Recrystallization of epitaxial GaN under indentation

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.Comment: 10 pages, 3 figures

BGRID: A block-structured grid generation code for wing sections

The operation of the BGRID computer program is described for generating block-structured grids. Examples are provided to illustrate the code input and output. The application of a fully implicit AF (approximation factorization)-based computer code, called TWINGB (Transonic WING), for solving the 3D transonic full potential equation in conservation form on block-structured grids is also discussed

How Much Does Money Matter in a Direct Democracy?

The fine-structure splitting of quantum confined InxGa1-x Nexcitons is investigated using polarization-sensitive photoluminescence spectroscopy. The majority of the studied emission lines exhibits mutually orthogonal fine-structure components split by 100-340 mu eV, as measured from the cleaved edge of the sample. The exciton and the biexciton reveal identical magnitudes but reversed sign of the energy splitting.Original Publication:Supaluck Amloy, Y T Chen, K F Karlsson, K H Chen, H C Hsu, C L Hsiao, L C Chen and Per-Olof Holtz, Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons, 2011, PHYSICAL REVIEW B, (83), 20, 201307.http://dx.doi.org/10.1103/PhysRevB.83.201307Copyright: American Physical Societyhttp://www.aps.org

Quantum multiparty key distribution protocol without use of entanglement

We propose a quantum key distribution (QKD) protocol that enables three parties agree at once on a shared common random bit string in presence of an eavesdropper without use of entanglement. We prove its unconditional security and analyze the key rate.Comment: 8 pages, no figur

Surface optical Raman modes in InN nanostructures

Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN,such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to the optical phonons allowed by symmetry; A1, E1 and E2(high) modes, two additional Raman peaks are observed around 528 cm-1 and 560 cm-1 for these nanostructures. Calculations for the frequencies of surface optical (SO) phonon modes in InN nanostructures yield values close to those of the new Raman modes. A possible reason for large intensities for SO modes in these nanostructures is also discussed.Comment: 13 pages, 4 figures, Submitted in Journa