Fabrication of High-efficiency ZnS:Er ACTFELD

对掺饵硫化锌交流电致发光薄膜器件 (ACTFELD) ,根据载流子隧穿势垒层会获得能量增益 ,提高激发效率的原理 ,通过改变常规ZnS :ErACTFELD的基本结构 ,研制出多阻挡层器件。实验证实 ,这种多阻挡层器件具有高的阈值电压和高的电致发光亮度。Efficient ZnS:Er alternating current thin film electroluminescent devices(ACTFELDs) have been fabricated based on the mechanism that the energy gain and excitation efficiency of charge carriers can be increased by means of barrier layer tunnelling along with the modification of the conventional structure.The experimental results indicate that the multi-barrier layer devices offer a higher threshold voltage and greater electroluminescence brightness.福建省自然科学基金资助项目!(A96 0 0 7

Study on Microstructure and Surface Characteristicsof Zinc Sulfide Thin Films

对射频磁控溅射法制备的掺铒硫化锌薄膜，运用X射线衍射和X射线光电子能谱技术，获得微晶薄膜的微结构和表面构态信息，揭示了电致发光薄膜的表面构态对激发态的影响。The zinc sulfide thin film devices doped with erbium prepared byRFMS are studied.The information of microstructure and surface structure statesof the crystallite film is obtained by XRD and XPS methods.The effects of the surface structure states of the elcctroluminescent thin film on exciting states are discussed.国家自然科学基金;福建省自然科学基

粉末电致发光的新应用──一种光神经器件

近年来，人工神经网格与神经网络计算机的研究在世界范围内已形成一个热点，本文通过对电致发光材料的各种特性的讨论，分析了固体化平板电致发光作为一种光神经器件的一些特点，指出了它在神经网络实现中有很好的应用前景

Microstructural Dissection of Zinc Sulfide Thin Films

用X射线衍射和X射线光电子能谱技术，对分舟热蒸发法研制的掺铒（Er）硫化锌直流电致发光薄膜及硫化锌粉料进行剖析，获得薄膜表面及粉料的构态信息，讨论了影响微晶薄膜质量的主要因素。The zinc sulfide DCEL thin films doped with erbium, prepared by thermal evaporation with two boats, are analysed with XRD and XPS technologies. The structure state information of ZnS powder and thin film surface is obtained. The factors influencing on the quality of microcrystalline thin films are discussed as well.福建省自然科学基

Properties of Indium Tin Oxide Thin Film Deposited by RF Magnetron Sputtering at Room Temperature

报道透明导电膜不加衬底温度、无需沉积后的退火工艺、用射频磁控溅射沉积氧化铟、锡（ITO）薄膜获得电阻率3x10-4Ω·CM，在可见光区平均透光率84%的优良性能.用扫描电子显微镜和X射线衍射法研究了ITO薄膜的结晶形貌和晶体结构The purpose of this letter is to demonstrate a simple technique For the deposition of Sn doped In 2O 3 (ITO) thin Film by RF magnetron sputter without temperature control of substrate and without annealing.The Film has resistivity as low as 3×10 -4 Ω·cm and optical transmittance of about 84 % in the visible range.The crystal shape and structure of the Film are studied by the scan electronmicroscope and the x ray diFFraction.国家自然科学基

Structural Analysis of ZrS Films

用热蒸发法和磁控离子射频溅射法制备了znS薄膜,利用X射线衍射技术对所研制的薄膜的结构相特性进行研究,为研制高效的光电材料提供依据.ZnS Thin Films are developed by directed thermal evaporation method and FM sputting method, and XRD technology is used to research the structure phase characteristic of the thin Films

A new method For design of CCD driving circuit

用X射线光电子能谱（XPS）技术，测量了射频磁控溅射法（rfMS）制备的硫化锌薄膜（znS：Er3＋）的表面及内部构态，认为氧吸附形成的表面构态是产生薄膜界面态和界面陷阱能级的主要原因，对研究器件的激发过程有参考意义。Three schemes For previous design of CCD driving circuit are discussed in detail,Followed by analysis of their advantages and disadvantages.A new design method with simple and easy implementation is proposed.A practical design of TCD1200D driving circuit using this method is given as an example.福建省自然科学基

Storing of Transient Signal from a Transient Converter in a Disk of Computer

　TCH-4000S瞬态记录仪,能读取(0.05 μS~0.10 M S)x4096 的瞬间信息, 并保存在寄存器中, 后以不同的速率绘图或经d/A 转换输出,设计并行接口电路,编制软件,把寄存的数据在微机中存盘,为瞬态信息的研究提供捷径.Model TCH-4000s transient converter is able to read a transient signal ( 0.05 μs～0.10 m s)×4096 and further to store the analog events in a sem iconductor digital m em ory.The stored digitaldata are subsequently recorded by an X-Yrecorderorreconverted to analog data foroutputata differentspeed .Aparallelinterface circuithasbeen designed and a softw are has been developed for storing the data in a disk of com puter.It provides conve- nience forthe research oftransientsignal.福建省自然科学基金!(A97006

MICROSTRUCTURE AND LUMINESCENCE IN ZINC SULFIDE THIN FILMS DOPED WITH ERBIUM

【中文摘要】 对硫化锌未灼烧的原粉、灼烧两次的粉料及分舟热蒸发研制的掺铒硫化锌电致发光薄膜器件， 用Ｘ射线衍射（ＸＲＤ）、Ｘ射线光电子能谱（ＸＰＳ）和发光亮度测试技术， 测量硫化锌原粉、粉料、薄膜的表面及内部构态， 获得微晶薄膜构态与发光中心浓度和发光亮度关系的信息． 薄膜多晶的沉积有择优取向的趋势； 对（３１１）、（４００）这些高指数的晶面， 置换需要的能量相对较小， 稀土较容易置换这些晶粒格点上的Ｚｎ２＋ ， 形成稀土发光中心； 高指数的晶面上的晶粒尺寸如增大， 它的发光强度将增强． 【英文摘要】 The surface and internal structure states of commercially available ZnS powder, twice heated powder and the ZnS∶Er 3+ thin film material prepared by evaporating with two boats, are measured by using X ray diffraction(XRD), X ray photoelectron spectroscopy(XPS) and electroluminescence brightness measurement techniques. The information of the relation between the microstructure and the concentration of luminescent centers in the film was obtained. The experimental results show that the deposited polycr...福建省自然科学基

Doping of Zn into InP Induced by YAG Continuous Wave Laser

【中文摘要】 Nd:YAG连续激光辐照在表面蒸有Zn薄膜的n-InP片上,用激光诱导的方法实现Zn在InP中掺杂。形成PN结。用电化学C-V方法和扫描电子显微镜对辐照后的样品进行分析研究,给出激光辐照功率、辐照时间等工艺参数对结深、浓度分布影响.在n-InP片表面得到受主浓度分布均匀、高掺杂（～1019cm-3）、浅结（～1μm）的P-InP。初步分析其掺杂机理是激光诱导下所形成的合金结过程。 【英文摘要】 Nd:YAG continuous laser was used to irradiate the n-InP substrates which wore vapoured Zn film on the samples surface. The doping of Zn into InP was achieved by the method of Nd: YAG continuous laser inducing doping, and the PN junctions were obtained. The samples, which were irradiated, were studied with an Electrochemical C-V profiler and Scanning Electron Microscope (SEM). The relation of performance parameters of PN junctions such as the depth of the junctions, the distribution of the doping concentrati...本工作获得国家自然科学基金高科技探索项目（基金批号69887002);教育部与莫斯科大学合作项目的资