MOSQUITO NET WITH DINOTEFURAN AND PBO FOR KILLING MOSQUITOES, ESPECIALLY MOSQUITOES WITH PYRETHROID RESISTANCE

Dinotefuran and PBO is used for killing mosquitoes, as PBO increases the knockdown speed of Dinotefuran. The present invention relates to insecticidal mosquito nets containing PBO in combination with an insecticide. One of the methods to counteract malaria is the use of commercially available long lasting insecticidal mosquito nets for protecting humans from the bite of Anopheline mosquitoes that carry malaria. Whereas the typically applied pyrethroids have been used successfully as insecticides on such nets due to their rapid knockdown effect, there is currently a critical increased resistance to pyrethroids observed among those mosquitoes. One type of resistance is metabolic, which is counteracted by applying piperonyl butoxide (PBO) simultaneously with a pyrethroid to the mosquito when resting on the net. The PBO works as an inhibitor of the resistance associated metabolic enzymes and increases the mortality rate of the pyrethroid resistant mosquitoes. Another type of resistance is through a mutation at the target site of the pyrethroid, known as knockdown-resistance (kdr), which significantly slows the knockdown effect when the mosquito rests on the net and gives the mosquito the possibility to bite before paralysis (followed by death)

X-ray magnetic circular dichroism in (Ge,Mn) compounds: experiments and modeling

X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L$_{2,3}$ edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early \textit{ab initio} studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of sign in the L$_{3}$ XMCD spectrum of Mn in Ge$_3$Mn$_5$, which is observed in experiments. In this work we demonstrate that this disagreement is partially related to an underestimation of the exchange splitting of Mn 2$p$ core states within the local density approximation. It is shown that the change in sign experimentally observed is reproduced if the exchange splitting is accurately calculated within the Hartree-Fock approximation, while the final states can be still described by the DFT. This approach is further used to calculate the XMCD in different (Ge,Mn) compounds. It demonstrates that the agreement between experimental and theoretical spectra can be improved by combining state of the art calculations for the core and valence states respectively.Comment: 8 page

Interface-driven phase separation in multifunctional materials: the case of GeMn ferromagnetic semiconductor

We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-saturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A new class of materials, the $\alpha$ phases, is proposed to understand the formation of the coherent precipitates observed in the GeMn system. The interplay between formation and interface energies is analyzed for these phases and for the structures usually considered in the literature. The existence of the alpha phases is assessed with both theoretical and experimental arguments

Robust perpendicular exchange coupling in an ultrathin CoO/PtFe double layer: Strain and spin orientation

5 pagesInternational audienceWe report on the exchange coupling and magnetic properties of a strained ultrathin CoO/PtFe double layer with perpendicular magnetic anisotropy. The cobalt oxide growth by reactive molecular beam epitaxy on a Pt-terminated PtFe/Pt(001) surface gives rise to a hexagonal surface and a monoclinic distorted CoO 3 nm film at room temperature. This distorted ultrathin CoO layer couples with the PtFe(001) layer establishing a robust perpendicular exchange bias shift. Soft x-ray absorption spectroscopy provides a full description of the spin orientations in the CoO/PtFe double layer. The exchange bias shift is preserved up to the N'eel antiferromagnetic ordering temperature of TN = 293 K. This unique example of selfsame value for blocking and ordering temperatures, yet identical to the bulk ordering temperature, is likely related to the original strain-induced distortion and strengthened interaction between the two well-ordered spin layers

Robust perpendicular exchange coupling in an ultrathin CoO/PtFe double layer: strain and spin orientation

