RETURN ON INVESTMENT IN SOCIAL NETWORKS

This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief introduction, the basic switching mechanism of ECM cells is described and the historical development is sketched. In a second part, the full spectra of materials and material combinations used for memory device prototypes and for dedicated studies are presented. In a third part, the specific thermodynamics and kinetics of nanosized electrochemical cells are described. The overlapping of the space charge layers is found to be most relevant for the cell properties at rest. The major factors determining the functionality of the ECM cells are the electrode reaction and the transport kinetics. Depending on electrode and/or electrolyte material electron transfer, electro-crystallization or slow diffusion under strong electric fields can be rate determining. In the fourth part, the major device characteristics of ECM cells are explained. Emphasis is placed on switching speed, forming and SET/RESET voltage, R(ON) to R(OFF) ratio, endurance and retention, and scaling potentials. In the last part, circuit design aspects of ECM arrays are discussed, including the pros and cons of active and passive arrays. In the case of passive arrays, the fundamental sneak path problem is described and as well as a possible solution by two anti-serial (complementary) interconnected resistive switches per cell. Furthermore, the prospects of ECM with regard to further scalability and the ability for multi-bit data storage are addressed

Resistivity scaling and electron relaxation times in metallic nanowires

We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivity scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10.Comment: 19 pages, 5 figure

0-pi Josephson tunnel junctions with ferromagnetic barrier

We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying ~6.7% of the magnetic flux quantum Phi_0. The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field.Comment: submitted to PR

Polarization states of polydomain epitaxial Pb(Zr1-xTix)O3 thin films and their dielectric properties

Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense laminar domain structures. For Pb(Zr1-xTix)O3 (PZT) films with compositions x = 0.9, 0.8, 0.7, 0.6, 0.5, and 0.4, the "misfit strain-temperature" phase diagrams are calculated and compared with each other. It is found that the equilibrium diagrams of PZT films with x > 0.7 are similar to the diagram of PbTiO3 films. They consist of only four different stability ranges, which correspond to the paraelectric phase, single-domain tetragonal ferroelectric phase, and two pseudo-tetragonal domain patterns. In contrast, at x = 0.4, 0.5, and 0.6, the equilibrium diagram displays a rich variety of stable polarization states, involving at least one monoclinic polydomain state. Using the developed phase diagrams, the mean out-of-plane polarization of a poled PZT film is calculated as a function of the misfit strain and composition. Theoretical results are compared with the measured remanent polarizations of PZT films grown on SrTiO3. Dependence of the out-of-plane dielectric response of PZT films on the misfit strain in the heterostructure is also reported.Comment: 23 pages, 4 figure

Coercive field of ultrathin PbZr0.52Ti0.48O3 epitaxial films

The polarization reversal in single-crystalline ferroelectric films has been investigated experimentally and theoretically. The hysteresis loops were measured for Pb(Zr0.52Ti0.48)O-3 films with thicknesses ranging from 8 to 250 nm. These films were grown epitaxially on SrRuO3 bottom electrodes deposited on SrTiO3 substrates. The measurements using Pt top electrodes showed that the coercive field E-c increases drastically as the film becomes thinner, reaching values as high as E(c)approximate to1200 kV/cm. To understand this observation, we calculated the thermodynamic coercive field E-th of a ferroelectric film as a function of the misfit strain S-m in an epitaxial system and showed that E-th strongly depends on S-m. However, the coercive field of ultrathin films, when measured at high frequencies, exceeds the calculated thermodynamic limit. Since this is impossible for an intrinsic coercive field E-c, we conclude that measurements give an apparent E-c rather than the intrinsic one. An enormous increase of apparent coercive field in ultrathin films may be explained by the presence of a conductive nonferroelectric interface layer. (C) 2003 American Institute of Physics

High-harmonic generation in liquids with few-cycle pulses: effect of laser-pulse duration on the cut-off energy

High-harmonic generation (HHG) in liquids is opening new opportunities for attosecond light sources and attosecond time-resolved studies of dynamics in the liquid phase. In gas-phase HHG, few-cycle pulses are routinely used to create isolated attosecond pulses and to extend the cut-off energy. Here, we study the properties of HHG in liquids, including water and several alcohols, by continuously tuning the pulse duration of a mid-infrared driver from the multi- to the sub-two-cycle regime. Similar to the gas phase, we observe the transition from discrete odd-order harmonics to continuous extreme-ultraviolet emission. However, the cut-off energy is shown to be entirely independent of the pulse duration. This observation is confirmed by ab-initio simulations of HHG in large clusters. Our results support the notion that the cut-off energy is a fundamental property of the liquid, independent of the driving-pulse properties. Combined with the recently reported wavelength-independence of the cutoff, these results confirm the direct sensitivity of HHG to the mean-free paths of slow electrons in liquids. Our results additionally imply that few-cycle mid-infrared laser pulses are suitable drivers for generating isolated attosecond pulses from liquids

Formation and Development of the Training System for Innovative Development of Regional Industry

The paper determines tendencies of modern economy development. The key role in the expanded reproduction of innovation processes in the regions in modern conditions belongs to the enhancement of human capital. Regions are actively increasing their efforts in creating innovative infrastructure, knowledge-intensive industries, while success of regional development is directly related to the effectiveness and cohesion of all innovation infrastructure elements. An indispensable condition for the successful development of innovative infrastructure and high-tech industries is the region economy saturation with highly qualified personnel, particularly mining, trained in view of the projected trends of innovative development