884 research outputs found

    Fowler-Nordheim-like local injection of photoelectrons from a silicon tip

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    Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range of application of future spin injection experiments, the measurements are carried out under nitrogen gas at room temperature. It is found that while tunneling of valence band electrons is described by a standard process between the semiconductor valence band and the metal, the tunneling of photoelectrons obeys a Fowler-Nordheim-like process directly from the conduction band. In the latter case, the bias dependence of the photocurrent as a function of distance is in agreement with theoretical predictions which include image charge effects. Quantitative analysis of the bias dependence of the dark and photocurrent spectra gives reasonable values for the distance, and for the tip and metal work functions. For small distances image charge effects induce a vanishing of the barrier and the bias dependence of the photocurrent is exponential. In common with many works on field emission, fluctuations in the tunneling currents are observed. These are mainly attributed to changes in the prefactor for the tunneling photocurrent, which we suggest is caused by an electric-field-induced modification of the thickness of the natural oxide layer covering the tip apex.Comment: 12 pages, 11 figures. Submitted to Phys. Rev.

    Quantum-dot spin qubit and hyperfine interaction

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    We review our investigation of the spin dynamics for two electrons confined to a double quantum dot under the influence of the hyperfine interaction between the electron spins and the surrounding nuclei. Further we propose a scheme to narrow the distribution of difference in polarization between the two dots in order to suppress hyperfine induced decoherence.Comment: 12 pages, 3 figures; Presented as plenary talk at the annual DPG meeting 2006, Dresden (to appear in Advances in Solid State Physics vol. 46, 2006

    A New Type of Electron Nuclear-Spin Interaction from Resistively Detected NMR in the Fractional Quantum Hall Effect Regime

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    Two dimensional electron gases in narrow GaAs quantum wells show huge longitudinal resistance (HLR) values at certain fractional filling factors. Applying an RF field with frequencies corresponding to the nuclear spin splittings of {69}Ga, {71}Ga and {75}As leads to a substantial decreases of the HLR establishing a novel type of resistively detected NMR. These resonances are split into four sub lines each. Neither the number of sub lines nor the size of the splitting can be explained by established interaction mechanisms.Comment: 4 pages, 3 figure

    Voltage control of nuclear spin in ferromagnetic Schottky diodes

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    We employ optical pump-probe spectroscopy to investigate the voltage dependence of spontaneous electron and nuclear spin polarizations in hybrid MnAs/n-GaAs and Fe/n-GaAs Schottky diodes. Through the hyperfine interaction, nuclear spin polarization that is imprinted by the ferromagnet acts on conduction electron spins as an effective magnetic field. We demonstrate tuning of this nuclear field from <0.05 to 2.4 kG by varying a small bias voltage across the MnAs device. In addition, a connection is observed between the diode turn-on and the onset of imprinted nuclear polarization, while traditional dynamic nuclear polarization exhibits relatively little voltage dependence.Comment: Submitted to Physical Review B Rapid Communications. 15 pages, 3 figure

    Dynamic nuclear polarization at the edge of a two-dimensional electron gas

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    We have used gated GaAs/AlGaAs heterostructures to explore nonlinear transport between spin-resolved Landau level (LL) edge states over a submicron region of two-dimensional electron gas (2DEG). The current I flowing from one edge state to the other as a function of the voltage V between them shows diode-like behavior---a rapid increase in I above a well-defined threshold V_t under forward bias, and a slower increase in I under reverse bias. In these measurements, a pronounced influence of a current-induced nuclear spin polarization on the spin splitting is observed, and supported by a series of NMR experiments. We conclude that the hyperfine interaction plays an important role in determining the electronic properties at the edge of a 2DEG.Comment: 8 pages RevTeX, 7 figures (GIF); submitted to Phys. Rev.

    Spin battery operated by ferromagnetic resonance

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    Precessing ferromagnets are predicted to inject a spin current into adjacent conductors via Ohmic contacts, irrespective of a conductance mismatch with, for example, doped semiconductors. This opens the way to create a pure spin source spin battery by the ferromagnetic resonance. We estimate the spin current and spin bias for different material combinations.Comment: The estimate for the magnitude of the spin bias is improved. We find that it is feasible to get a measurable signal of the order of the microwave frequency already for moderate rf intensitie

    The anti-sigma factor RsrA responds to oxidative stress by reburying its hydrophobic core

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    Redox-regulated effector systems that counteract oxidative stress are essential for all forms of life. Here we uncover a new paradigm for sensing oxidative stress centred on the hydrophobic core of a sensor protein. RsrA is an archetypal zinc-binding anti-sigma factor that responds to disulfide stress in the cytoplasm of Actinobacteria. We show that RsrA utilizes its hydrophobic core to bind the sigma factor σ R preventing its association with RNA polymerase, and that zinc plays a central role in maintaining this high-affinity complex. Oxidation of RsrA is limited by the rate of zinc release, which weakens the RsrA-σ R complex by accelerating its dissociation. The subsequent trigger disulfide, formed between specific combinations of RsrA's three zinc-binding cysteines, precipitates structural collapse to a compact state where all σ R-binding residues are sequestered back into its hydrophobic core, releasing σ R to activate transcription of anti-oxidant genes

    Electron spin dynamics in quantum dots and related nanostructures due to hyperfine interaction with nuclei

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    We review and summarize recent theoretical and experimental work on electron spin dynamics in quantum dots and related nanostructures due to hyperfine interaction with surrounding nuclear spins. This topic is of particular interest with respect to several proposals for quantum information processing in solid state systems. Specifically, we investigate the hyperfine interaction of an electron spin confined in a quantum dot in an s-type conduction band with the nuclear spins in the dot. This interaction is proportional to the square modulus of the electron wave function at the location of each nucleus leading to an inhomogeneous coupling, i.e. nuclei in different locations are coupled with different strength. In the case of an initially fully polarized nuclear spin system an exact analytical solution for the spin dynamics can be found. For not completely polarized nuclei, approximation-free results can only be obtained numerically in sufficiently small systems. We compare these exact results with findings from several approximation strategies.Comment: 26 pages, 9 figures. Topical Review to appear in J. Phys.: Condens. Matte
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