Stimulated emission from ZnO thin films with high optical gain and low loss

Stimulated surface- and edge-emission were investigated for ZnO thin films grown epitaxially by pulsed laser deposition. The lasing threshold was 0.32 MW/cm2 for surface pumping and 0.5 MW/cm2 for edge pumping, which is significantly lower than thresholds observed previously. A modified variable stripe length method was used to measure the gain, which was 1369 cm-1 for N-band emission. Losses were measured using the shifting excitation spot method and values of 6.2 cm-1 and 6.3 cm-1 were found for the N-band and P-band, respectively. The measured gain and loss were the highest and lowest (respectively) ever reported for ZnO films

Wavelength-scale stationary-wave integrated Fourier-transform spectrometry

Spectrometry is a general physical-analysis approach for investigating light-matter interactions. However, the complex designs of existing spectrometers render them resistant to simplification and miniaturization, both of which are vital for applications in micro- and nanotechnology and which are now undergoing intensive research. Stationary-wave integrated Fourier-transform spectrometry (SWIFTS)-an approach based on direct intensity detection of a standing wave resulting from either reflection (as in the principle of colour photography by Gabriel Lippmann) or counterpropagative interference phenomenon-is expected to be able to overcome this drawback. Here, we present a SWIFTS-based spectrometer relying on an original optical near-field detection method in which optical nanoprobes are used to sample directly the evanescent standing wave in the waveguide. Combined with integrated optics, we report a way of reducing the volume of the spectrometer to a few hundreds of cubic wavelengths. This is the first attempt, using SWIFTS, to produce a very small integrated one-dimensional spectrometer suitable for applications where microspectrometers are essential

Molecular beam epitaxial growth and characterization of (100) HgSe on GaAs

In this paper, we present results on the first MBE growth of HgSe. The influence of the GaAs substrate temperature as well as the Hg and Se fluxes on the growth and the electrical properties has been investigated. It has been found that the growth rate is very low at substrate temperatures above 120°C. At 120°C and at lower temperatures, the growth rate is appreciably higher. The sticking coefficient of Se seems to depend inversely on the Hg/Se flux ratio. Epitaxial growth could be maintained at 70°C with Hg/Se flux ratios between lOO and ISO, and at 160°C between 280 and 450. The electron mobilities of these HgSe epilayers at room temperature decrease from a maximum value of 8.2 x 10^3 cm2 /V' s with increasing electron concentration. The concentration was found to be between 6xlO^17 and 1.6x10^19 cm- 3 at room temperature. Rocking curves from X-ray diffraction measurements of the better epilayers have a full width at half maximum of 5S0 arc sec

Application of VUV laser harmonic radiation to the measurement of porous silicon dielectric function

Vacuum ultra-violet (VUV) laser harmonics have been generated in a noble gas jet, which, combined with a standard spectrophotometer, have allowed measurements of the reflectance of porous silicon over a wide energy spectral range from 1 to 16 eV. Porous silicon dielectric function was, then, deduced from reflectance measurements by Kramers–Kronig analysis. Data are found to be in good agreement with those reported in literature, thus showing that laser harmonics represent a new, alternative, and suitable VUV source for optical characterisation of materials such as semiconductors and thin films