Single-Pixel Imaging in Space and Time with Optically-Modulated Free Electrons

Single-pixel imaging, originally developed in light optics, facilitates fast three-dimensional sample reconstruction, as well as probing with light wavelengths undetectable by conventional multi-pixel detectors. However, the spatial resolution of optics-based single-pixel microscopy is limited by diffraction to hundreds of nanometers. Here, we propose an implementation of single-pixel imaging relying on attainable modifications of currently available ultrafast electron microscopes in which optically-modulated electrons are used instead of photons to achieve sub-nanometer spatially- and temporally-resolved single-pixel imaging. We simulate electron beam profiles generated by interaction with the optical field produced by an externally programable spatial light modulator and demonstrate the feasibility of the method by showing that the sample image and its temporal evolution can be reconstructed using realistic imperfect illumination patterns. Electron single-pixel imaging holds strong potential for application in low-dose probing of beam-sensitive biological and molecular samples, including rapid screening during in-situ experiments.Comment: 25 pages, 4 figures, 3 supplementary figure

Mild cognitive impairment, from theory to practical intervention: “Camminando e leggendo … ricordo” (Walking and reading... I remember), an action plan. The Treviso Dementia (TREDEM) Registry

Dementia is one of the most disabling health conditions in older people. Increasing attention is paid to the preclinical phase of dementia and to the prevention programs to reduce the number of patients in the future. Aims of the current study are: a) to elucidate the relationships between the concepts of Mild Cognitive Impairment (MCI), and Cognitive Frailty (CF), in the light of the more recent literature and b) to present a model, called "Camminando e leggendo…ricordo" (CLR), as a practical experience of secondary prevention aimed at MCI older people.The CLR model is composed of a program of physical and reading activities in group to promote healthy lifestyles. Here we present a protocol to evaluate the effectiveness of our intervention model. A multidimensional geriatric assessment will be carried out. A questionnaire for the detection of frailty, disability and for the adherence to the Mediterranean diet will be administered. The Psychological General Well-Being Index (PGWBI) will be used to assess the quality of life.CLR is an intervention model for secondary prevention in MCI subjects. It is the description of a practical proposal aimed at improving lifestyles and reducing the risk of dementia.

Clinical features and lifestyle of patients with amyotrophic lateral sclerosis in Campania: brief overview of an Italian database

Background. Physical activity and occupational exposures appeared to play a relevant role in pathogenesis of amyotrophic lateral sclerosis (ALS), a neurodegenerative disease of unknown origin. Materials and methods. We aimed to make an overview of the clinical characteristics and life - style (occupation and sport) of a population of 395 patients with ALS from campania, in southern Italy. Results. ALS onset resulted anticipated of about 11 years in industry workers, whilst the more frequent site of onset among farmers was upper limbs. compared to non-athletes, athletes, particu- larly soccer players, showed a 7 years anticipation of ALS onset, with higher mortality after 5 years. Discussion and conclusions. We suggest that subjects genetically prone to abnormal response to hy - poxia during strenuous physical activity or exposed to neurotoxic agents, such as athletes, farmers or industry workers, might present increased risk to develop ALS. Future case-control and follow-up studies on our population should be implemented to deepen the present results. Riassunto (Caratteristiche cliniche e stile di vita di pazienti con sclerosi laterale amiotrofica in Campania: breve panoramica di un database italiano). Introduzione. Attivita fisica ed esposizione professionale a sostanze tossiche sembrano svolgere un ruolo rilevante nella patogenesi della sclerosi laterale amiotrofica (SLA), una malattia neurodegenerativa di origine sconosciuta. Materiali e metodi. ci siamo proposti di effettuare una panoramica delle caratteristiche cliniche e dello stile di vita (attivita lavorativa e sport) di una popolazione di 395 pazienti affetti da SLA provenienti dalla regione campania, in Italia meridionale. Risultati. L'insorgenza della SLA e risultata anticipata di circa 11 anni nei lavoratori dell'industria, mentre il sito piu frequente di insorgenza tra i contadini era caratterizzato dagli arti superiori. Rispetto ai non- sportivi, gli sportivi, soprattutto i calciatori, hanno mostrato un'anticipazione di 7 anni nell'insorgenza della SLA, con maggiore mortalita a 5 anni. Discussione e conclusioni. Abbiamo ipotizzato che i soggetti geneticamente predisposti a risposte anomale all'ipossia durante l'attivita fisica intensa o esposti ad agenti neurotossici, come gli sportivi, gli agricoltori o i lavoratori dell'industria, possano presentare un aumen - tato rischio di sviluppare la SLA. Futuri studi caso-controllo e di follow-up sulla nostra popolazione dovrebbero essere effettuati per approfondire i risultati attuali

Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe, as quantitatively verified by Scanning Auger Microscopy. The size distribution of the islands as a function of the Ge coverage has been studied by coupling atomic force microscopy scans with Auger spectro-microscopy data. Our observations are consistent with a physical scenario where island positioning is essentially driven by energetic factors, which predominate with respect to the local kinetics of diffusion, and the growth evolution mainly depends on the local density of Ge atoms

PTPA variants and impaired PP2A activity in early-onset parkinsonism with intellectual disability

The protein phosphatase 2A complex (PP2A), the major Ser/Thr phosphatase in the brain, is involved in a number of signalling pathways and functions, including the regulation of crucial proteins for neurodegeneration, such as alpha-synuclein, tau and LRRK2. Here, we report the identification of variants in the PTPA/PPP2R4 gene, encoding a major PP2A activator, in two families with early-onset parkinsonism and intellectual disability. We carried out clinical studies and genetic analyses, including genome-wide linkage analysis, whole-exome sequencing, and Sanger sequencing of candidate variants. We next performed functional studies on the disease-associated variants in cultured cells and knock-down of ptpa in Drosophila melanogaster. We first identified a homozygous PTPA variant, c.893T&gt;G (p.Met298Arg), in patients from a South African family with early-onset parkinsonism and intellectual disability. Screening of a large series of additional families yielded a second homozygous variant, c.512C&gt;A (p.Ala171Asp), in a Libyan family with a similar phenotype. Both variants co-segregate with disease in the respective families. The affected subjects display juvenile-onset parkinsonism and intellectual disability. The motor symptoms were responsive to treatment with levodopa and deep brain stimulation of the subthalamic nucleus. In overexpression studies, both the PTPA p.Ala171Asp and p.Met298Arg variants were associated with decreased PTPA RNA stability and decreased PTPA protein levels; the p.Ala171Asp variant additionally displayed decreased PTPA protein stability. Crucially, expression of both variants was associated with decreased PP2A complex levels and impaired PP2A phosphatase activation. PTPA orthologue knock-down in Drosophila neurons induced a significant impairment of locomotion in the climbing test. This defect was age-dependent and fully reversed by L-DOPA treatment. We conclude that bi-allelic missense PTPA variants associated with impaired activation of the PP2A phosphatase cause autosomal recessive early-onset parkinsonism with intellectual disability. Our findings might also provide new insights for understanding the role of the PP2A complex in the pathogenesis of more common forms of neurodegeneration.</p

