A Revised Model for the Formation of Disk Galaxies: Low Spin and Dark-Halo Expansion

We use observed rotation velocity-luminosity (VL) and size-luminosity (RL) relations to single out a specific scenario for disk galaxy formation in the LCDM cosmology. Our model involves four independent log-normal random variables: dark-halo concentration c, disk spin lam_gal, disk mass fraction m_gal, and stellar mass-to-light ratio M/L_I. A simultaneous match of the VL and RL zero points with adiabatic contraction requires low-c halos, but this model has V_2.2~1.8 V_vir (where V_2.2 and V_vir are the circular velocity at 2.2 disk scale lengths and the virial radius, respectively) which will be unable to match the luminosity function (LF). Similarly models without adiabatic contraction but standard c also predict high values of V_2.2/V_vir. Models in which disk formation induces an expansion rather than the commonly assumed contraction of the dark-matter halos have V_2.2~1.2 V_vir which allows a simultaneous fit of the LF. This may result from non-spherical, clumpy gas accretion, where dynamical friction transfers energy from the gas to the dark matter. This model requires low lam_gal and m_gal values, contrary to naive expectations. However, the low lam_gal is consistent with the notion that disk galaxies predominantly survive in halos with a quiet merger history, while a low m_gal is also indicated by galaxy-galaxy lensing. The smaller than expected scatter in the RL relation, and the lack of correlation between the residuals of the VL and RL relations, respectively, imply that the scatter in lam_gal and in c need to be smaller than predicted for LCDM halos, again consistent with the idea that disk galaxies preferentially reside in halos with a quiet merger history.Comment: 28 pages, 16 figures, ApJ accepted, minor changes from unpublished version, uses emulateapj.cls, high-resolution version available at http://www.ucolick.org/~dutton/65200/hi-res-version/ms.dutton.v2_hr.p

Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier

We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurations of the source and drain of Ni. As a possibility, it seems to indicate the existence of a magnetic state at the Si/oxide interface. The average spin diffusion length obtained is of 650 nm approximately. Results are compared to the window of resistances that seems to exist between the tunnel barrier resistance and two threshold resistances but the spin transfer seems to work in the range and outside the two thresholds

Linearization of Cohomology-free Vector Fields

We study the cohomological equation for a smooth vector field on a compact manifold. We show that if the vector field is cohomology free, then it can be embedded continuously in a linear flow on an Abelian group

Determination of the (3x3)-Sn/Ge(111) structure by photoelectron diffraction

At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3) one, upon cooling below 200 K. The photoemission spectra of the Sn 4d electrons from the (3x3)-Sn/Ge(111) surface present two components which are attributed to inequivalent Sn atoms in T4 bonding sites. This structure has been explored by photoelectron diffraction experiments performed at the ALOISA beamline of the Elettra storage ring in Trieste (Italy). The modulation of the intensities of the two Sn components, caused by the backscattering of the underneath Ge atoms, has been measured as a function of the emission angle at fixed kinetic energies and viceversa. The bond angle between Sn and its nearest neighbour atoms in the first Ge layer (Sn-Ge1) has been measured by taking polar scans along the main symmetry directions and it was found almost equivalent for the two components. The corresponding bond lengths are also quite similar, as obtained by studying the dependence on the photoelectron kinetic energy, while keeping the photon polarization and the collection direction parallel to the Sn-Ge1 bond orientation (bond emission). A clear difference between the two bonding sites is observed when studying the energy dependence at normal emission, where the sensitivity to the Sn height above the Ge atom in the second layer is enhanced. This vertical distance is found to be 0.3 Angstroms larger for one Sn atom out of the three contained in the lattice unit cell. The (3x3)-Sn/Ge(111) is thus characterized by a structure where the Sn atom and its three nearest neighbour Ge atoms form a rather rigid unit that presents a strong vertical distortion with respect to the underneath atom of the second Ge layer.Comment: 10 pages with 9 figures, added reference

La alfabetización matemática y su relación con el intercambio comercial, la escolaridad elemental y el trabajo

En este artículo abordo algunos aspectos de la adquisición del conocimiento y las herramientas matemáticas elementales en diferentes contextos: la educación básica de personas jóvenes y adultas, algunas actividades laborales que no requieren una escolaridad importante, y la experiencia de intercambio comercial que se desarrolla en la cotidianeidad. Mi intención es contribuir a la reflexión sobre los aportes de la educación básica, la experiencia cotidiana y el trabajo a la alfabetización matemática de las personas. Para ilustrar mis afirmaciones, tomo como centro la noción de proporcionalidad. Esta noción cruza la educación básica, es fundamento de la matemática más avanzada y, también, es instrumento de trabajo e interacción en distintos ámbitos de la actividad social. Adelanto que, en México, el sistema educativo para jóvenes y adultos incumple en buena medida un compromiso fundamental: lograr que las personas se apropien de herramientas simbólicas que potencien su pensamiento y su forma de vinculación con el mundo. En cambio, algunas actividades laborales y comerciales contribuyen al desarrollo de conocimientos y habilidades útiles para resolver problemas matemáticos que el propio contexto plantea. Este tipo de aprendizaje, no debe empero olvidarse, es un aprendizaje situado cuyos límites conviene también señalar

Angular dependence of the bulk nucleation field Hc2 of aligned MgB2 crystallites

Studies on the new MgB2 superconductor, with a critical temperature Tc ~ 39 K, have evidenced its potential for applications although intense magnetic relaxation effects limit the critical current density, Jc, at high magnetic fields. This means that effective pinning centers must be added into the material microstructure, in order to halt dissipative flux movements. Concerning the basic microscopic mechanism to explain the superconductivity in MgB2, several experimental and theoretical works have pointed to the relevance of a phonon-mediated interaction, in the framework of the BCS theory. Questions have been raised about the relevant phonon modes, and the gap and Fermi surface anisotropies, in an effort to interpret spectroscopic and thermal data that give values between 2.4 and 4.5 for the gap energy ratio. Preliminary results on the anisotropy of Hc2 have shown a ratio, between the in-plane and perpendicular directions, around 1.7 for aligned MgB2 crystallites and 1.8 for epitaxial thin films. Here we show a study on the angular dependence of Hc2 pointing to a Fermi velocity anisotropy around 2.5. This anisotropy certainly implies the use of texturization techniques to optimize Jc in MgB2 wires and other polycrystalline components.Comment: 10 pages + 4 Figs.; Revised version accepted in Phys. Rev.

Uso do ricinoleato de gliceril polietilenoglicol como coadjuvante na peletização de ração.

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