Bis{μ-2-[(dimethyl­amino)­meth­yl]benzene­tellurolato}bis­[chlorido­palladium(II)] dichloro­methane hemisolvate

The asymmetric unit of the title compound, [Pd2(C9H12NTe)2Cl2]·0.5CH2Cl2, contains two half-mol­ecules, each lying on a twofold rotation axis; each mol­ecule is chiral and of the same enanti­omer. This is only possible as the mol­ecule has a hinged cis arrangement about the Pd2+ coordination spheres. For this hinged dimeric structure, the angles between the two coordination planes in each mol­ecule are 21.59 (4) and 22.10 (4)°. This hinged cis arrangement also allows the two mol­ecules to form pairs linked by secondary inter­actions between the Pd and Te atoms of an adjoining mol­ecule, leading to a tetra­meric overall structure. C—H⋯Cl inter­actions consolidate the crystal packing

N,N′-Dibutyl-N,N,N′,N′-tetra­methyl­ethane-1,2-diaminium μ-oxido-bis­[trichloridoferrate(III)]

The asymmetric unit of the title compound, (C14H34N2)[Fe2Cl6O], contains one complete cation, two half-cations and two anions. The two half-cations are completed by crystallographic inversion symmetry. The FeIII atoms adopt fairly regular FeCl3O tetra­hedral geometries, although the bridging Fe—O—Fe bond angles differ significantly in the two anions, which both adopt an eclipsed conformation. In the crystal, the components are linked by C—H⋯Cl and C—H⋯O inter­actions

catena-Poly[[chlorido(methyl phenyl sulfide-κS)mercury(II)]-μ-chlorido]

The title compound, [HgCl2(C7H8S)]n, was isolated from the reaction of MeSPh with HgCl2. The HgII atom has a distorted tetra­hedral geometry and is coordinated by one S atom and three Cl atoms. Two of the Cl atoms act as bridging ligands between the Hg atoms, forming a two-dimensional polymeric structure

Bis(tetra­phenyl­phospho­nium) di-μ-iodido-bis[di­iodido­tellurate(II)]

The structure of the title compound, (C24H20P)2[Te2I6], is composed of discrete PPh4 + cations and centrosymmetric [Te2I6]2− anions. The tellurium(II) atom shows a sligthly distorted square-planar TeI4 geometry and is coordinated to two bridging and two terminal iodine atoms. The planar [Te2I6]2− ions are isolated by the cations and no inter­molecular tellurium–halogen or halogen–halogen inter­actions are present

N,N,N′,N′-Tetra­methyl-N,N′-dipropyl­ethane-1,2-diaminium tetra­chlorido­cobaltate(II)

The crystal structure of the title compound, (C12H30N2)[CoCl4], is composed of discrete (C12H30N2)2+ cations and [CoCl4]2− anions. The asymmetric unit contains a half-cation and a half-anion. The atoms of the cation occupy general positions about an inversion centre, which is located at the midpoint of the central C—C bond. The Co atoms lie on a twofold rotation axis. The slightly distorted tetra­hedral coordination environment around the metal atom consists of two Cl atoms and their symmetry-related pairs

Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η⁵-C₅H₄Se)₂Zr(η⁵-C₅H₅)₂]₂

Transition metal chalcogenide thin films of the type FexZrSe2 have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe2 thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2. Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe0.14ZrSe2 phase, along with secondary phases of FeSe and ZrO2. Upon intercalation, a small optical band gap enhancement (Eg(direct)opt = 1.72 eV) is detected in comparison with that of the host material

Trans-Dichloridobis(triphenylphosphine) palladium(II)

The title compound, [PdCl2{P(C6H5)3}2], has a slightly distorted square-planar geometry, with the chloride ligands coordinated in a trans configuration. The Pd atom is located on a centre of inversion

Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η⁵-C₅H₄Se)₂Ti(η⁵-C₅H₅)₂]₂ (1). Samples were heated at 1000 °C for 1–18 h and cooled to room temperature following two different protocols, which promoted the formation of different phases. The resulting films were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) and UV/vis spectroscopy. An investigation of the Fe doping limit from a parallel pyrolysis study of FeₓTiSe₂ powders produced in situ during LPCVD depositions has shown an increase in the Fe–TiSe₂–Fe layer width with Fe at% increase. Powders were analyzed using powder X-ray diffraction (PXRD) involving Rietveld refinement and XPS. UV/vis measurements of the semiconducting thin films show a shift in band gap with iron doping from 0.1 eV (TiSe₂) to 1.46 eV (Fe₀.₄₆TiSe₂)