Machine-Learning Predicted User Interfaces

Generally, the present disclosure is directed to customizing user interfaces to a particular user. In particular, in some implementations, the systems and methods of the present disclosure can include or otherwise leverage one or more machine-learned models to predict the likelihood a user will interact with a user interface element and/or the importance of the content of the user interface element based on user data such as, for example, user interaction with the user interface

Optical characterization of AlAsSb digital alloy and random alloy on GaSb

III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. Recently, digital alloy growth by molecular beam epitaxy has been widely adopted in preference to conventional random alloy growth because of the extra degree of control offered by the ordered alloying. In this article, we provide a comparative study of the optical characteristics of AlAsSb alloys grown lattice-matched to GaSb using both techniques. The sample grown by digital alloy technique showed stronger photoluminescence intensity, narrower peak linewidth, and larger carrier activation energy than the random alloy technique, indicating an improved optical quality with lower density of non-radiative recombination centers. In addition, a relatively long carrier lifetime was observed from the digital alloy sample, consistent with the results obtained from the photoluminescence study

Coulomb effect inhibiting spontaneous emission in charged quantum dot

We investigate the emission dynamics of InAs/GaAs quantum dots (QDs) coupled to an InGaAs quantum well in a tunnel injection scheme by means of time-resolved photoluminescence. Under high-power excitation we observe a redshift in the QD emission of the order of 20 meV. The optical transition intensity shows a complex evolution, where an initial plateau phase is followed by an increase in intensity before a single-exponential decay. We attribute this behavior to the Coulomb interactions between the carriers in a charged QD and corroborate the experimental results with both a rate equation model and self-consistent eight-band k.p calculations. (C) 2010 American Institute of Physics. (doi:10.1063/1.3484143

Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon

Energy-sensitive GaSb/AlAsSb separate absorption and multiplication avalanche photodiodes for X-Ray and gamma-ray detection

Demonstrated are antimony‐based (Sb‐based) separate absorption and multiplication avalanche photodiodes (SAM‐APDs) for X‐ray and gamma‐ray detection, which are composed of GaSb absorbers and large bandgap AlAsSb multiplication regions in order to enhance the probability of stopping high‐energy photons while drastically suppressing the minority carrier diffusion. Well‐defined X‐ray and gamma‐ray photopeaks are observed under exposure to 241Am radioactive sources, demonstrating the desirable energy‐sensitive detector performance. Spectroscopic characterizations show a significant improvement of measured energy resolution due to reduced high‐peak electric field in the absorbers and suppressed nonradiative recombination on surfaces. Additionally, the GaSb/AlAsSb SAM‐APDs clearly exhibit energy response linearity up to 59.5 keV with a minimum full‐width half‐maximum of 1.283 keV. A further analysis of the spectroscopic measurement suggests that the device performance is intrinsically limited by the noise from the readout electronics rather than that from the photodiodes. This study provides a first understanding of Sb‐based energy‐sensitive SAM‐APDs and paves the way to achieving efficient detection of high‐energy photons for X‐ray and gamma‐ray spectroscopy

Complex emission dynamics of type-II GaSb/GaAs quantum dots

Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies. (C) 2009 American Institute of Physics. (10.1063/1.3202419

Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

The electro-optic properties of strained GaInAsSb/GaAs quantum wells (QWs) are investigated. A single QW p-i-n sample was grown by molecular beam epitaxy with antimony (Sb) pre-deposition technique. We numerically predict and experimentally verify a strong quantum confined Stark shift of 40 nm. We also predict a fast absorption recovery times crucial of high-speed optoelectronic devices mainly due to strong electron tunneling and thermionic emission. Predicted recovery times are corroborated by bias and temperature dependent time-resolved photoluminescence measurements indicating (<= 30 ps) recovery times. This makes GaInAsSb QW an attractive material particularly for electroabsorption modulators and saturable absorbers. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4775371

Epistasis between MicroRNAs 155 and 146a during T Cell-Mediated Antitumor Immunity

An increased understanding of antitumor immunity is necessary for improving cell-based immunotherapies against human cancers. Here, we investigated the roles of two immune system-expressed microRNAs (miRNAs), miR-155 and miR-146a, in the regulation of antitumor immune responses. Our results indicate that miR-155 promotes and miR-146a inhibits interferon γ (IFNγ) responses by T cells and reduces solid tumor growth in vivo. Using a double-knockout (DKO) mouse strain deficient in both miR-155 and miR-146a, we have also identified an epistatic relationship between these two miRNAs. DKO mice had defective T cell responses and tumor growth phenotypes similar to miR-155^(−/−) mice. Further analysis of the T cell compartment revealed that miR-155 modulates IFNγ expression through a mechanism involving repression of Ship1. Our work reveals critical roles for miRNAs in the reciprocal regulation of CD4^+ and CD8^+ T cell-mediated antitumor immunity and demonstrates the dominant nature of miR-155 during its promotion of immune responses

Implication of a novel multiprotein Dam1p complex in outer kinetochore function

Dam1p, Duo1p, and Dad1p can associate with each other physically and are required for both spindle integrity and kinetochore function in budding yeast. Here, we present our purification from yeast extracts of an ∼245 kD complex containing Dam1p, Duo1p, and Dad1p and Spc19p, Spc34p, and the previously uncharacterized proteins Dad2p and Ask1p. This Dam1p complex appears to be regulated through the phosphorylation of multiple subunits with at least one phosphorylation event changing during the cell cycle. We also find that purified Dam1p complex binds directly to microtubules in vitro with an affinity of ∼0.5 μM. To demonstrate that subunits of the Dam1p complex are functionally important for mitosis in vivo, we localized Spc19–green fluorescent protein (GFP), Spc34-GFP, Dad2-GFP, and Ask1-GFP to the mitotic spindle and to kinetochores and generated temperature-sensitive mutants of DAD2 and ASK1. These and other analyses implicate the four newly identified subunits and the Dam1p complex as a whole in outer kinetochore function where they are well positioned to facilitate the association of chromosomes with spindle microtubules