4,169 research outputs found

    Business Critical: Understanding a Company’s Current and Desired Stages of Corporate Responsibility Maturity

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    It’s been a while since the Corporate Responsibility profession took stock of its collective wisdom on where we have been, and where we are going on running businesses responsibly. Meanwhile hardly a week goes by without a helpful suggestion from the outside world on how an organisation should improve its economic value, social usefulness and environmental efficiency; and it is very easy to spot businesses that get their social, environmental and economic decisions out of balance: these organisations hit the headlines seemingly within nanoseconds. On the upside, businesses are increasingly taking an approach that builds an Environmental, Social and Governance (ESG) premium into the core economic valuation. This is achieved by those organisations which bring in a diverse set of views to inform risk and reputation management activities, and to build a research and development pipeline for the future. This is managing both the negative and the positive social, environmental and economic impacts

    Variable-gravity anti-vortex and vapor-ingestion-suppression device

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    A liquid propellant management device for placement in a liquid storage tank adjacent an outlet of the storage tank to substantially reduce or eliminate the formation of a dip and vortex in the liquid of the tank, as well as prevent vapor ingestion into the outlet, as the liquid drains out through the outlet. The liquid propellant management device has a first member adapted to suppress the formation of a vortex of a liquid exiting the storage tank. A plate is affixed generally perpendicular to the first member, wherein the plate is adapted to suppress vapor ingestion into the outlet by reducing a dip in a surface level of the liquid leaving the tank. A second member is affixed to the second side of the plate. The second member ensures that the plate is wet with liquid and assists in positioning bubbles away from the outlet

    Novel metallic and insulating states at a bent quantum Hall junction

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    A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.Comment: 5 pages, 4 figures, text + figs revised for clarit

    Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

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    Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp 90o90^{\rm o} angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.Comment: 3 pages, 4 figures, latest version accepted to AP

    Initial Public Offerings of Ballplayers

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    As a field study of choice under uncertainty, we examine baseball teams' investments in amateur players. Though most prospects fail to deliver any return on their multi-million dollar signing bonuses, returns on the minority who succeed easily offset these losses: the expected annual yield on the median first-round draftee is 33 percent. However, the pattern of returns is inconsistent with market efficiency. Yields are lower for high schoolers than collegians (27 percent vs. 43 percent), lower for pitchers than position players (24 percent vs. 41 percent), decline for later round long-shots, and may be negative under competitive bidding.Market efficiency; Bounded rationality; Prospect theory; Winner’s curse

    Vertical quantum wire realized with double cleaved-edge overgrowth

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    A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.Comment: 4 pages, 4 figure

    Probing the Electrostatics of Integer Quantum Hall Edges with Momentum-Resolved Tunnel Spectroscopy

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    We present measurements of momentum-resolved magneto-tunneling from a perpendicular two-dimensional (2D) contact into integer quantum Hall (QH) edges at a sharp edge potential created by cleaved edge overgrowth. Resonances in the tunnel conductance correspond to coincidences of electronic states of the QH edge and the 2D contact in energy-momentum space. With this dispersion relation reflecting the potential distribution at the edge we can directly measure the band bending at our cleaved edge under the influence of an external voltage bias. At finite bias we observe significant deviations from the flat-band condition in agreement with self-consistent calculations of the edge potential

    Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings

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    We measure an anomalous magnetoresistance peak within the lowest Landau level (nu = 1) minimum of a two-dimensional hole system on (110) GaAs. Self-consistent calculations of the valence band mixing show that the two lowest spin-index Landau levels anticross in a perpendicular magnetic field B consistent with where the experimental peak is measured, Bp. The temperature dependence of the anomalous peak height is interpreted as an activated behavior across this anticrossing gap. Calculations of the spin polarization in the lowest Landau levels predict a rapid switch from about -3/2 to +3/2 spin at the anticrossing. The peak position Bp is shown to be affected by the confinement electrostatics, and the utility of a tunable anticrossing position for spintronics applications is discussed.Comment: 4 pages, 4 figure

    Fluctuation-Driven Molecular Transport in an Asymmetric Membrane Channel

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    Channel proteins, that selectively conduct molecules across cell membranes, often exhibit an asymmetric structure. By means of a stochastic model, we argue that channel asymmetry in the presence of non-equilibrium fluctuations, fueled by the cell's metabolism as observed recently, can dramatically influence the transport through such channels by a ratchet-like mechanism. For an aquaglyceroporin that conducts water and glycerol we show that a previously determined asymmetric glycerol potential leads to enhanced inward transport of glycerol, but for unfavorably high glycerol concentrations also to enhanced outward transport that protects a cell against poisoning.Comment: REVTeX4, 4 pages, 3 figures; Accepted for publication in Phys. Rev. Let
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