Sum-frequency ionic Raman scattering

In a recent report sum-frequency excitation of a Raman-active phonon was experimentally demonstrated for the first time. This mechanism is the sibling of impulsive stimulated Raman scattering, in which difference-frequency components of a light field excite a Raman-active mode. Here we propose that ionic Raman scattering analogously has a sum-frequency counterpart. We compare the four Raman mechanisms, photonic and ionic difference- and sum-frequency excitation, for three different example materials using a generalized oscillator model for which we calculate the parameters with density functional theory. Sum-frequency ionic Raman scattering completes the toolkit for controlling materials properties by means of selective excitation of lattice vibrations

Femtosecond formation dynamics of the spin Seebeck effect revealed by terahertz spectroscopy.

Understanding the transfer of spin angular momentum is essential in modern magnetism research. A model case is the generation of magnons in magnetic insulators by heating an adjacent metal film. Here, we reveal the initial steps of this spin Seebeck effect with <27 fs time resolution using terahertz spectroscopy on bilayers of ferrimagnetic yttrium iron garnet and platinum. Upon exciting the metal with an infrared laser pulse, a spin Seebeck current js arises on the same ~100 fs time scale on which the metal electrons thermalize. This observation highlights that efficient spin transfer critically relies on carrier multiplication and is driven by conduction electrons scattering off the metal-insulator interface. Analytical modeling shows that the electrons' dynamics are almost instantaneously imprinted onto js because their spins have a correlation time of only ~4 fs and deflect the ferrimagnetic moments without inertia. Applications in material characterization, interface probing, spin-noise spectroscopy and terahertz spin pumping emerge

Nonlinear terahertz control of the lead halide perovskite lattice

Lead halide perovskites (LHPs) have emerged as an excellent class of semiconductors for next-generation solar cells and optoelectronic devices. Tailoring physical properties by fine-tuning the lattice structures has been explored in these materials by chemical composition or morphology. Nevertheless, its dynamic counterpart, phonon-driven ultrafast material control, as contemporarily harnessed for oxide perovskites, has not yet been established. Here, we use intense THz electric fields to obtain direct lattice control via nonlinear excitation of coherent octahedral twist modes in hybrid CH3NH3PbBr3 and all-inorganic CsPbBr3 perovskites. These Raman-active phonons at 0.9 to 1.3 THz are found to govern the ultrafast THz-induced Kerr effect in the lowtemperature orthorhombic phase and thus dominate the phonon-modulated polarizability with potential implications for dynamic charge carrier screening beyond the Frohlich polaron. Our work opens the door to selective control of LHP's vibrational degrees of freedom governing phase transitions and dynamic disorder.ISSN:2375-254