467 research outputs found
Programme d’autorééducation en séries fatigantes de contractions maximales dans la parésie faciale périphérique chronique
Cloning of the rice Xo1 resistance gene and interaction of the Xo1 protein with the defense-suppressing Xanthomonas effector Tal2h
The Xo1 locus in the heirloom rice variety Carolina Gold Select confers resistance to bacterial leaf streak and bacterial blight, caused by Xanthomonas oryzae pv. oryzicola and X. oryzae pv. oryzae, respectively. Resistance is triggered by pathogen-delivered transcription activator-like effectors (TALEs) independent of their ability to activate transcription and is suppressed by truncated variants called truncTALEs, common among Asian strains. By transformation of the susceptible variety Nipponbare, we show that one of 14 nucleotide-binding, leucine-rich repeat (NLR) protein genes at the locus, with a zinc finger BED domain, is the Xo1 gene. Analyses of published transcriptomes revealed that the Xo1-mediated response is more similar to those mediated by two other NLR resistance genes than it is to the response associated with TALE-specific transcriptional activation of the executor resistance gene Xa23 and that a truncTALE dampens or abolishes activation of defense-associated genes by Xo1. In Nicotiana benthamiana leaves, fluorescently tagged Xo1 protein, like TALEs and truncTALEs, localized to the nucleus. And endogenous Xo1 specifically coimmunoprecipitated from rice leaves with a pathogen-delivered, epitope-tagged truncTALE. These observations suggest that suppression of Xo1-function by truncTALEs occurs through direct or indirect physical interaction. They further suggest that effector coimmunoprecipitation may be effective for identifying or characterizing other resistance genes
Pauli spin blockade in CMOS double quantum dot devices
Silicon quantum dots are attractive candidates for the development of
scalable, spin-based qubits. Pauli spin blockade in double quantum dots
provides an efficient, temperature independent mechanism for qubit readout.
Here we report on transport experiments in double gate nanowire transistors
issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low
temperature the devices behave as two few-electron quantum dots in series. We
observe signatures of Pauli spin blockade with a singlet-triplet splitting
ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that
transitions which conserve spin are shown to be magnetic-field independent up
to B = 6 T.Comment: 5 pages , 4 figure
A CMOS silicon spin qubit
Silicon, the main constituent of microprocessor chips, is emerging as a
promising material for the realization of future quantum processors. Leveraging
its well-established complementary metal-oxide-semiconductor (CMOS) technology
would be a clear asset to the development of scalable quantum computing
architectures and to their co-integration with classical control hardware. Here
we report a silicon quantum bit (qubit) device made with an industry-standard
fabrication process. The device consists of a two-gate, p-type transistor with
an undoped channel. At low temperature, the first gate defines a quantum dot
(QD) encoding a hole spin qubit, the second one a QD used for the qubit
readout. All electrical, two-axis control of the spin qubit is achieved by
applying a phase-tunable microwave modulation to the first gate. Our result
opens a viable path to qubit up-scaling through a readily exploitable CMOS
platform.Comment: 12 pages, 4 figure
PP-039 High use rates of tobacco among adolescents in rural areas of the Indian state of Uttarakhand: The role of fathers
Impact d’un contrat d’autorééducation guidée sur la marche chez les patients hémiparétiques chroniques. Une étude prospective
Programming the assembly of carboxylic acid-functionalised hybrid polyoxometalates
We report here the straightforward synthesis and characterisation of a series Anderson-type hybrid
polyoxometalates in high yield, functionalised with carboxylic acid following the reaction of anhydride
precursors with the starting hybrid cluster ([n-N(C4H9)4]3[MnMo6O18((OCH2)3CNH2)2]). Seven new
structures have been obtained, five of which have acid-terminated ligands. Six of these structures have
been isolated with a yield higher than 80% with high purity. This reaction is limited by the bulkiness of the
anhydride used; this effect can be employed to selectively synthesise one isomer out of three other
possibilities. The acid groups and aromatic platforms attached to the clusters can act as building tools to
bridge several length scales and engineer molecular packing within the crystal structure. The presence of
acids should also change the hydrophilicity of the clusters, and therefore the way they interact with
hydrophilic surfaces. We also show a potential relationship between the acid group interaction in the
packing diagram and the cluster’s tendency to interact with a hydrophilic surface. In addition to reporting
a derived synthetic path to new acid-terminated Mn-Anderson-type hybrids, we describe here a new way
to program self-assembly motifs of these compounds in the crystal structure and at interfaces
Traditional Tai-Chi in patient education, from an ancient martial art to a new complementary method in physical medicine and rehabilitation – Rational and practical implementation in Paris public hospitals
Impact of Light-FRP (Functional restoration program) in a cohort of 47 patients with chronic low back pain
Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a 2 × n bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2 × 2 array and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, “floating” electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices, we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure
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