Roads investment and economic growth : similarity or divergence between developed and developing countries : a thesis presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Planning at Massey University, Manawatū, New Zealand

This research investigates how arguments for economic growth are perceived and advanced to promote road investment. In particular, it addresses the question of whether there is similarity or divergence between developed and developing countries given their different growth trajectories. In literature, the relationship between building roads and achieving economic growth is heavily reliant on quantitative tools while ignoring the socio-economic and political contextual details of developed and developing countries. Using the Aristotelian concept of phronēsis, the research undertakes a comparative case study involving New Zealand and Pakistan. Phronēsis is an intellectual virtue capable of incorporating practical problems and contextual issues in everyday life. The concept was operationalized for this thesis by devolving it into three main questions in which the roads policy direction, the associated processes and discursive pragmatism was explored. Detailed analysis of two major roading infrastructure projects, MacKays to Peka Peka (M2PP) in the Wellington region of New Zealand and a Ring Road in Lahore, Pakistan, shows that roads investment is promoted on the basis of national visions and policies without robust evidence of how economic growth will be achieved. The findings indicate that the national visions, related to case study projects, are not based on robust analyses and research but rather on strategic needs that advance the agenda of the powerful. The research found that the discourse of economic growth in each project was based on similar arguments about travel time saving, efficiency and employment growth regardless of public consultations. The research concludes that ‘economic growth’ is a niche created, advanced, and interpreted by power to achieve its strategic objectives in road development without contextual differences being considered in developed and developing countries

4-[(E)-(5-Chloro-2-hydroxy­benzyl­idene)amino]benzene­sulfonamide

In the mol­ecule of title compound, C13H11ClN2O3S, the aromatic rings are oriented at a dihedral angle of 12.27 (3)°. An intra­molecular O—H⋯N hydrogen bond results in the formation of a planar (mean deviation 0.0083 Å) six-membered ring, which is nearly coplanar with the adjacent ring at a dihedral angle of 2.36 (13)°. In the sulfonamide group, the S atom is 0.457 (3) Å from the plane through the O and N atoms. In the crystal structure, inter­molecular N—H⋯O hydrogen bonds link the mol­ecules

Operation for LHC Cryomagnet Tests: Concerns, Challenges & Successful Collaboration

The LHC construction phase is coming to a close, with installation work progressing rapidly and beam start-up foreseen by end 2007. For the testing of the 1706 LHC cryomagnets in cryogenic conditions and its successful completion by early 2007, considerable challenges had to be overcome since 2002 to assure certain semi-routine tests operation at CERN. In particular, the majority of staff for tests and measurement purposes was provided by India on a rotating, one-year-stay basis, as part of the CERN-India Collaboration for LHC. This was complemented by some CERN accelerator Operation staff. While only 95 dipoles were tested till 2003, the efforts and innovative ideas coming from the Operation team contributed significantly to the completion of tests of nearly all 1706 magnets by end-2006. These included the improvements and management of the tests work flow as well as the test rates. Amongst these, certain pivotal ideas to stream-line the tests methodology as proposed and implemented successfully by the Indian Associates deserve a special mention. An insight into this as well an overall view of the tests operation will be given, together with an indication of some of the operation-related results from the tests programme

Mathematical Educational Games : Perceptions of Special Education Teachers

Children lose 99 times out of hundred in almost every commercial game they play yet they do not stop playing games after such failures (McGonigal 2011). In fact, the more they fail the more they want to play games. The case is different when it comes to computer educational games. Children do not play them as often as these games are meant to be played. Therefore, the perceptions of the teachers who teach through such games are the focus of this study

