- Publication venue
- Publication date
- 05/10/2005
- Field of study
No full text
- Publication venue
- Publication date
- 30/11/2005
- Field of study
No full text
- Publication venue
- Publication date
- 02/01/2008
- Field of study
No full text
- Publication venue
- Publication date
- 04/01/2006
- Field of study
No full text
- Publication venue
- Publication date
- 03/06/2009
- Field of study
No full text
- Publication venue
- Publication date
- 11/01/2006
- Field of study
No full text
- Publication venue
- Publication date
- 01/01/2004
- Field of study
No full text利用LPCVD方法,在厚表层Si(SOL≈0.5μm)柔性绝缘衬底(SOI)(001)上外延生长出了可与硅衬底上外延晶体质量相比拟的SiC/SOI,表明SOI是一种很有潜力的柔性衬底. Raman 光谱结果表明SiC/SOI外延层比SiC/Si外延层有更大的残存应力,对此从理论上进行了解释.利用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电镜(SEM)和喇曼散射光谱(RAM)技术研究了外延材料的晶体结构、界面性质和应变情况
No full text
