Immersion Lithography with Using of Photostimulated Etching of Germanium Chalcogenide Films

The new effect of photo-stimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. The high-frequency diffraction gratings on germanium ChG - more environmentally acceptable compounds than traditionally used arsenic chalcogenides, were recorded by method of interference immersion photolithography with photoinduced etching. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3563

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist

Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon anisotropic etching was optimized, too. This technology has been used for the fabrication of high-quality diffraction gratings on Si (100) surface with symmetric triangular and trapezium grooves and two-dimentional periodic structures. Relief parameters and diffraction properties of the obtained structures and their dependences on etching time were determine

Топологія та фотоелектричні властивості гетероструктури p-GaTe – n-InSe

We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.Досліджені фотоелектричні властивості гетеропереходів p-GaTe – n-InSe, що сформовані методом механічного контакту окисленої пластини GaTe з ван-дер-ваальсовою поверхнею InSe. За допомогою АСМ-зображень встановлено, що на гетерограниці p-GaTe – n-InSe присутній тонкий діелектричний шар власного оксиду Ga2O3. Побудована енергетична зонна діаграма гетеропереходу. Встановлено, що гетероперехід p-GaTe – n-InSe володіє фоточутливістю в діапазоні 0,74 - 1,0 мкм

Recording of high efficiency diffraction gratings by He-Ne laser

The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching solution was chosen as a registering media. Angular and spectral dependencies of grating diffractive efficiency absolute values were measured. A comparison of fabricated gratings characteristics with corresponding parameters of gratings recorded on As₄₀Se₆₀ photoresist was carried out. Numericall simulation of groove profiles inherent to holographic gratings made in various experimental conditions was performed. Shown is that photoresists based on As₄₀S₂₀Se₄₀ are suitable for production of high quality holographic optical elements

Photostimulated etching of germanium chalcogenide films

The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. A possible mechanism for the photoinduced etching of ChG films has been discussed. The high-frequency diffraction gratings on germanium ChG – more environmentally acceptable compounds than traditionally used arsenic chalcogenides – were recorded using the method of interference immersion photolithography with photoinduced etching

Structure and properties of nanostructured NbN and Nb-Si-N films depending on the conditions of deposition: Experiment and theory

The first results of studying the phase–structural state, properties, sizes of nanograins, hardness, and microstresses in nanocomposite NbN and Nb–Si–N films are given. The investigated films were obtained by the method of the magnetron sputtering of Nb and Si targets onto silicon substrates at different negative potentials at the substrate (from 0 to –70 V), nitrogen pressures PN, and discharge powers at the targets. To determine the thermal stability of the films, they were annealed at 600, 800, and 1000°C in a vacuum.It was revealed for the first time that the NbN films have a twophase nanocomposite structure, which consists of δNbN (NaCl structure type) and α'NbN. The δNbN phase is also formed in Nb–Si–N films, where it is enveloped by an amorphous Si3N4 phase The hardness of the Nb–Si–N films reaches 46 GPa, which cor responds to the level of superhardness, while the hardness of the NbN nanocomposites is somewhat lower, but also very high (34 GPa). The experimental results for the Nb–Si–N films were explained based on the data obtained from the firstprinciples calculations of the NbN/SixNy heterostructures by the molecular dynamics method

Composite film structures containg ZnS, CdS nanoparticles prepared by MOC pyrolysis at low temperatures

New composite structures containing ZnS, CdS nanoparticles were prepared with bright light-blue colour of a luminescence. The structures were formed by spraying organic solution of zinc or cadmium ditiocarbamate onto substrates at temperatures within the range 40…120°C. It was established that the film emission maximum monotonously shifts into short-wave spectral region at the decreasing substrate temperature: from 590 nm (Ts = 120°C) to 500 nm (Ts = 50°C) for ZnS and from 510 nm (Ts = 120°C) to 450 nm (Ts = 40°C) for CdS. This fact can be explained by the quantum size effect: X-ray analysis has shown that researched films contain crystalline particles of 1…5 nm size

Reducing the environmental impact of surgery on a global scale: systematic review and co-prioritization with healthcare workers in 132 countries

Background Healthcare cannot achieve net-zero carbon without addressing operating theatres. The aim of this study was to prioritize feasible interventions to reduce the environmental impact of operating theatres. Methods This study adopted a four-phase Delphi consensus co-prioritization methodology. In phase 1, a systematic review of published interventions and global consultation of perioperative healthcare professionals were used to longlist interventions. In phase 2, iterative thematic analysis consolidated comparable interventions into a shortlist. In phase 3, the shortlist was co-prioritized based on patient and clinician views on acceptability, feasibility, and safety. In phase 4, ranked lists of interventions were presented by their relevance to high-income countries and low–middle-income countries. Results In phase 1, 43 interventions were identified, which had low uptake in practice according to 3042 professionals globally. In phase 2, a shortlist of 15 intervention domains was generated. In phase 3, interventions were deemed acceptable for more than 90 per cent of patients except for reducing general anaesthesia (84 per cent) and re-sterilization of ‘single-use’ consumables (86 per cent). In phase 4, the top three shortlisted interventions for high-income countries were: introducing recycling; reducing use of anaesthetic gases; and appropriate clinical waste processing. In phase 4, the top three shortlisted interventions for low–middle-income countries were: introducing reusable surgical devices; reducing use of consumables; and reducing the use of general anaesthesia. Conclusion This is a step toward environmentally sustainable operating environments with actionable interventions applicable to both high– and low–middle–income countries