Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM

This article has been accepted for publication by IEEE "Navarro Moral, C.; et al. Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM. IEEE Transactions on Electron Devices, 64(11): 4486-4491 (2017). DOI: 10.1109/TED.2017.2751141(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works."The Z2-FET operation as capacitorless DRAM is analyzed using advanced 2-D TCAD simulations for IoT applications. The simulated architecture is built based on actual 28-nm fully depleted silicon-on-insulator devices. It is found that the triggering mechanism is dominated by the front-gate bias and the carrier’s diffusion length. As in other FB-DRAMs, the memory window is defined by the ON voltage shift with the stored body charge. However, the Z2-FET’s memory state is not exclusively defined by the inner charge but also by the reading conditions

Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain

International audienceA measurement setup for the characterization of very fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with and without a guard ring implemented respectively in a 65nm and 130nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted

Transit Time Extraction Method for ESD Protection Diodes Model

International audienceNowadays, even though ESD protection diodes are clearly the most used protection devices in I/O cells their behavior is a major problem during a very fast transient. In fact the forward and reverse recovery effects lead respectively to a high over voltage during their triggering and a sustained voltage during the turn-off. Those phenomena depend on the time needed by minority carriers to flow or evacuate the neutral region (the well). This time, which is the transit time of the diode, is also a key parameter of the diode transient behavior. In this presentation a simple extraction method is described in order to extract the transit time of an ESD protection diode. Then, the impact of the junction shape on the transit time will be demonstrated

Local ESD protection structure based on Silicon Controlled Rectifier achieving very low overshoot voltage

International audienceThis paper presents a new local ESD protection structure. This structure is based on static triggered SCR and realized in a 45nm CMOS technology node. This protection achieves very low static triggering voltage, low on-resistance, low DC leakage current for off configurations. This new structure is latch-up free and fail safe

Properties and mechanisms of Z2-FET at variable temperature

International audienceThis paper presents a systematic study of Z2-FET (Zero Subthreshold Swing and Zero Impact Ionization transistor) fabricated in advanced Fully Depleted Silicon On Insulator (FDSOI) 28 nm technology with Ultra-Thin Body and Buried Oxide (UTBB). It is a recent sharp-switching device that achieves remarkable performance in terms of leakage current and triggering control. The device features an extremely sharp on-switch, an adjustable triggering voltage (VON), and is considered for Electro-Static Discharge (ESD) protection. The operation principle relies on the modulation of electrons and holes injection barriers. Experimental results show the effect of low and high temperature on the output characteristics, triggering voltage and leakage current. Previous article in issu

A Physics-Based Compact Model for ESD Protection Diodes under Very Fast Transients

International audienceIn this paper, a complete analysis of the physical phenomena occurring in ESD protection diodes during very fast transients is investigated. Thanks to TCAD simulations and transient characterization, it is highlighted that the mobility degradation effect must be taken into account in addition to the conductivity modulation effect for modeling diode behavior during triggering. Finally, a new physics-based compact model of ESD protection diodes is proposed, demonstrated and validated under very fast transient events in the CDM time domain

16ème groupe de travail sur les thons tropicaux

Recent resolutions of the Indian Ocean Tuna Commission (IOTC) have been implemented to improve scientific knowledge on the effects of drifting fish aggregating devices (DFADs) through increased data collection and reporting. Here, we report information on DFADs collected from three distinct data sources to describe the use of DFADs and buoys by the French PS fleet of the Indian Ocean over the last decade. First, archives of buoy purchase orders during 2002-2014 were provided by fishing companies to give insight into the historical use of DFADs. Data show an homogeneity of the numbers of buoys available to each purse seiner and a steady increase of about 10 buoys per year per vessel, from 50-60 in the early 2000s to 200 in 2013. Second, information derived from satellite transmission data was made available for the period 2010-2013 based on quarterly reports that are produced by buoy supplier companies on a vessel basis. Data show an overall relative stability of the number of French buoys having been used to monitor floating objects (FOBs) during 2010-2013. Each French purse seiner operating in the IO has been monitoring a mean number of 90 FOBs (predominated by DFADs) on a quarterly basis during 2010- 2013, with some variability between vessels and seasons. The total number of FOBs monitored for the French component of the European PS fleet would be around 1,200 in the recent years. Third, an extended version of the PS logbooks has been implemented since January 2013 to include information on DFADs and associated buoys. Although incomplete for some vessels, data collection has been improving over time and several skippers now report a large amount of information on DFADs on an operation basis. This information appears complementary to the two other sources of aggregated data and allows identifying the areas of DFAD deployments for instance

New Insights in Z2-FET Mechanisms at Variable Temperature

session 4: Steep slope devicesInternational audienceThe Z2-FET (Zero Impact Ionization and Subthreshold Slope FET), a recent sharp switching devicewith zero subthreshold swing and zero impact ionization, is considered for Electro-Static Discharge (ESD)protection of Fully Depleted SOI (FDSOI) circuits. We study the impact of low and high temperature on thedevice performance, showing its effect on the output characteristics, triggering voltage (VON) and leakagecurrent (ILeak)

Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior

International audienceInnovative Ultra-Thin Body and Buried Oxide FDSOI protections (BBC-T and Z2-FET) are characterized and analyzed in order to assess the CDM time domain behavior. In addition to static (leakage and triggering) control, it is found that front and back gate coupling is a very efficient way to improve the transient responses of the proposed devices