Weak Localization and Negative Magnetoresistance in Wurtzite-type Crystals

We have developed a theory of the negative magnetoresistance due to the weak localization in uniaxial wurtzite-type crystals, in which the spin splitting of the conduction band is linear in the wave vector, unlike the cubic ${\rm A_3 B_5}$ crystals. Unlike earlier theories, we take into account the correlation between the electron motion in spin and co-ordinate spaces. It is shown that as a result of this correlation the magnetoresistance depends on the orientation of the magnetic field with respect to the main axis of the crystal even if the effective mass is isotropic. The new theory allows to accurately determine the value of the spin splitting constant in uniaxial crystals.Comment: 5 pages, RevTeX, 2 PostScript figure

A Renormalization-Group approach to the Coulomb Gap

The free energy of the Coulomb Gap problem is expanded as a set of Feynman diagrams, using the standard diagrammatic methods of perturbation theory. The gap in the one-particle density of states due to long-ranged interactions corresponds to a renormalization of the two-point vertex function. By collecting the leading order logarithmic corrections we have derived the standard result for the density of states in the critical dimension, d=1. This method, which is shown to be identical to the approach of Thouless, Anderson and Palmer to spin glasses, allows us to derive the strong-disorder behaviour of the density of states. The use of the renormalization group allows this derivation to be extended to all disorders, and the use of an epsilon-expansion allows the method to be extended to d=2 and d=3. We speculate that the renormalization group equations can also be derived diagrammatically, allowing a simple derivation of the crossover behaviour observed in the case of weak disorder.Comment: 16 pages, LaTeX. Diagrams available on request from [email protected]. Changes to figure 4 and second half of section

Collective edge modes in fractional quantum Hall systems

Over the past few years one of us (Murthy) in collaboration with R. Shankar has developed an extended Hamiltonian formalism capable of describing the ground state and low energy excitations in the fractional quantum Hall regime. The Hamiltonian, expressed in terms of Composite Fermion operators, incorporates all the nonperturbative features of the fractional Hall regime, so that conventional many-body approximations such as Hartree-Fock and time-dependent Hartree-Fock are applicable. We apply this formalism to develop a microscopic theory of the collective edge modes in fractional quantum Hall regime. We present the results for edge mode dispersions at principal filling factors $\nu=1/3,1/5$ and $\nu=2/5$ for systems with unreconstructed edges. The primary advantage of the method is that one works in the thermodynamic limit right from the beginning, thus avoiding the finite-size effects which ultimately limit exact diagonalization studies.Comment: 12 pages, 9 figures, See cond-mat/0303359 for related result

Effect of bulk inversion asymmetry on the Datta-Das transistor

A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.Comment: 4 pages, Revtex4, 4 EPS figure

Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well

The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular attention is paid to the experimental extraction of phase-breaking and spin-orbit scattering times when weak anti- localization effects are prominent. Compared with metals and low mobility semiconductors the characteristic magnetic field $B_{tr} = \hbar/4eD \tau$ in high mobility samples is very small and the experimental dependencies of the interference effects extend to fields several hundreds of times larger. Fitting experimental results under these conditions therefore requires theories valid for arbitrary magnetic field. It was found, however, that such a theory was unable to fit the experimental data without introducing an extra, empirical, scale factor of about 2. Measurements in tilted magnetic fields and as a function of temperature established that both the weak localization and the weak anti-localization effects have the same, orbital origin. Fits to the data confirmed that the width of the low field feature, whether a weak localization or a weak anti-localization peak, is determined by the phase-breaking time and also established that the universal (negative) magnetoresistance observed in the high field limit is associated with a temperature independent spin-orbit scattering time.Comment: 13 pages including 10 figure

Anisotropic transport in the two-dimensional electron gas in the presence of spin-orbit coupling

