Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Abstract
The theoretical and experimental investigations of electrical properties of the
SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have
been carried out. The influence of Si cluster growth conditions on frequency
dependences of C - V characteristics, static and dynamic conductance of investigated
structures has been clearly observed. As a result of theoretical modeling, C - V
dependences have been calculated. The experimentally obtained negative constituent of
differential capacitance has been qualitatively described. It has been experimentally
found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the
effect of memorizing
