measured, achieving a low threshold of 250e-. Signal digitization is obtained with a 5b-Time over Threshold technique and is shown to be fairly linear, working well either at 80 MHz or with higher frequencies of 300 MHz obtained with a tunable local oscillator. Irradiation results up to 600 Mrad at low temperature (-20°C) show that the chip is still fully functional and analog performance is only marginally degraded. Further irradiation will be performed up to 1 Grad either at low or room temperature, to further understand the level of radiation hardness of CHIPIX65-FE0. We are now in the process of bump bonding CHIPIX65-FE0 to 3D and possibly planar silicon sensors during spring. Detailed results will be presented in the conference paper

First Measurements of a Prototype of a New Generation Pixel Readout ASIC in 65 nm CMOS for Extreme Rate HEP Detectors at HL-LHC

A first prototype of a readout ASIC in CMOS 65nm for a pixel detector at High Luminosity LHC is described. The pixel cell area is 50x50 um2 and the matrix consists of 64x64 pixels. The chip was designed to guarantee high efficiency at extreme data rates for very low signals and with low power consumption. Two different analogue front-end designs, one synchronous and one asynchronous, were implemented, both occupying an area of 35x35 um2. ENC value is below 100e- for an input capacitance of 50 fF and in-time threshold below 1000e-. Leakage current compensation up to 50 nA with power consumption below 5 uW. A ToT technique is used to perform charge digitization with 5-bit precision using either a 40 MHz clock or a local Fast Oscillator up to 800 MHz. Internal 10-bit DAC's are used for biasing, while monitoring is provided by a 12-bit ADC. A novel digital architecture has been developed to ensure above 99.5% hit efficiency at pixel hit rates up to 3 GHz/cm2, trigger rates up to 1 MHz and trigger latency of 12.5 us. The total power consumption per pixel is below 5uW. Analogue dead-time is below 1%. Data are sent via a serializer connected to a CMOS-to-SLVS transmitter working at 320 MHz. All IP-blocks and front-ends used are silicon-proven and tested after exposure to ionizing radiation levels of 500-800 Mrad. The chip was designed as part of the Italian INFN CHIPIX65 project and in close synergy with the international CERN RD53 and was submitted in July 2016 for production. Early test results for both front-ends regarding minimum threshold, auto-zeroing and low-noise performance are high encouraging and will be presented in this paper

A Hydrogenated amorphous silicon detector for Space Weather Applications

The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent radiation hardness and finds application in harsh radiation environments for medical purposes, for particle beam characterization and in space weather science and applications. The critical flux detection threshold for solar X rays, soft gamma rays, electrons and protons is discussed in detail.Comment: 32 pages, 13 figures, submitted to Experimental Astronom

A real time active pixel dosimeter for interventional radiology

Abstract The Interventional Radiology (IR) is a well established technique in medical domain aiming to obtain a good X-ray image quality while minimizing the radiation dose absorbed by patients and staff members. From a radioprotection point of view, these procedures are considered potentially harmful for interventional radiologists and medical staff. Individual monitoring of operators is very important and is performed by assessing effective dose, equivalent dose to the extremities and eye lens, with the use of passive dosimeters (e.g. TLDs) calibrated in terms of personal dose equivalent H p (10), H p (0.07) and H p (3), respectively. In this work we will present a proposal for an innovative X-ray dosimeter prototype, capable of real-time measurements, packaged in a small form-factor, with wireless communication to be used for individual operators dosimetry during IR procedures. The proposed real-time dosimeter relies on CMOS Active Pixel Sensor, widely used in visible imaging applications. Some preliminary results on the characterization of CMOS active pixel sensors as diffused X-ray detectors during a typical IR session will be presented

Characterization of Low-Cost Capacitive Soil Moisture Sensors for IoT Networks

The rapid development and wide application of the IoT (Internet of Things) has pushed toward the improvement of current practices in greenhouse technology and agriculture in general, through automation and informatization. The experimental and accurate determination of soil moisture is a matter of great importance in different scientific fields, such as agronomy, soil physics, geology, hydraulics, and soil mechanics. This paper focuses on the experimental characterization of a commercial low-cost “capacitive” coplanar soil moisture sensor that can be housed in distributed nodes for IoT applications. It is shown that at least for a well-defined type of soil with a constant solid matter to volume ratio, this type of capacitive sensor yields a reliable relationship between output voltage and gravimetric water content