In a two-dimensional electron gas as realized by a semiconductor quantum well, the presence of spin-orbit coupling of both the Rashba and Dresselhaus type leads to anisotropic dispersion relations and Fermi contours. We study the effect of this anisotropy on the electrical conductivity in the presence of fixed impurity scatterers. The conductivity also shows in general an anisotropy which can be tuned by varying the Rashba coefficient. This effect provides a method of detecting and investigating spin-orbit coupling by measuring spin-unpolarized electrical currents in the diffusive regime. Our approach is based on an exact solution of the two-dimensional Boltzmann equation and provides also a natural framework for investigating other transport effects including the anomalous Hall effect.Comment: 10 pages, 1 figure included. Discussion of experimental impact enlarged; error in calculation of conductivity contribution corrected (cf. Eq. (A14)), no changes in qualitative results and physical consequence

Magnetotransport in Two-Dimensional Electron Systems with Spin-Orbit Interaction

We present magnetotransport calculations for homogeneous two-dimensional electron systems including the Rashba spin-orbit interaction, which mixes the spin-eigenstates and leads to a modified fan-chart with crossing Landau levels. The quantum mechanical Kubo formula is evaluated by taking into account spin-conserving scatterers in an extension of the self-consistent Born approximation that considers the spin degree of freedom. The calculated conductivity exhibits besides the well-known beating in the Shubnikov-de Haas (SdH) oscillations a modulation which is due to a suppression of scattering away from the crossing points of Landau levels and does not show up in the density of states. This modulation, surviving even at elevated temperatures when the SdH oscillations are damped out, could serve to identify spin-orbit coupling in magnetotransport experiments. Our magnetotransport calculations are extended also to lateral superlattices and predictions are made with respect to 1/B periodic oscillations in dependence on carrier density and strength of the spin-orbit coupling.Comment: 8 pages including 8 figures; submitted to PR

Suppression of non-Poissonian shot noise by Coulomb correlations in ballistic conductors

We investigate the current injection into a ballistic conductor under the space-charge limited regime, when the distribution function of injected carriers is an arbitrary function of energy F_c(epsilon). The analysis of the coupled kinetic and Poisson equations shows that the injected current fluctuations may be essentially suppressed by Coulomb correlations, and the suppression level is determined by the shape of F_c(epsilon). This is in contrast to the time-averaged quantities: the mean current and the spatial profiles are shown to be insensitive to F_c(epsilon) in the leading-order terms at high biases. The asymptotic high-bias behavior for the energy resolved shot-noise suppression has been found for an arbitrary (non-Poissonian) injection, which may suggest a new field of investigation on the optimization of the injected energy profile to achieve the desired noise-suppression level.Comment: extended version 4 -> 8 pages, examples and figure adde

Suppression of non-Poissonian shot noise by Coulomb correlations in ballistic conductors

We investigate the current injection into a ballistic conductor under the space-charge limited regime, when the distribution function of injected carriers is an arbitrary function of energy F_c(epsilon). The analysis of the coupled kinetic and Poisson equations shows that the injected current fluctuations may be essentially suppressed by Coulomb correlations, and the suppression level is determined by the shape of F_c(epsilon). This is in contrast to the time-averaged quantities: the mean current and the spatial profiles are shown to be insensitive to F_c(epsilon) in the leading-order terms at high biases. The asymptotic high-bias behavior for the energy resolved shot-noise suppression has been found for an arbitrary (non-Poissonian) injection, which may suggest a new field of investigation on the optimization of the injected energy profile to achieve the desired noise-suppression level.Comment: extended version 4 -> 8 pages, examples and figure adde

The Parallel Magnetoconductance of Interacting Electrons in a Two Dimensional Disordered System

The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the electrons, while long-range interactions enhance localization. On careful examination of the transport properties, we reach the conclusion that it does not show a two dimensional metal insulator transition driven by interactions. A parallel magnetic field leads to enhanced resistivity, which saturates once the electrons become fully spin polarized. The strength of the magnetic field for which the resistivity saturates decreases as electron density goes down. Thus, the numerical calculations capture some of the features seen in recent experimental measurements of parallel magnetoconductance.Comment: 10 pages, 6 figure