12 research outputs found

    Etude énergétique et approche pédagogique d'un suiveur de photovoltaïque un axe

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    International audienc

    Etude sur la detection et la localisation de defauts en temps reel dans les elements de puissance d'une association convertisseur-machin

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    SIGLEAvailable from INIST (FR), Document Supply Service, under shelf-number : T 84278 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

    Estimation of integrated photovoltaics potential for solar city bus in different climate conditions in Europe

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    5th International Symposium on Hydrogen Energy and Energy Technologies (HEET 2022) 18/11/2022 - 19/11/2022 Osaka, JapanInternational audienceVehicle integrated photovoltaics have an ongoing interest. Studies on the benefits from vehicle solar roof which take into account all the possible losses and the monthly variation in different climate conditions, are required. Therefore, we developed a software for the simulation of useful PV energy and mileage covered by the PV in vehicles with solar roofs. This software can take into account different use profiles and different characteristics of the vehicles and of the PV system. Focusing on city bus, simulations allow seeing that many parameters can influence the outputs of the model, mainly: the geographic location (first order), the shading losses (second order), the electric architecture (third order) and the battery saturation (fourth order).At mid-life of the vehicle, with the integrated PV (projections of the technology at 2030), a city bus can collect up to 8571 kWh annual useful PV energy, thus up to 9739 km annual mileage covered by VIPV. This represents up to 24 % of the total distance. For the best month, it can get up to 47 km/day. For average Europe case, with high shading losses, a city bus can collect down to 3805 kWh per year and so only 3506 km annual mileage covered by VIPV.The upgrade of the technology from 2022 to 2030 induces an improvement of the useful PV energy and annual mileage covered by VIPV from 32 % to 56 % for city bus depending on the use case.Based on the annual distance covered by VIPV, an evaluation of the different stages of the life cycle analysis of solarized vehicle solutions is possible. The objective is to know the environmental balance of the solutions over the entire life cycle of the vehicles. The carbon footprint of the different solutions is highly variable and depends primarily on the carbon content of the electricity mix in which the vehicle is marketed, but also on the amount of solar irradiance in the considered area. Therefore, there is no simple general trend. Nevertheless, we have drawn some conclusions. With a low carbon module, for a city bus, neutral to very large gains in term of avoided CO2 are expected (up to 28 T CO2_2 on 20 years lifetime)

    Design, implementation and characterization of an integrated current sensing in GaN HEMT device by using the current-mirroring technique

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    International audienceBased on wide bandgap devices (WBG) characterization constraints, this work presents the design, implementation and characterization of an integrated current sensor in a GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) by using the current-mirroring technique. Two HEMTs are implemented in this design; the compromised between the size ratio of these two transistors in the current-mirroring circuit and the sensitivity of the sensor are taken into account on the device design phase. In the implementation phase, the auxiliary components are optimized for the operation of the sensor, and then the circuit with the integrated current sensing in GaN power device is characterized with a high temperature double pulse test method, up to 175°C

    Design, implementation and characterization of an integrated current sensing in GaN HEMT device by using the current-mirroring technique

    No full text
    International audienceBased on wide bandgap devices (WBG) characterization constraints, this work presents the design, implementation and characterization of an integrated current sensor in a GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) by using the current-mirroring technique. Two HEMTs are implemented in this design; the compromised between the size ratio of these two transistors in the current-mirroring circuit and the sensitivity of the sensor are taken into account on the device design phase. In the implementation phase, the auxiliary components are optimized for the operation of the sensor, and then the circuit with the integrated current sensing in GaN power device is characterized with a high temperature double pulse test method, up to 175°C
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