Sem informaçãoWe report on the exchange coupling and magnetic properties of a strained ultrathin CoO/PtFe double layer with perpendicular magnetic anisotropy. The cobalt oxide growth by reactive molecular beam epitaxy on a Pt-terminated PtFe/Pt(001) surface gives rise to a hexagonal surface and a monoclinic distorted CoO 3 nm film at room temperature. This distorted ultrathin CoO layer couples with the PtFe(001) layer establishing a robust perpendicular exchange bias shift. Soft x-ray absorption spectroscopy provides a full description of the spin orientations in the CoO/PtFe double layer. The exchange bias shift is preserved up to the Néel antiferromagnetic ordering temperature of TN = 293 K. This unique example of selfsame value for blocking and ordering temperatures, yet identical to the bulk ordering temperature, is likely related to the original strain-induced distortion and strengthened interaction between the two well-ordered spin layers.We report on the exchange coupling and magnetic properties of a strained ultrathin CoO/PtFe double layer with perpendicular magnetic anisotropy. The cobalt oxide growth by reactive molecular beam epitaxy on a Pt-terminated PtFe/Pt(001) surface gives rise to a hexagonal surface and a monoclinic distorted CoO 3 nm film at room temperature. This distorted ultrathin CoO layer couples with the PtFe(001) layer establishing a robust perpendicular exchange bias shift. Soft x-ray absorption spectroscopy provides a full description of the spin orientations in the CoO/PtFe double layer. The exchange bias shift is preserved up to the Néel antiferromagnetic ordering temperature of TN = 293 K. This unique example of selfsame value for blocking and ordering temperatures, yet identical to the bulk ordering temperature, is likely related to the original strain-induced distortion and strengthened interaction between the two well-ordered spin layers.881415Sem informaçãoSem informaçãoSem informaçã

Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers

Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be described as a patchwork of coalesced domains. Here, we report multi-scale and multistructural analysis on highly oriented epitaxial WS$_2$ and WSe$_2$ monolayers using scanning transmission electron microscopy (STEM) techniques. Characteristic domain junctions are first identified and classified based on the detailed atomic structure analysis using aberration corrected STEM imaging. Mapping orientation, polar direction and phase at the micrometer scale using four-dimensional STEM enabled to access the density and the distribution of the specific domain junctions. Our results validate a readily applicable process for the study of highly oriented epitaxial transition metal dichalcogenides, providing an overview of synthesized materials from large scale down to atomic scale with multiple structural information.Comment: 22 pages, 6 figures and Supplementary Informatio

Optical Orientation and Inverse Spin Hall Effect as Effective Tools to Investigate Spin-Dependent Diffusion

In this work we address optical orientation, a process consisting in the excitation of spin polarized electrons across the gap of a semiconductor. We show that the combination of optical orientation with spin-dependent scattering leading to the inverse spin-Hall effect, i.e., to the conversion of a spin current into an electrical signal, represents a powerful tool to generate and detect spin currents in solids. We consider a few examples where these two phenomena together allow addressing the spin-dependent transport properties across homogeneous samples or metal/semiconductor Schottky junctions

Spin-orbit torques and magnetization switching in (Bi,Sb)2Te3/Fe3GeTe2 heterostructures grown by molecular beam epitaxy

Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and a broad distribution of SOT magnitudes. In this work, we present a scalable approach to grow a full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining the charge-compensated TI (Bi,Sb)2Te3 with 2D FM Fe3GeTe2 (FGT). Harmonic magnetotransport measurements reveal that the SOT efficiency exhibits a non-monotonic temperature dependence and experiences a substantial enhancement with a reduction of the FGT thickness to 2 monolayers. Our study further demonstrates that the magnetization of ultrathin FGT films can be switched with a current density of Jc ∼ 1010 A/m2, with minimal device-to-device variations compared to previous investigations involving traditional FMs.This research has received funding from the European Union’s Horizon 2020 (EU H2020) research and innovation programme under grant agreement 881603 (Graphene Flagship) and was supported by the FLAG-ERA grant MNEMOSYN. ICN2 acknowledges support from the Spanish Ministry of Science and Innovation (MCIN) and Spanish Research Agency (AEI/10.13039/501100011033) under contracts PID2019-111773RB-I00, PCI2021-122035-2A, PID2022-143162OB-I00 (including FEDER funds), and Severo Ochoa CEX2021-001214-S. SPINTEC acknowledges support from the French ANR under contracts ANR-21-GRF1-0005-01 and ANR-20-CE24-0015 (ELMAX). T.G. and R.G. acknowledge support from EU H2020 programme under the Marie Skłodowska-Curie Grant Agreement Nos. 754510 and 840588 (GRISOTO, Marie Sklodowska-Curie fellowship), respectively, and JFS from MCIN/AEI/10.13039/50110001103 under contract RYC2019-028368-I.With funding from the Spanish government through the "Severo Ochoa Centre of Excellence" accreditation (CEX2021-001214-S).Peer reviewe