INVESTIGATION OF Ge SURFACE DIFFUSION AND SiGe NANOSTRUCTURES BY SPECTRO-MICROSCOPY TECHNIQUES

L'admission au titre de Docteur de l'Ecole Polytechnique a été prononcée avec la mention : Très honorableSiGe nanostructures on crystalline Si substrates with (001) orientation are among the most studied system in condensed matter physics and nanoscience. This interest has been mainly driven by the important potential applications in opto and nano-electronic devices thanks to the improvement of the optical and electronic properties compared to bulk systems. These features come essentially from the possibility of engineering the strain field within the nanostructures using the lattice mismatch of ~ 4 % between Ge and Si and from the spatial confinement, capable of modifying the electronic band structure leading to an increase of the charge carrier mobility. It is obvious that these applications largely depend on the control of surface processes during the growth of the nanostructures, and their performance are strongly dependent on strain relaxation and dislocation injection. Besides the technological interest, the SiGe/Si(001) system has received much attention since it is also a model for understanding the fundamental processes occurring during 3D island formation and self-organization phenomena. In fact, the lattice mismatch between Ge and Si introduces a stress field which has dramatic effects on the growth process and is responsible for a number of structural and electronic phenomena. In particular, the stored elastic energy can be partially relieved by spontaneous formation of 3D objects of nanometric size on top of a pseudomorphic SiGe wetting layer. This growth mode, called Stranski-Krastanov (SK), is a way of easily forming self-assembled nanostructures, which can be used to obtain quantum confinement of charge carriers in nanoelectronics device applications. In recent years, considerable efforts have been devoted to the growth of hetero-epitaxial SiGe nanostructures with well controlled size, shape and positioning, and with defined stoichiometry and strain state. However, some aspects still need to be addressed for a complete understanding of this system, including: (i) the competition between kinetic and thermodynamic factors for island formation, (ii) the mechanisms governing the relative growth of individual nanostructures, (iii) the interplay between SiGe intermixing and strain relaxation mechanisms. In the present work, we carry out an experimental investigation of the relationship between morphology, elemental composition, strain state and electronic structure of self-assembled and lithographically defined SiGe nanostructures by means of several spectro-microscopy techniques. The Si and Ge diffusion dynamics and the self-organization phenomena during the growth of SiGe islands have been studied by Scanning Auger Microscopy (SAM) and Atomic Force Microscopy (AFM). Micro-Raman, SAM and Scanning Transmission Electron Microscopy coupled with Electron Energy Loss Spectroscopy (STEM-EELS) techniques have been used for the investigation of the interplay between strain relaxation mechanisms and SiGe intermixing in self-assembled islands. The effects of strain and composition on the electronic band structure in lithographically defined SiGe nanostructures, in layout very close to those used in prototype devices, have been characterized with nanoscale spatial resolution joining information from Tip Enhanced Raman Spectroscopy (TERS), nanofocused X-Ray Diffraction (XRD) and Energy-Filtered PhotoElectron Emission Microscopy (PEEM). The thesis is conceptually divided in two main parts: the first, to which belong Chapters 1, 2 and 3, deals with the experimental investigation of the Ge surface diffusion and of the self-organization phenomena of SiGe islands grown in a bottom-up approach; the second, including Chapters 4 and 5, is based on the experimental characterization of the strain state and of the strain-induced effects on the electronic band structure of lithographically defined SiGe nanostructures obtained in a top-down approach Chapter 1 presents an overview on the basic processes occurring during hetero-epitaxial growth of thin solid films. In the Chapter 2 the surface diffusion of Ge on a clean and C covered Si(001) surface promoted by annealing at high temperatures in UHV of pure Ge stripes is experimentally investigated by means of in-situ Scanning Auger Microscopy. The influence of a controlled carbon coverage on the Ge surface diffusion is quantitatively studied, showing that the diffusion coefficient presents a strong dependence on carbon coverage (see Fig. 1(a)). Chapter 3 deals with the experimental investigation of the growth process of self-assembled SiGe islands on Si(001) (see Fig. 1(b)). From the size and density evolution exhibited by the nucleated islands, we propose a scenario where the island growth is essentially driven by kinetic factors within a diffusion limited regime. Finally, we investigated the interplay among SiGe intermixing and plastic relaxation, showing that the surface thermal diffusion growth method leads to the formation of coherent islands (dislocation-free), as shown in Fig. 1(c), larger than those attainable by MBE and CVD. Chapter 4 presents the mapping with nanoscale resolution of strain, composition, local work function and valence band structure of lithographically defined SiGe embedded nano-stripes using TERS and Energy-Filtered PEEM (see Fig. 1(d) showing the Ge concentration mapping of the nano-stripes as obtained by PEEM analysis). In Chapter 5 are presented the first results of a direct characterization of the strain state of lithographically defined SiGe nano-ridges using the recently developed nanofocused XRD technique. The work presented in this thesis is the outcome of an experimental PhD research project developed at the Politecnico di Milano (Milano, Italy) in co-tutorship with the École Polytechnique (Paris, France) and the French Atomic Energy Commission (CEA-Saclay, France). SAM and AFM have been performed at Department of Physics of the Politecnico di Milano. Micro-Raman Spectroscopy has been carried out at the Materials Science Department of the Università Milano-Bicocca. PEEM measurements have been realized at CEA and during two standard experimental runs at the TEMPO beamline of SOLEIL Synchrotron (France). TERS and preliminary TEM analysis have been performed at the École Polytechnique, while more extensive TEM and STEM-EELS measurements have been developed at IMM-CNR in Catania. The nano-XRD experiment has been carried out during a standard experimental run at ID13 beamline of the European Synchrotron Radiation Facility (ESRF). The close collaboration with the laboratory L-NESS in Como made available the set of the lithographically-defined investigated samples. The experimental results have been exploited in close collaboration with a theory group at the Materials Science Department of the Università Milano-Bicocca for a deeper insight into the atomic level mechanisms during island growth process

