542 research outputs found
GaAs transistors formed by Be or Mg ion implantation
N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures
Optical waveguiding in proton-implanted GaAs
We have produced optical waveguides in n-type GaAs by implantation with 300-keV protons. The guiding is shown to be due to the elimination of charge carriers from the implanted region. Annealing of the waveguide leads to very large reductions in the 1.15-Āµ guided-wave absorption
Development of ion implantation techniques for microelectronics
Ion implantation process for fabricating active devices in high bandgap semiconductor materials for high temperature operatio
Channel Optical Waveguides and Directional Couplers in GaAs -- Imbedded and Ridged
Two-channel imbedded directional couplers were fabricated with proton implantation, yielding complete light transfer in 2 mm. Ridged channel guides were fabricated by ion-micromachining epitaxial layers, and a method of directional coupling was demonstrated
Integrated photonic qubit quantum computing on a superconducting chip
We study a quantum computing system using microwave photons in transmission
line resonators on a superconducting chip as qubits. We show that all control
necessary for quantum computing can be implemented by coupling to Josephson
devices on the same chip, and take advantage of their strong inherent
nonlinearities to realize qubit interactions. We analyze the gate error rate to
demonstrate that our scheme is realistic even for Josephson devices with
limited decoherence times. A conceptually innovative solution based on existing
technologies, our scheme provides an integrated and scalable approach to the
next key milestone for photonic qubit quantum computing.Comment: 5 pages, 3 figure
The Presence of Deep Levels in Ion Implanted Junctions
It has been found that ion implantation doping results in the generation and diffusion of defect species, forming deep trapping levels. The effect of these levels on the electrical characteristics of zincāimplanted GaAs diodes has been observed for the case of 70ākV implantation at 400Ā°C into substrates with nātype concentrations ranging from 1 Ć 10^16 to 1.8 Ć 10^18 atoms/cm^3. Capacitanceāvoltage measurements have indicated the presence of a semiāinsulating layer in the diodes, varying in thickness from 0.18 Ī¼ for the most heavily doped substrate to 2.7 Ī¼ for the lightest. Frequency dependence of the junction capacitance and power law variation of forward current vs voltage have also been observed and are attributed to deep levels
Efficacy of parental use of a tagging procedure to enhance their child\u27s sports performance training
Youth sports have become increasingly popular and competitive, resulting in parents seeking out coaching and training facilities that can improve their childrenās sports performance. Tagging offers a promising way to enhance sports training by incorporating immediate audible feedback successfully used in the field of Behavior Analysis that was once reserved only for professional athletes. However, it is unclear whether parents can effectively use a tagging procedure when provided with a breakdown of the specific steps to skills needed (e.g. task analysis) to enhance their childās training received at a paid training facility. The purpose of this study was to test the efficacy of parents using a tagging procedure to enhance baseball swing mechanics training of youth baseball players
Theory and fabrication of integrated optics directional couplers in GaAs
Channel optical waveguide couplers will be discussed, citing the fabrication of closely-spaced waveguides by proton implantation. Coupling was observed at 1.15Ī¼ and 1.06Ī¼
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