Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior

Authors
Publication date
7 September 2014
Publisher
'Institute of Electrical and Electronics Engineers (IEEE)'

Abstract

International audienceInnovative Ultra-Thin Body and Buried Oxide FDSOI protections (BBC-T and Z2-FET) are characterized and analyzed in order to assess the CDM time domain behavior. In addition to static (leakage and triggering) control, it is found that front and back gate coupling is a very efficient way to improve the transient responses of the proposed devices

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