Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon

The transport of dissolved oxygen in the Czochralski silicon towards the arsenic-doped ultra-shallow junction was investigated. Ultra-shallow junction was formed by low-energy As+ ion implantation with the subsequent furnace annealing at 750 C-950 C temperatures for the dopant activation. Oxygen and arse-nic redistributions were investigated by secondary ion mass spectrometry (SIMS) technique. The peculiari-ties of defect creation and transformation were studied by the X-ray diffuse scattering technique (XDS). It was found that oxygen concentration in the arsenic redistribution region is increased a few times already after 1 minute of annealing. Increase of annealing time leads to decrease of oxygen accumulation as a re-sult of oxygen transportation to the SiO2/Si interface. As a result the thickness of screen silicon oxide is in-creased by 0.5 nm. This effect is related with the oxygen gettering from the wafer bulk. A physical mecha-nism of the oxygen transfer is discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3527

Electrical properties of MIS structures with silicon nanoclusters

The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics

Formation of silicon nanoclusters in buried ultra-thin oxide layers

The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO₂ layer

Effective Contract as the Factor to Govern of Work Motivation of Temporary Pedagogical Staff of the Health Camp for Children (on Example of the Federal State Budget Institution ‘Artek’)

The aim of the research is to show the reason of necessity in discovering the motivating potential of employees and also influence on them through the introduction of the effective contract. The research has studied the attitude of the temporary pedagogical staff towards the effective contract, also the research has found the factors that influence on satisfaction of labor, and the motivating profile of a personality was constructed. 207 people aged 18 - 23 have taken part in the research. Those are temporary pedagogical employees of the children's health camp. In the first part of the research the theoretical bases of the effective contract with the reference to modern literature were studied. In the second part the research has found the interrelations between being ready to work by the effective contract and outer stimuli influencing on the quality of the work performed. The revealed direct and inverse relations between the attitude to the effective contract and the reasons followed by employees give the evidence that transferring to the suggested form of labor relations can cause an absolutely opposite effect. Employees working on the effective contract will be oriented only on the remuneration in favorable working conditions and the things like self-improvement, interest to work will be of little interest for them

Activation of porous Si blue emission due to preanodization ion implantation

Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a decrease in the photoluminescence intensity when compared with the initial porous Si. In contrast to this, the B⁺+ N⁺ double doped samples show the increasing of the photoluminescence intensity. This effect can be explained by donor-acceptor pairs formation, and, as a result, the new recombination-active radiative channel creation. Rapid thermal annealing (RTA) treatment leads to significant decrease of PL intensity in the longwave spectral range for initial sample and samples prepared on implanted substrates. Furthermore, RTA treatments leads to the activation of the porous Si high-energy PL formed on the B⁺ implanted wafers

Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization

Transport theory for modeling the electric characteristics of high-quality p-n diodes has been developed. This theory takes into account a non-uniform profile of p- doping, finite thickness of the quasi-neutral regions and possible non-uniformity of the bulk recombination coefficient. The theory is based on related solutions of the Poisson equation, drift-diffusion equation and continuity equation with a generation-recombination term taking into account the simple band-to-band generation/recombination model. We have ascertained that the non-uniform profile of p-doping can lead to formation of p-n junctions with a specific two-slope form of the electrostatic barrier and two regions with the high built-in electric fields. We have found that at strong p + -doping the band structure of the InSb p-n junction has the form that can facilitate the emergence of additional mechanisms of current flow due to the tunneling and avalanche effects at the reverse bias. Using the literary data of the electron and hole lifetimes in InSb at cryogenic temperatures, we have found that the coefficient of bulk recombination can have an essential spatial dependence and considerably increases in the space charge region of p-n diode. The theory was applied to our analysis of p-n InSb diodes with p + -doping by using Be-ion implantation performed in ISP NASU. The theory predicts optimal conditions for detection of infrared emission. The technological process of fabrication, processing and testing has been described in details. Theoretically, it has been found that for parameters of the fabricated diodes and at 77 K the dark currents limited by diffusion and generation-recombination mechanisms should be less than 0.1 μA at the inverse bias of the order of 0.1 V. The measured diode’s I-V characteristics were expected to have strong asymmetry, however, dark currents are by one order larger than those predicted by theory. The latter can be associated with additional current mechanisms, namely: tunneling and avalanche effects

Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynamic conductance of investigated structures has been clearly observed. As a result of theoretical modeling, C - V dependences have been calculated. The experimentally obtained negative constituent of differential capacitance has been qualitatively described. It has been experimentally found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the effect of memorizing

Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates

The possibility to obtain a heterosystem consisting of the upper partially strained and lower relaxed layers by gradient in situ doping of SiGe layers with carbon is considered. The properties of the as-grown and annealed (600 to 1000℃) samples have been studied by Raman spectroscopy and atomic force microscopy. The strain relaxation degree in the as-grown layers as estimated from the Raman spectra amounts 50 % for Si₀.₇-ʸGe₀.₃Сʸ and 0 % for Si₀.₉-ʸGe₀.₁Сʸ. During the annealing, the strain has been found to be relaxed not homogeneously over the whole structure but in a layer-by-layer way. The segregation of carbon atoms is observed for both types of as-grown Si₁-ₓ-ʸGeₓСʸ layers in the near-substrate regions.Розглянуто можливiсть отримання вiдрелаксованих sige шарiв на кремнiєвiй пiдкладцi, що градiєнтно in situ легувалися вуглецем у процесi епiтаксiї. Використовуючи спектроскопiю комбiнацiйного розсiювання свiтла (КРС) та атомну силову мiкроскопiю, дослiджено властивостi вихiдних зразкiв та зразкiв пiсля термiчних обробок у дiапазонi температур 600-1000℃. Iз спектрiв КРС оцiнено ступiнь пластичної релаксацiї у вихiдному Si₀.₇-ʸGe₀.₃Сʸ (50 %) та Si₀.₉-yGe₀.₁Сʸ (0 %) шарах. Встановлено, що при вiдпалах релаксацiя напружень вiдбувається не однаково по всьому об'єму, а пошарово. В обох типах Si₁-ₓ-ʸGeₓСʸ шарiв на їх iнтерфейсах з Si пiдкладками вiдбувається сегрегацiя вуглецю.Рассмотрена возможность получения отрелаксированных sige слоев на кремниевой подложке, градиентно in situ легированных углеродом в процессе эпитаксии. Используя спектроскопию комбинационного рассеяния света (КРС) и атомную силовую микроскопию, исследованы свойства исходных образцов и образцов после термических обработок в диапазоне температур 600-1000℃. Из спектров КРС оценена степень пластической релаксации в исходном Si₀.₇-ʸGe₀.₃Сʸ (50 %) и Si₀.₉-ʸGe₀.₁Сʸ (0 %) слоях. Установлено, что релаксация напряжений при отжигах происходит не однородно по всему объему, а послойно. В обоих типах Si₁-ₓ-ʸGeₓСʸ слоев происходит сегрегация углерода на интерфейсах с Si подложками