Spatio-temporal shaping of a free-electron wave function via coherent light-electron interaction

The past decade has witnessed a quantum revolution in the field of computation, communication and materials investigation. A similar revolution is also occurring for free-electron based techniques, where the classical treatment of a free electron as a point particle is being surpassed toward a deeper exploitation of its quantum nature. Adopting familiar concepts from quantum optics, several groups have demonstrated temporal and spatial shaping of a free-electron wave function, developing theoretical descriptions of light-modulated states, as well as predicting and confirming fascinating phenomena as attosecond self-compression and orbital angular momentum transfer from light to electrons. In this review, we revisit the milestones of this development and the several methods adopted for imprinting a time-varying phase modulation on an electron wave function using properly synthesized ultrafast light fields, making the electron an exquisitely selective probe of out-of-equilibrium phenomena in individual atomic/nanoscale systems. We discuss both longitudinal and transverse phase manipulation of free-electrons, where coherent quantized exchanges of energy, linear momentum and orbital angular momentum mediating the electron-light coupling are key in determining their spatio-temporal redistribution. Spatio-temporal phase shaping of matter waves provides new routes toward image-resolution enhancement, selective probing, dynamic control of materials, new quantum information methods, and exploration of electronic motions and nuclear phenomena. Emerging as a new field, electron wave function shaping allows adopting familiar quantum optics concepts in composite-particle experiments and paves the way for atomic, ionic and nuclear wave function engineering with perspective applications in atomic interferometry and direct control of nuclear processes

Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100)

We investigated the surface diffusion and island nucleation of Ge on Si(100) in presence of a submonolayer coverage of carbon as surfactant by using scanning Auger microscopy and atomic force microscopy. Ge stripes have been deposited and lithographically etched on a Si substrate and used as sources for the surface diffusion of Ge promoted by annealing at 600, 650, and 700 °C. The diffusion coefficient has been determined by fitting the postannealing coverage profiles measured by Auger microscopy with a one-dimensional continuous model. The carbon coverage has been spatially modulated on a single sample, allowing the measurement of the diffusion coefficient as a function of the C thickness at 600 °C. We show that the reduction in the diffusion coefficient while increasing the surfactant coverage is described by a linear dependence of the diffusion activation energy on the C coverage. This dependence is discussed in terms of the chemical interactions among Si, C, and Ge, of the surface roughness and the local strain field induced by the C surfactant. Spontaneous nucleation of SiGe islands coexists with the continuous surface diffusion of Ge. The transition of the island nucleation as a function of the carbon coverage is observed to be continuous from the Stranski-Krastanov mode to the Volmer-Weber regime. We propose a consistent scenario correlating diffusion and nucleation parameters within a diffusion limited growth regime and show the existence of a threshold for C coverage below which no effect is observed