Single-photon emitting diode in silicon carbide

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of $>$300 kHz), and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single photon source is proposed. These results provide a foundation for the large scale integration of single photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.Comment: Main: 10 pages, 6 figures. Supplementary Information: 6 pages, 6 figure

Magnetic and structural transitions in La0.4_{0.4}Na0.6_{0.6}Fe2_2As2_2 single crystals

La$_{0.4}$Na$_{0.6}$Fe$_2$As$_2$ single crystals have been grown out of an NaAs flux in an alumina crucible and characterized by measuring magnetic susceptibility, electrical resistivity, specific heat, as well as single crystal x-ray and neutron diffraction. La$_{0.4}$Na$_{0.6}$Fe$_2$As$_2$ single crystals show a structural phase transition from a high temperature tetragonal phase to a low-temperature orthorhombic phase at T$_s$\,=\,125\,K. This structural transition is accompanied by an anomaly in the temperature dependence of electrical resistivity, anisotropic magnetic susceptibility, and specific heat. Concomitant with the structural phase transition, the Fe moments order along the \emph{a} direction with an ordered moment of 0.7(1)\,$\mu_{\textup{B}}$ at \emph{T}\,=\,5 K. The low temperature stripe antiferromagnetic structure is the same as that in other \emph{A}Fe$_{2}$As$_{2}$ (\emph{A}\,=\,Ca, Sr, Ba) compounds. La$_{0.5-x}$Na$_{0.5+x}$Fe$_2$As$_2$ provides a new material platform for the study of iron-based superconductors where the electron-hole asymmetry could be studied by simply varying La/Na ratio.Comment: 9 pages, 7 figures, to appear in Physical Review

Engineering chromium related single photon emitters in single crystal diamond

Color centers in diamond as single photon emitters, are leading candidates for future quantum devices due to their room temperature operation and photostability. The recently discovered chromium related centers are particularly attractive since they possess narrow bandwidth emission and a very short lifetime. In this paper we investigate the fabrication methodologies to engineer these centers in monolithic diamond. We show that the emitters can be successfully fabricated by ion implantation of chromium in conjunction with oxygen or sulfur. Furthermore, our results indicate that the background nitrogen concentration is an important parameter, which governs the probability of success to generate these centers.Comment: 14 pages, 5 figure

AAC Penhold Canada Prairie Spring Red Wheat

AAC Penhold, an awned hard red spring wheat (Triticum aestivum L.) cultivar, yielded significantly more grain than 5700PR while maturing 2 days earlier, and 7.5 cm shorter stature. The seed size was significantly larger than 5700PR and 5701PR, with a test weight significantly heavier than both checks. AAC Penhold expressed resistance to prevalent races of leaf rust and common bunt, and moderate resistance to fusarium head blight and stem rust. AAC Penhold had higher grain and flour protein than the checks and improved Hagberg Falling Number, amylograph viscosity, and water absorption. AAC Penhold is eligible for grades of the market class, Canada Prairie Spring Red wheat

Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.Comment: This is a pre-print of an article published in Nature Electronics. The final authenticated version is available online at https://dx.doi.org/10.1038/s41928-018-0130-

AAC Congress Durum Wheat

Congress durum wheat (Triticum turgidum L. subsp. durum (Desf.) Husn.) is adapted to the durum production area of the Canadian prairies. Averaged over three years, AAC Congress yielded significantly more grain than Strongfield and AC Navigator. AAC Congress had protein concentration significantly lower than Strongfield but significantly higher than Brigade. AAC Congress is eligible for grades of Canada Western Amber Durum. It has lower grain cadmium concentration and higher yellow pigment concentration than the check cultivars, except AAC Cabri

AAC W1876 hard red spring wheat

AAC W1876 hard red spring wheat (Triticum aestivum L.) has grain yield and time to maturity within the range of the check cultivars: Katepwa, Laura, Lillian, Carberry, and CDC Kernen. AAC W1876 has an awned spike, a low lodging score indicative of strong straw, and a short plant stature typical of a semidwarf wheat. AAC W1876 expressed resistance to prevalent races of leaf rust, moderate resistance to stem rust, intermediate resistance to fusarium head blight, yellow rust, common bunt, and loose smut. Compared to the Canada Western Red Spring check cultivars, AAC W1876 had improved flour yield and lower flour ash. AAC W1876 is eligible for grades of Canada Western Red Spring

Lattice-driven magnetic transitions in Al(Fe,T)2X2 compounds

Systematic trends connect detailed composition, lattice parameters and magnetic transition temperatures in the ferromagnetic intermetallic compound AlT2X2 with the Mn2AlB2-type crystal structure, where T = Mn, Fe, Ni, Co and X = B, C. Data were derived from both literature reports and from experiments performed on synthesized samples (T = (Fe1−xNix)2, x = 0, 0.05, 0.1; X = (B0.9C0.1)2). It is observed that compositional variation alters specific bonds responsible for the magnetic phase transition response, which ranges from 200 K ≤ Tt ≤ 310 K. Elemental composition that provides changes in the c-axis length and the associated (T-T)c-axis interatomic distance contribute the largest bonding effects to magnetic phase transition temperature Tt, alterations. Overall, these results are attributed to the dependence of Tt on the specifics of the Fe sublattice occupancy, electronic state and T-T bonding. In contrast, Tt is found to be largely independent of the (b/a) axial ratios and the associated (T-X)b-axis/(T-X)(ac)-plane interatomic distance ratios, indicating that interatomic interactions along the a-axis have little effect on the Tt