Reliability Investigations of MOSFETs using RF Small Signal Characterization

Modern technology needs and advancements have introduced various new concepts such as Internet-of-Things, electric automotive, and Artificial intelligence. This implies an increased activity in the electronics domain of analog and high frequency. Silicon devices have emerged as a cost-effective solution for such diverse applications. As these silicon devices are pushed towards higher performance, there is a continuous need to improve fabrication, power efficiency, variability, and reliability. Often, a direct trade-off of higher performance is observed in the reliability of semiconductor devices. The acceleration-based methodologies used for reliability assessment are the adequate time-saving solution for the lifetime's extrapolation but come with uncertainty in accuracy. Thus, the efforts to improve the accuracy of reliability characterization methodologies run in parallel. This study highlights two goals that can be achieved by incorporating high-frequency characterization into the reliability characteristics. The first one is assessing high-frequency performance throughout the device's lifetime to facilitate an accurate description of device/circuit functionality for high-frequency applications. Secondly, to explore the potential of high-frequency characterization as the means of scanning reliability effects within devices. S-parameters served as the high-frequency device's response and mapped onto a small-signal model to analyze different components of a fully depleted silicon-on-insulator MOSFET. The studied devices are subjected to two important DC stress patterns, i.e., Bias temperature instability stress and hot carrier stress. The hot carrier stress, which inherently suffers from the self-heating effect, resulted in the transistor's geometry-dependent magnitudes of hot carrier degradation. It is shown that the incorporation of the thermal resistance model is mandatory for the investigation of hot carrier degradation. The property of direct translation of small-signal parameter degradation to DC parameter degradation is used to develop a new S-parameter based bias temperature instability characterization methodology. The changes in gate-related small-signal capacitances after hot carrier stress reveals a distinct signature due to local change of flat-band voltage. The measured effects of gate-related small-signal capacitances post-stress are validated through transient physics-based simulations in Sentaurus TCAD.:Abstract Symbols Acronyms 1 Introduction 2 Fundamentals 2.1 MOSFETs Scaling Trends and Challenges 2.1.1 Silicon on Insulator Technology 2.1.2 FDSOI Technology 2.2 Reliability of Semiconductor Devices 2.3 RF Reliability 2.4 MOSFET Degradation Mechanisms 2.4.1 Hot Carrier Degradation 2.4.2 Bias Temperature Instability 2.5 Self-heating 3 RF Characterization of fully-depleted Silicon on Insulator devices 3.1 Scattering Parameters 3.2 S-parameters Measurement Flow 3.2.1 Calibration 3.2.2 De-embedding 3.3 Small-Signal Model 3.3.1 Model Parameters Extraction 3.3.2 Transistor Figures of Merit 3.4 Characterization Results 4 Self-heating assessment in Multi-finger Devices 4.1 Self-heating Characterization Methodology 4.1.1 Output Conductance Frequency dependence 4.1.2 Temperature dependence of Drain Current 4.2 Thermal Resistance Behavior 4.2.1 Thermal Resistance Scaling with number of fingers 4.2.2 Thermal Resistance Scaling with finger spacing 4.2.3 Thermal Resistance Scaling with GateWidth 4.2.4 Thermal Resistance Scaling with Gate length 4.3 Thermal Resistance Model 4.4 Design for Thermal Resistance Optimization 5 Bias Temperature Instability Investigation 5.1 Impact of Bias Temperature Instability stress on Device Metrics 5.1.1 Experimental Details 5.1.2 DC Parameters Drift 5.1.3 RF Small-Signal Parameters Drift 5.2 S-parameter based on-the-fly Bias Temperature Instability Characterization Method 5.2.1 Measurement Methodology 5.2.2 Results and Discussion 6 Investigation of Hot-carrier Degradation 6.1 Impact of Hot-carrier stress on Device performance 6.1.1 DC Metrics Degradation 6.1.2 Impact on small-signal Parameters 6.2 Implications of Self-heating on Hot-carrier Degradation in n-MOSFETs 6.2.1 Inclusion of Thermal resistance in Hot-carrier Degradation modeling 6.2.2 Convolution of Bias Temperature Instability component in Hot-carrier Degradation 6.2.3 Effect of Source and Drain Placement in Multi-finger Layout 6.3 Vth turn-around effect in p-MOSFET 7 Deconvolution of Hot-carrier Degradation and Bias Temperature Instability using Scattering parameters 7.1 Small-Signal Parameter Signatures for Hot-carrier Degradation and Bias Temperature Instability 7.2 TCAD Dynamic Simulation of Defects 7.2.1 Fixed Charges 7.2.2 Interface Traps near Gate 7.2.3 Interface Traps near Spacer Region 7.2.4 Combination of Traps 7.2.5 Drain Series Resistance effect 7.2.6 DVth Correction 7.3 Empirical Modeling based deconvolution of Hot-carrier Degradation 8 Conclusion and Recommendations 8.1 General Conclusions 8.2 Recommendations for Future Work A Directly measured S-parameters and extracted Y-parameters B Device Dimensions for Thermal Resistance Modeling C Frequency response of hot-carrier degradation (HCD) D Localization Effect of Interface Traps Bibliograph

Quintessence of faith: A mosque for Khayelitsha

Muhammad sat shivering as he told his wife about the revelation he had received. It was his habit to retreat to the Cave of Hira where he would meditate for days. It was on one of such meditations that the angel Gabriel came to him with Divine Revelation. This was the beginning of many more revelations which would make up the Holy Quran in its entirety. This was the birth of Islam, a religion, a way of life. After years of rejection and persecution in Mecca, God instructed Muhammed (PBUH) and his followers to migrate to Medina. It was in Medina that it was decided to build a place of prayer, and so began the "architecture" of the world's first mosque