Micro–Raman Spectroscopy of Diamonds from JaH 054 and Sahara 98505 Ureilites, Statistic Research

In this paper Raman spectra of diamonds from two different ureilites, JaH 054 and Sahara 98505, were measured. Obtained results for both ureilites showed the Raman shift ranged between 1321 cm -1 and 1336 cm -1 for JaH 054 and between 1329 cm -1 and 1336 cm -1 for Sahara 98505. FWHM parameter (full width at half maximum) varied also in wide range especially for Sahara 98505. Raman imaging was done for JaH 054 sample and diamonds of different Raman shifts (1321 cm-1, 1328 cm-1, 1330 cm-1) were found in few tens (im sized area of carbon vein. Raman peaks of ureilitic diamonds were compared with literature data of laboratory diamonds produced under high pressure, under low pressure with MW PACVD method and with other ureilites. Presented research showed that even in highly shocked ureilites Raman shift versus FWHM parameter plots are similar with CVD diamonds for ureilites. However, the origin of diamonds in ureilites is not explained based on the obtained results, close coexistence of different diamonds in investigated ureilites suggests that the mechanism of diamond creation in meteorites was very complex and could be multi-step process

Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering

Erbium-doped low-dimensional Si films with different microstructures were grown by reactive magnetron sputtering on glass substrates by varying the deposition parameters. Their structure and chemical composition were studied by micro-Raman and Rutherford backscattering spectrometry, respectively. In this contribution the Erbium emission is studied as a function of nanocrystalline fraction and average crystal sizes and also as a function of the matrix chemical composition. We discuss the temperature dependence of the Er3+ emission as well as the possible explanations of the low Er active fraction.FCT (POCTI/CTM/39395) and INTAS Project #03-51-6486

Micro-Raman study of nanodiamonds from the Allende meteorite

We have studied the Raman spectroscopic signatures of nanodiamonds from the Allende meteorite in which some portions must be of presolar origin as indicated by the isotopic compositions of various trace elements. The spectra of the meteoritic nanodiamond show a narrow peak at 1326 cm‑1 and a broad band at 1590 cm‑1. Compared to the intensities of these peaks, the background fluorescence is relatively high. A significant frequency shift from 1332 to 1326 cm‑1, peak broadening, and appearance of a new peak at 1590 cm‑1 might be due to shock effects during formation of the diamond grains. Such changes may have several origins: an increase in bond length, a change in the electron density function or charge transfer, or a combination of these factors. However, Raman spectroscopy alone does not allow distinguishing between a shock origin of the nanodiamonds and formation by a CVD process as is favored by most workers

Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3

Here, we report on the characterization of {CdO/ZnO}m superlattice structures (SLs) grown by plasma assisted molecular beam epitaxy. The properties of as-grown and annealed SLs deposited on m-oriented sapphire were investigated by secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) in cathodoluminescence (CL) and energy dispersive X-ray modes. The deformation of the crystallographic structure of SLs was observed after rapid thermal annealing at 900{\deg}C in oxygen flow due to migration and segregation of Cd atoms. SIMS measurements revealed that the distributions of cadmium in the annealed samples depend on the thicknesses of the CdO and ZnO sublayers in the as grown superlattice structures. Depth-resolved CL measurements showed that shifting of the near band edge emission peaks is closely related to the Cd profiles measured with SIMS.Comment: 14 pages, 6 figure

Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium

Erbium doped micro- and nanocrystalline silicon thin films have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size, hydrogen and oxygen content have been obtained in order to investigate the effect of the microstructure and composition of matrix on the near IR range at 1.54 µm Er-related photoluminescence (PL) properties. The correlation between the optical properties and microstructural parameters of the films is investigated using spectroscopic ellipsometry. It is found that the luminescent properties of these composite films can be understood on the basis of the ellipsometric analysis that reveals the films heterogeneous structure, and that Er-related PL dominates in films with 1-3 nm sized Si nanocrystals embedded in a-Si:H.INTAS Project #03-51-6486Fundação para a Ciência e a Tecnologia Project POCTI/CTM/39395/200

Microstructures Manufactured in Diamond by Use of Laser Micromachining.

Different microstructures were created on the surface of a polycrystalline diamond plate (obtained by microwave plasma-enhanced chemical vapor deposition-MW PECVD process) by use of a nanosecond pulsed DPSS (diode pumped solid state) laser with a 355 nm wavelength and a galvanometer scanning system. Different average powers (5 to 11 W), scanning speeds (50 to 400 mm/s) and scan line spacings ("hatch spacing") (5 to 20 µm) were applied. The microstructures were then examined using scanning electron microscopy, confocal microscopy and Raman spectroscopy techniques. Microstructures exhibiting excellent geometry were obtained. The precise geometries of the microstructures, exhibiting good perpendicularity, deep channels and smooth surfaces show that the laser microprocessing can be applied in manufacturing diamond microfluidic devices. Raman spectra show small differences depending on the process parameters used. In some cases, the diamond band (at 1332 cm-1) after laser modification of material is only slightly wider and shifted, but with no additional peaks, indicating that the diamond is almost not changed after laser interaction. Some parameters did show that the modification of material had occurred and additional peaks in Raman spectra (typical for low-quality chemical vapor deposition CVD diamond) appeared, indicating the growing disorder of material or manufacturing of the new carbon phase