671 research outputs found
Silicon photomultiplier arrays - a novel photon detector for a high resolution tracker produced at FBK-irst, Italy
A silicon photomultiplier (SiPM) array has been developed at FBK-irst having
32 channels and a dimension of 8.0 x 1.1 mm^2. Each 250 um wide channel is
subdivided into 5 x 22 rectangularly arranged pixels. These sensors are
developed to read out a modular high resolution scintillating fiber tracker.
Key properties like breakdown voltage, gain and photon detection efficiency
(PDE) are found to be homogeneous over all 32 channels of an SiPM array. This
could make scintillating fiber trackers with SiPM array readout a promising
alternative to available tracker technologies, if noise properties and the PDE
are improved
A Scintillating Fiber Tracker With SiPM Readout
We present a prototype for the first tracking detector consisting of 250
micron thin scintillating fibers and silicon photomultiplier (SiPM) arrays. The
detector has a modular design, each module consists of a mechanical support
structure of 10mm Rohacell foam between two 100 micron thin carbon fiber skins.
Five layers of scintillating fibers are glued to both top and bottom of the
support structure. SiPM arrays with a channel pitch of 250 micron are placed in
front of the fibers. We show the results of the first module prototype using
multiclad fibers of types Bicron BCF-20 and Kuraray SCSF-81M that were read out
by novel 32-channel SiPM arrays from FBK-irst/INFN Perugia as well as
32-channel SiPM arrays produced by Hamamatsu. A spatial resolution of 88 micron
+/- 6 micron at an average yield of 10 detected photons per minimal ionizig
particle has been achieved.Comment: 5 pages, 7 figures, submitted as proceedings to the 11th Topical
Seminar on Innovative Particle and Radiation Detectors (IPRD08
Influence of the Leakage Current on the Performance of Large Area Silicon Drift Detectors
In this paper we investigate the influence of the leakage current on the performance of Silicon Drift Detectors. First, analytical considerations are given in order to highlight the problems, specific for this type of detector, that emerge with leakage current. Then the obtained results are compared with the data of laboratory measurements. Aiming at a mass production of SDDs for the Inner Tracking System of the ALICE experiment at LHC we propose a simple and fast measurement for a preliminary selection before passing to a detailed acceptance test
Radiation Damage Studies of Silicon Photomultipliers
We report on the measurement of the radiation hardness of silicon
photomultipliers (SiPMs) manufactured by
Fondazione Bruno Kessler in Italy (1 mm and 6.2 mm), Center of
Perspective Technology and Apparatus in Russia (1 mm and 4.4 mm), and
Hamamatsu Corporation in Japan (1 mm). The SiPMs were irradiated using a
beam of 212 MeV protons at Massachusetts General Hospital, receiving fluences
of up to protons per cm with the SiPMs at operating
voltage. Leakage currents were read continuously during the irradiation. The
delivery of the protons was paused periodically to record scope traces in
response to calibrated light pulses to monitor the gains, photon detection
efficiencies, and dark counts of the SiPMs. The leakage current and dark noise
are found to increase with fluence. Te leakage current is found to be
proportional to the mean square deviation of the noise distribution, indicating
the dark counts are due to increased random individual pixel activation, while
SiPMs remain fully functional as photon detectors. The SiPMs are found to
anneal at room temperature with a reduction in the leakage current by a factor
of 2 in about 100 days.Comment: 35 pages, 25 figure
SiPM and front-end electronics development for Cherenkov light detection
The Italian Institute of Nuclear Physics (INFN) is involved in the
development of a demonstrator for a SiPM-based camera for the Cherenkov
Telescope Array (CTA) experiment, with a pixel size of 66 mm. The
camera houses about two thousands electronics channels and is both light and
compact. In this framework, a R&D program for the development of SiPMs suitable
for Cherenkov light detection (so called NUV SiPMs) is ongoing. Different
photosensors have been produced at Fondazione Bruno Kessler (FBK), with
different micro-cell dimensions and fill factors, in different geometrical
arrangements. At the same time, INFN is developing front-end electronics based
on the waveform sampling technique optimized for the new NUV SiPM. Measurements
on 11 mm, 33 mm, and 66 mm NUV SiPMs
coupled to the front-end electronics are presentedComment: In Proceedings of the 34th International Cosmic Ray Conference
(ICRC2015), The Hague, The Netherlands. All CTA contributions at
arXiv:1508.0589
Verificação da capacidade de aprendizado de atividades motoras especĂficas envolvendo membros superiores e inferiores em pacientes portadores de disfunção cerebelar
Measurements and tests on FBK silicon sensors with an optimized electronic design for a CTA camera
In October 2013, the Italian Ministry approved the funding of a Research &
Development (R&D) study, within the "Progetto Premiale TElescopi CHErenkov made
in Italy (TECHE)", devoted to the development of a demonstrator for a camera
for the Cherenkov Telescope Array (CTA) consortium. The demonstrator consists
of a sensor plane based on the Silicon Photomultiplier (SiPM) technology and on
an electronics designed for signal sampling. Preliminary tests on a matrix of
sensors produced by the Fondazione Bruno Kessler (FBK-Trento, Italy) and on
electronic prototypes produced by SITAEL S.p.A. will be presented. In
particular, we used different designs of the electronics in order to optimize
the output signals in terms of tail cancellation. This is crucial for
applications where a high background is expected, as for the CTA experiment.Comment: 5 pages, 6 figures; Proceedings of the 10th Workshop on Science with
the New Generation of High-Energy Gamma-ray experiments (SciNeGHE) -
PoS(Scineghe2014)00
NUV-HD SiPMs with metal-filled trenches
In this paper we present the performance of a new SiPM that is sensitive to blue light and features narrow metal-filled trenches placed in the area around the single-photon avalanche diodes (SPADs) that allow an almost complete suppression the internal optical crosstalk. In particular, we show the benefits of this technological upgrade in terms of electro-optical SiPM performance when compared to the previous technology which had only a partial optical screening between the SPADs. The most relevant effect is the much higher bias voltage that can be applied to the new device before the noise diverges. This allows to optimize and improve both the photon detection efficiency and the single-photon time resolution. We also coupled the SiPMs to LYSO scintillators to verify the performance for possible application in Positron-Emission Tomography. Thanks to the better electro-optical features we were able to measure an improved coincidence time resolution. Furthermore, the optimal voltage operation region is substantially larger, making this SiPM more suitable for real system application where thousands of channels have to provide stable and reproducible performance
Beam test results of the irradiated Silicon Drift Detector for ALICE
The Silicon Drift Detectors will equip two of the six cylindrical layers of
high precision position sensitive detectors in the ITS of the ALICE experiment
at LHC. In this paper we report the beam test results of a SDD irradiated with
1 GeV electrons. The aim of this test was to verify the radiation tolerance of
the device under an electron fluence equivalent to twice particle fluence
expected during 10 years of ALICE operation.Comment: 6 pages,6 figures, to appear in the proceedings of International
Workshop In high Multiplicity Environments (TIME'05), 3-7 October 2005,
Zurich,Switzerlan
Development of Silicon PhotoMultipliers at FBK-irst
We report on the development of Silicon PhotoMultipliers (SiPM) at the Fondazione Bruno Kessler (FBK)-irst (Trento, Italy) in the framework of a collaboration with INFN. Device geometry and technology are resumed, and selected
results from the characterization of SiPM prototypes from three production batches are reported, including static, dynamic, and noise properties, as well as photodetection efficiency
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