A study of wing body blending for an advanced supersonic transport

Increases in supersonic cruise lift drag ratio were sought at Mach numbers 2.2 and 2.7 using wing body planform and thickness blending. Constrained twist and camber optimization was performed in the presence of nacelles. Wing and fuselage thickness distributions were optimized for either minimum volume wave drag or minimum total pressure wave drag. The zero leading edge suction lift drag ratios were determined for three wing planforms. The magnitude of the effect of leading edge suction on attainable lift drag ratio was defined on one planform and estimation of available leading edge suction was made

Study of hypersonic propulsion/airframe integration technology

An assessment is done of current and potential ground facilities, and analysis and flight test techniques for establishing a hypersonic propulsion/airframe integration technology base. A mach 6 cruise prototype aircraft incorporating integrated Scramjet engines was considered the baseline configuration, and the assessment focused on the aerodynamic and configuration aspects of the integration technology. The study describes the key technology milestones that must be met to permit a decision on development of a prototype vehicle, and defines risk levels for these milestones. Capabilities and limitations of analysis techniques, current and potential ground test facilities, and flight test techniques are described in terms of the milestones and risk levels

Low-background performance of a monolithic InSb CCD array

A 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed

Bacterial hemolysins as virulence factors

No abstract availabl

Study of the performance and capability of the new ultra-fast 2 GSample/s FADC data acquisition system of the MAGIC telescope

In February 2007 the MAGIC Air Cherenkov Telescope for gamma-ray astronomy was fully upgraded with an ultra fast 2 GSamples/s digitization system. Since the Cherenkov light flashes are very short, a fast readout can minimize the influence of the background from the light of the night sky. Also, the time structure of the event is an additional parameter to reduce the background from unwanted hadronic showers. An overview of the performance of the new system and its impact on the sensitivity of the MAGIC instrument will be presented.Comment: Contribution to the 30th ICRC, Merida Mexico, July 2007 on behalf of the MAGIC Collaboratio

Cryogenic measurements of aerojet GaAs n-JFETs

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K