Modeling of thin-film GaAs growth

A model of crystal growth is discussed that takes into account the processes of nucleation on the growing surface and also considers the processes of surface migration and desorption of adatoms. The solid on solid (SOS) model of crystal growth is represented by a rectangular array of integers where each integer represents the number of adatoms in a column perpendicular to some reference frame. The adatoms can represent atoms or molecules that are being stacked. This SOS method is used to simulate epitaxial growth of crystals. Output of the computer program developed can be graphic or quantitative

Modeling of thin-film GaAs growth

Efforts to produce a Monte Carlo computer program for the analysis of crystal growth are briefly discussed. A literature survey was conducted of articles relating to the subject. A list of references reviewed is presented

Long-term temperature effects on GaAs solar cells

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included

Photovoltaic conversion of laser power to electrical power

Photovoltaic laser to electric converters are attractive for use with a space-based laser power station. This paper presents the results of modeling studies for a silicon vertical junction converter used with a Nd laser. A computer code was developed for the model and this code was used to conduct a parametric study for a Si vertical junction converter consisting of one p-n junction irradiated with a Nd laser. These calculations predict an efficiency over 50 percent for an optimized converter

Long-term radiation effects on GaAs solar cell characteristics

This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage

Gallium arsenide (GaAs) solar cell modeling studies

Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed

Analysis of GaAs and Si solar energy hybrid systems

Various silicon hybrid systems are modeled and compared with a gallium arsenide hybrid system. The hybrid systems modeled produce electric power and also thermal power which can be used for heating or air conditioning. Various performance indices are defined and used to compare the system performance: capital cost per electric power out; capital cost per total power out; capital cost per electric power plus mechanical power; annual cost per annual electric energy; and annual cost per annual electric energy plus annual mechanical work. These performance indices indicate that concentrator hybrid systems can be cost effective when compared with present day energy costs

Modeling of thin-film GaAs growth

A solid Monte Carlo model is constructed for the simulation of crystal growth. The model assumes thermally accommodated adatoms impinge upon the surface during a delta time interval. The surface adatoms are assigned a random energy from a Boltzmann distribution, and this energy determines whether the adatoms evaporate, migrate, or remain stationary during the delta time interval. For each addition or migration of an adatom, potential wells are adjusted to reflect the absorption, migration, or desorption potential changes

Modeling of thin film GaAs growth

A potential scaling Monte Carlo model of crystal growth is developed. The model is a modification of the solid-on-solid method for studying crystal growth in that potentials at surface sites are continuously updated on a time scale reflecting the surface events of migration, incorporation and evaporation. The model allows for B on A type of crystal growth and lattice disregistry by the assignment of potential values at various surface sites. The surface adatoms are periodically assigned a random energy from a Boltzmann distribution and this energy determines whether the adatoms evaporate, migrate or remain stationary during the sampling interval. For each addition or migration of an adatom, the surface potentials are adjusted to reflect the adsorption, migration or desorption potential changes

Summary of mathematical models for a conventional and vertical junction photoconverter

The geometry and computer programming for mathematical models of a one-dimensional conventional photoconverter, a one-dimensional vertical junction photoconverter, a three-dimensional conventinal photoconverter, and a three-dimensional vertical junction solar cell are discussed