Ivo van der Graaff, Assistant Professor of Art & Art History, COLA travels to Italy

As the director of excavations for the Oplontis Project, Professor van der Graaff investigated two structures that were buried by the eruption of Vesuvius in 79 CE

Product introduction by SMEs

In recent years a great deal of research has been carried out on the subject of product introductions. However, there has been little research on product introductions by small and medium sized enterprises (SMEs). Current theory on product introductions might thus not be fully applicable to SMEs. This report therefore aims to answer the question: 'Does the way product introductions are handled by SMEs differ from the way product introductions are described in literature?' �We find that there are indeed differences, though these are mainly differences in level of detail and focus.

Validation Of Naval Platform Electromagnetic Tools Via Model And Full-Scale Measurements

Reliable EMC predictions are very important in the design of a naval platform's topside. Currently, EMC predictions of a Navy ship are verified by scale model and full-scale measurements. In the near future, the validation of software tools leads to an increased confidence in EMC predictions and (hopefully) removes the need for scale model measurements. In general, full-scale verification measurements will remain necessary, although perhaps fewer measurements will be required. The paper presents our topside design experience, from rough estimations 40 years ago, to analytical calculations and model measurements 20 years ago, to the numerically supported process as it is now. It shows the process of validating simulation tools with model and full-scale measurements. It also describes the challenges encountered and the deficiencies of commercial tools used now and the roadmap for Thales Naval Netherlands towards the integrated tools of the future

“The Impact of Housing Market Institutions on Labour Mobility: A European Cross-Country Comparison.” ENEPRI Working Paper No. 54, July 2007

This paper examines the effects of housing market institutions on labour mobility. The authors construct durations for individuals leaving their current job for a different job, becoming unemployed or leaving the labour market, from a sample of households from 14 European countries in 1994-2001. This data are then merged with country-specific housing market institutions, such as transaction taxes, and language and religion diversity. Similar to previous studies, estimated hazards indicate that home-ownership reduces job-to-job mobility as well as the probability to become unemployed or economically inactive on an individual level. However, a comparison between countries reveals that countries with high levels of home-ownership rates also have high levels of unemployment. Therefore, this paper is able to reconcile the seemingly contrasting empirical results from both the macroeconomic and the microeconomic level

China’s rise in a liberal world order in transition – introduction to the FORUM

In a time of great uncertainty about the future and resilience of the liberal world order this Forum focuses on China’s rise and interplay with the foundations of that liberal order. The key question is the extent to and variegated ways in which China - with its (re)ascendance to power and potential global leadership – is adapting to and perhaps even strengthening liberal institutions and rules of the game, confronting them, or developing alternative paths. In this introduction to the Forum we advance three key points based on the contributions. First, contrasting the orthodox binary scenarios of either inevitable conflict or co-optation offered in the mainstream IR debate, the Forum highlights the possibility of a third scenario of China’s interplay with the liberal world and its key actors, institutions, and rules. A hybrid and variegated scenario that entails both conflict and adaptation, differently entangled in different issue areas. Second, it stresses the need to conceptualize and empirically comprise the essentially interlinked nature of domestic state-society models and the global political economy. Third, we argue for a perspective that incorporates underlying economic and social structures and the power relations embedded therein

Layout to circuit extraction for three-dimensional thermal-electrical circuit simulation of device structures

In this paper, a method is proposed for extraction of coupled networks from layout information for simulation of electrothermal device behavior. The networks represent a three-dimensional (3-D) device structure with circuit elements. The electrical and thermal characteristics of this circuit representation are calculated with a circuit simulator. Spatial potential distributions, current flows, and temperature distributions in the device structure are calculated on the spatial coordinates. This simulation method can be placed between device simulation and (conventional) circuit simulation. It has been implemented in a circuit simulator and is demonstrated for simulation of self-heating in a bipolar low frequency power transistor. The main advantage of this simulation method is that not only the 3-D thermal behavior of the whole chip is simulated, but that this is also directly coupled to the electrical device behavior by means of the power dissipation and temperature distribution in the device. This offers the possibility for the circuit designer to simulate 3-D, coupled, thermal-electrical problems with a circuit simulator. As an example, the influence of the emitter contacting on the internal temperature and current distribution of a BJT is investigate

An empirical model for early resistance changes due to electromigration

A new heuristic description for electromigration-induced early resistance changes is given. The basis is formed by two coupled partial differential equations, one for vacancies, and one for imperfections. These equations are solved numerically for a grain boundary bamboo structure. It is shown that this model is capable of simulating the typical effects as observed in early resistance change measurements. These early resistance changes are due to the redistributions of the vacancies and the generation of imperfections. Simulations are performed that closely match the measured resistance change curves

Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7¿m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations(e.g. ¿ID ¿gm etc.)