Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC)

In this work, a viable passive components and transmission media technology is presented for THz-Monolithic Integrated Circuits (THz-MIC). The developed technology is based on shielded microstrip (S-MS) employing a standard monolithic microwave integrated circuit compatible process. The S-MS transmission media uses a 5-μm layer of benzocyclobutene (BCB) on shielded metalized ground plates avoiding any substrate coupling effects. An insertion loss of less than 3 dB/mm was achieved for frequencies up to 750 GHz. To prove the effectiveness of the technology, a variety of test structures, passive components and antennas have been design, fabricated and characterized. High Q performance was demonstrated making such technology a strong candidate for future THz-MIC technology for many applications such as radar, communications, imaging and sensing

Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology On GaN-on-Low Resistivity Silicon Substrates

In this paper, we have demonstrated a viable microstrip array patch antenna technology for the first time on GaN-on-low resistivity silicon (LR-Si) substrates (ρ <; 40 Ω.cm) at H-band frequencies (220-325 GHz). The developed technology is compatible with standard MMIC technology with no requirement for high temperature processes. To mitigate the losses presented by the substrate and to enhance the performance of the integrated array antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold layer in addition to a layer of benzocyclobutene (BCB). The demonstrated 4×1 array integrated antenna showed a measured resonance frequency in agreement with our simulation at 0.27 THz; a measured S11 as low as -41 dB was obtained. A directivity, gain and radiation efficiency of 11.2 dB, 5.2 dB, and 20% respectively was observed from the 3D EM model for a 5 μm BCB inset. To the authors' knowledge, this is the first demonstration of a THz integrated microstrip array antenna for TMIC technology; this developed technology is promising for high performance III-V electronic material on low resistivity/high dielectric substrates

Noncrossing partitions and representations of quivers

We situate the noncrossing partitions associated to a finite Coxeter group within the context of the representation theory of quivers. We describe Reading's bijection between noncrossing partitions and clusters in this context, and show that it extends to the extended Dynkin case. Our setup also yields a new proof that the noncrossing partitions associated to a finite Coxeter group form a lattice. We also prove some new results within the theory of quiver representations. We show that the finitely generated, exact abelian, and extension-closed subcategories of the representations of a quiver $Q$ without oriented cycles are in natural bijection with the cluster-tilting objects in the associated cluster category. We also show these subcategories are exactly the finitely generated categories that can be obtained as the semistable objects with respect to some stability condition.Comment: Fixed typos, added an example, minor improvements to the expositio

Ventral extra-striate cortical areas are required for human visual texture segmentation

A patient (HJA) with bilateral occipital lobe damage to ventral cortical areas V2, V3 and V4 was tested on a texture segmentation task involving texture bar detection in an array of oriented lines. Performance detecting a target shape was assessed as the orientations of the background lines had increasing orientation noise. Control participants found the task easier when the background lines had the same orientation or only slightly shifted in orientation. HJA was poor with all backgrounds but particularly so when the background lines had the same or almost the same orientations. The results suggest that V1 alone is not sufficient to perform easy texture segmentation, even when the background of the display is a homogeneous texture. Ventral extra-striate cortical areas are needed in order to detect texture boundaries. We suggest that extra-striate visual areas enhance the borders between the target and background, while also playing a role in reducing the signal from homogeneous texture backgrounds

Medical students' perspective of maximum security psychiatric care

Aims and method. This study describes the effects of teaching medical students in a maximum security psychiatric setting. A questionnaire was distributed to students (n = 210) at the beginning and end of their third year. Results. Following the visit to the State Hospital significantly more students understood that maximum security psychiatric facilities are part of the National Health Service; that some serious offenders may require hospitalisation rather than imprisonment; that not everyone detained in such surroundings is actively violent or dangerous, or permanently detained. Twenty-three students considered forensic psychiatry to be a possible career option. Clinical implications. This study demonstrates that early exposure, even to such a specialised area of practice, can enhance the prospects of future recruitment. Attracting motivated, able and interested doctors is important in improving patient care.</p

Towards predictive modelling of near-edge structures in electron energy loss spectra of AlN based ternary alloys

Although electron energy loss near edge structure analysis provides a tool for experimentally probing unoccupied density of states, a detailed comparison with simulations is necessary in order to understand the origin of individual peaks. This paper presents a density functional theory based technique for predicting the N K-edge for ternary (quasi-binary) nitrogen alloys by adopting a core hole approach, a methodology that has been successful for binary nitride compounds. It is demonstrated that using the spectra of binary compounds for optimising the core hole charge ($0.35\,\mathrm{e}$ for cubic Ti$_{1-x}$Al$_x$N and $0.45\,\mathrm{e}$ for wurtzite Al$_x$Ga$_{1-x}$N), the predicted spectra evolutions of the ternary alloys agree well with the experiments. The spectral features are subsequently discussed in terms of the electronic structure and bonding of the alloys.Comment: 11 pages, 9 figures, 1 tabl

Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks

In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm. Devices with Pt and Ni based gates were studied and their leakage characteristics are compared. Maximum drain current IDS of 1 A/mm, maximum extrinsic transconductance gm ~203 mS/mm and on-resistance Ron 4.07 Ω mm for gate to drain distance LGD = 4 μm were achieved. Nearly ideal sub-threshold swing of 65.6 mV/dec was obtained for LGD = 14 μm. The use of Pt based gate metal stacks led to a two to three orders of magnitude gate leakage current decrease compared to Ni based gates. The influence of InAlN layer thickness on the transistor transfer characteristics is also discussed

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies despite suffering from a large density of defects. In this work we use cathodoluminescence (CL) hyperspectral imaging to study InGaN/GaN multiple quantum well (MQW) structures. Different types of trench defects with varying trench width, namely wide or narrow trenches forming closed loops and open loops, are investigated in the same hyperspectral CL measurement. A strong redshift (90 meV) and intensity increase of the MQW emission is demonstrated for regions enclosed by wide trenches, whereas those within narrower trenches only exhibit a small redshift (10 meV) and a slight reduction of intensity compared with the defect-free surrounding area. Transmission electron microscopy (TEM) showed that some trench defects consist of a raised central area, which is caused by an increase of about 40% in the thickness of the InGaN wells. The causes of the changes in luminescences are also discussed in relation to TEM results identifying the underlying structure of the defect. Understanding these defects and their emission characteristics is important for further enhancement and development of light-emitting diodes